In-Plane Magneto-Photoluminescence Studies of Modulation-Doped GaAs/ AlGaAs Coupled Double Quantum Wells;Applied Physics Letters

摘要

In-plane magnetic field photoluminescence spectra from a series of n-type modulation-doped GaAs/Al0.3Ga0.7As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility samples, the transition energy displays a Nu-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.