1.26 μm GaInNAsSb-SQW lasers grown by gas-source MBE

摘要

Long wavelength-GaInNAsSb SQW lasers that include a small amountof Sb were successfully grown by gas-source molecular beam epitaxy(GSMBE). We confirmed that Sb reacts in the highly strained GaInNAs/GaAssystem like a surfactant, which increase the critical thickness at whichthe growth mode changes from the 2-dimensional (2-D) growth to the3-dimensional (3-D) growth. The GaInNAsSb lasers oscillated under CWoperation at 1.258 μm at room temperature. The low CW thresholdcurrent of 12.4 mA and high characteristic temperature (T₀)of 157 K were obtained for GaInNAsSb lasers, which is the best resultfor GaInNAs-based narrow stripe lasers