首页> 外文会议>Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On >Internal electric field effects at orderedGa_0.5In_0.5P/GaAs heterointerface investigated byphotoreflectance spectroscopy

【24h】

Internal electric field effects at orderedGa_0.5In_0.5P/GaAs heterointerface investigated byphotoreflectance spectroscopy

机译：有序内部电场效应Ga _{0.5 In _{0.5 P / GaAs异质界面的研究光反射光谱}}

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We performed photoreflectance (PR) and Raman-scatteringmeasurements of long-range orderedGa_0.5In_0.5P/GaAs heterointerfaces to investigateeffects of the internal electric field on the carrier-modulationmechanism. The PR spectrum of an orderedGa_0.5In_0.5P/GaAs heterointerface shows theFranz-Keldysh oscillation due to a strong internal electric field.However, the PR-signal amplitude for the ordered sample is ~1/20 of thatfor a disordered sample. Raman-scattering results of the orderedGa_0.5In_0.5P/GaAs heterointerfaces revealplasmon-phonon coupled modes due to the spontaneous electronaccumulation. We suggest that the electron accumulation reduces the meanelectric field for the PR modulation

机译：我们进行了光反射（PR）和拉曼散射远程有序测量 Ga _{0.5 In _{0.5 P / GaAs异质界面进行研究
内部电场对载流子调制的影响
机制。有序的PR谱
Ga _{0.5 In _{0.5 P / GaAs异质界面显示
由于强大的内部电场，Franz-Keldysh振荡。
但是，有序样本的PR信号幅度约为该值的1/20
对于无序的样本。有序拉曼散射结果
Ga _{0.5 In _{0.5 P / GaAs异质界面揭示
自发电子引起的等离振子-声子耦合模式
积累。我们建议电子积累降低均值
PR调制的电场}}}}}}

著录项

来源
《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On 》||p.330-333|共4页
会议地点
作者
Yamashita K.; Nishida N.; Kakutani T.; Kita T.; Wang Y.; Murase K.; Geng C.; Scholz F.; Schweizer H.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. LOW-TEMPERATURE PHOTOCONDUCTIVITY IN THE p-Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As QUANTUM WELL WITH A NORMAL AND AN INVERTED HETEROINTERFACE [J] . N. B. Brandt, E. V. Bogdanov, A. A. Ilevskii, Moscow University Physics Bulletin . 2006 ,第5期

机译：p-Al0.5Ga0.5As / GaAs / Al0.5Ga0.5As量子阱中具有正态和反相杂原子界面的低温光电导
2. Relaxation of low-temperature negative photoconductivity in p-GaAs/Al0.5Ga0.5As: Be and deep traps near the heterointerface [J] . Minina NY, Bogdanov EV, Ilevskii AA, Physics of the solid state . 2006 ,第11期

机译：p-GaAs / Al0.5Ga0.5As中低温负光电导的弛豫：Be和异质界面附近的深陷阱
3. Electronic Structure of Ordered Ga_(0.5)In_(0.5)P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements [J] . Kenichi YAMASHITA, Kunishige OE: Takashi KITA, Osamu WADA, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005 ,第10期

机译：用拉曼散射和光致发光研究研究有序Ga_（0.5）In_（0.5）P / GaAs异质界面的电子结构
4. Internal electric field effects at ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerface investigated by photoreflectance spectroscopy [C] . Yamashita, K., Nishida, Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On . 2001

机译：通过光反射光谱研究有序Ga / sub 0.5 / In / sub 0.5 / P / GaAs异质界面上的内部电场效应
5. Development of nonspiking ohmic contacts to n-Ga(or Al)(0.5)In(0.5)P and low temperature processed ohmic contacts to n-GaAs via solid phase reactions [D] . Hao, Pinghai 1997

机译：通过固相反应开发与n-Ga（或Al）（0.5）In（0.5）P的不尖峰欧姆接触以及对n-GaAs进行低温处理的欧姆接触
6. Dielectric behaviors of Aurivillius Bi5Ti3Fe0.5Cr0.5O15 multiferroic polycrystals: Determining the intrinsic magnetoelectric responses by impedance spectroscopy [O] . Wei Bai, Chao Chen, Jing Yang, -1

机译：Aurivillius Bi5Ti3Fe0.5Cr0.5O15多铁多晶的介电行为：通过阻抗谱确定本征磁电响应
7. Magnetophotoluminescence study of the Ga0.5In0.5P/GaAs heterointerface with a ordering-induced two-dimensional electron gas [O] . Yamashita Kenichi, Kita Takashi, Matsuura Y., 2002

机译：Ga0.5In0.5P / GaAs异质界面与有序诱导二维电子气的磁光致发光研究

Internal electric field effects at orderedGa0.5In0.5P/GaAs heterointerface investigated byphotoreflectance spectroscopy

摘要

著录项

相似文献

相关主题

期刊订阅

Internal electric field effects at orderedGa_0.5In_0.5P/GaAs heterointerface investigated byphotoreflectance spectroscopy