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Magneto-optical Kerr effect spectroscopy based study of Landé g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fields

机译:基于磁光克尔效应光谱的低磁场下GaAs / AlGaAs单量子阱中空穴的Landég因子研究

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摘要

Results from a magneto-optical Kerr effect (MOKE) spectroscopy study of ground state heavy-hole and light-hole excitons in GaAs/Al0.3Ga0.7As single quantum wells, with widths ranging from 4.3?nm to 14?nm, are presented. A novel setup and signal analysis procedure was adopted whereby polar MOKE measurements in magnetic fields up to 1.8?T could be performed with a conventional H-frame electromagnet. A first principles simulation based procedure used for simultaneously analyzing both the measured Kerr rotation and Kerr ellipticity spectral lineshapes is described in detail. The Zeeman splitting obtained from the above analysis helped to determine the longitudinal Landé g-factors. The hole g-factors were found to vary with well width, ranging from -0.6 to 1.1 for heavy-holes and 6.5 to 8.6 for light-holes. While the heavy-hole g-factor values are in fair agreement with values expected from k·p perturbation theory, no evidence is found to support theoretical predictions of possible well width dependent giant light-hole g-factors in GaAs/AlxGa1–xAs single quantum wells.
机译:磁光克尔效应(MOKE)光谱研究的结果显示了GaAs / Al 0.3 Ga 0.7 作为单量子阱的基态重空穴和轻空穴激子,展示了宽度范围从4.3?nm至14?nm的图形。采用了一种新颖的设置和信号分析程序,从而可以使用传统的H型电磁铁在高达1.8?T的磁场中进行极性MOKE测量。详细介绍了基于第一原理模拟的过程,该过程用于同时分析测得的Kerr旋转和Kerr椭圆率谱线形。从上述分析中获得的塞曼分裂有助于确定纵向Landég因子。发现孔的g因子随井宽而变化,重孔的g因子在-0.6至1.1之间,轻孔的g因子在6.5至8.6之间。尽管重孔g因子值与k·p扰动理论的预期值基本吻合,但没有证据支持GaAs / Al 中可能依赖于阱宽的巨型轻孔g因子的理论预测。 x Ga 1-x 作为单量子阱。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第21期|1-7|共7页
  • 作者单位

    Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400 005, India|c|;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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