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机译:基于磁光克尔效应光谱的低磁场下GaAs / AIGaAs单量子阱中空穴的Lande g因子研究
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research,Mumbai 400 005, India;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India;
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research,Mumbai 400 005, India;
机译:基于磁光克尔效应光谱的低磁场下GaAs / AlGaAs单量子阱中空穴的Landég因子研究
机译:平面或生长方向磁场下,Dresselhaus自旋分裂对GaAs-(Ga,Al)As量子阱中有效Land g因子的影响
机译:平行轴施加磁场作用下圆柱Gaas-(ga,al)量子药盒中的朗德G因子和回旋加速器有效质量
机译:对GaAs-(Ga,Al)作为双量子阱的电子隆起仪的量子限制和磁场效应
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:反射差光谱法观察(001)InGaAs / GaAs单量子阱中的强各向异性禁跃及其在单轴应变下的行为
机译:用相关磁光光谱探测灯孔/重孔切换和单量子点的化学分析