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Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
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机译:高相位调制效率的外延层结构InGaAsP / InP脊形波导相位调制器的制备方法
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摘要
A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+InGaAs on the third cladding layer.
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