GaAs/AlGaAs 非对称耦合双量子阱界面混合效应光荧光谱研究

摘要

用分子束外延系统生 长了GaAs/AlGaAs非对称耦合双量子阱(ACDQW),用组合注入的方法,在同一块衬底上获得了不 同注入离子和不同注入剂量的耦合量子阱单元,没有经过快速热退火过程,在常温下测量了不 同单元的显微光荧光谱,发现子带间跃迁能量最大变化范围接近100meV,组合注入所导致的能 量移动要大于单独注入导致的能量移动.%GaAs/AlGaAs asymmetrical coupling double quant um wells (ACDQW) were grown with MBE with the combinative implantation method, and several areas of coupling quantum well with different implantation ion of A s+ and H+ and different ion doses in single wafer were obtained. Without ra pid thermal annealing procedure, maximum difference of transition energy of inte rsubbands of 100meV was found from the photoluminescence spectra measured at roo m temperature. During the implantation process, the energy shift caused by combi native implanation was found to be larger than that caused by ion implantation i ndividually.