Realization of submicron-pitch linear arrays of nanometer-sizedInGaAs ridge quantum wires by selective MBE growth on patterned InPsubstrates

摘要

By optimizing the whole growth process systematically,submicron-pitch linear arrays of nanometer-sized InGaAs ridge quantumwires (QWRs) were successfully realized by selective MBE on patternedInP substrates. Uniformity of QWR arrays was markedly improved byemploying pre-growth etching, native oxide removal by atomic hydrogencleaning, and optimization of V/III ratio. High optical quality of thefabricated submicron-pitch nanometer-sized InGaAs ridge QWR arrays wasconfirmed by achievement of an intense and narrow single PL emissionpeak with a peak width (FWHM) as small as 23 meV. As compared with theprevious 4 μm pitch arrays, the PL peak of the submicron-pitch arraysshowed a large blue shift of more than 100 meV with respect to that froma reference planar QW grown simultaneously