利用超高真空电子束蒸发技术在GaAs(100)上生长Mn/S b多层膜,并经短时间热退火处理分别研究了其退火前后的磁性、磁光克尔效应及相应规律. 退火前Mn/Sb膜在室温下即具有较强的铁磁特性,其易磁化轴在膜面内,样品表面由密集的岛 状铁磁颗粒组成,未能观测到纵向(H∥平面)克尔效应.经350℃、20min退火的样品显示 了最大饱和磁化强度Ms和最小矫顽力Hc,X射线衍射测量表明膜为MnSb单晶并具有均匀的 铁磁特性,能观测到显著的极向和纵向磁光克尔效应,其随磁场变化表现出相应于磁化强度的 磁滞行为.%Mn/Sb multilayer films were grown on (100) GaAs substrate by an ultrahigh vacuum evaporation system and were annealed for a sho rt time. The magnetic and magneto-optical properties were investigated for the samples unannealed and annealed, respectively. All unannealed Mn/Sb multilayer f ilms exhibit strong ferromagnetic properties and the easy magnetization axes are in-plane. The surface of the samples consists of dense islands. The longitudin al (H∥ plane) Kerr effect was not observed for the unannealed samples. All samples annealed at 350℃ for 20min were found to be single phase with nickel ar senide (NiAs) crystal structure and have the largest saturation magnetization Ms and the lowest coercive force Hc. The magnetic force microscope ima ge shows uniform ferromagnetic properties of the film. The longitudinal magneto -optical Kerr effect was observed. The observable Kerr effect hysteresis loop c an be obtained for the annealed Mn/Sb multilayer films on GaAs.
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