Multi quantum well (MQW) lasers at 1550 nm fabricated with a singleepitaxial selective growth step by MOVPE without waveguide etching

摘要

MQW lasers have been fabricated by means of a single selectiveepitaxial growth and without waveguide etching. Flat layer interfaceshave been obtained for a wide range of mask widths and mask openingswhile retaining material quality and providing wide bandgap tuning rangethrough the use of QW's. Initial results show good laser performance at1550 nm demonstrating the feasibility of the easy fabrication method forthe realisation of more complex devices by means of active-passiveintegration