首页> 外文会议>Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On >Micro-Raman analysis of molar fraction in polycrystalline InxGa1-x for traveling liquidus zone growth method
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Micro-Raman analysis of molar fraction in polycrystalline InxGa1-x for traveling liquidus zone growth method

机译:多晶In x中摩尔分数的显微拉曼分析 Ga 1-x 用于行进液相区生长方法

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InxGa1-xAs is a tunable lattice matched bulksubstrate material for fabricating InGaAs-based optoelectronic devices.Spatial homogeneity in molar fraction for such substrates is essential.It is planned to grow compositionally homogeneousInxGa1-xAs bulk substrate using InxGa1-xAs polycrystals with graded molar fraction profile as thestarting material in the traveling liquidus zone growth method. Toanalyze these starting materials, particularly the molar fraction,non-destructive techniques are essential. In this paper, we report someresults on micro-Raman studies in these polycrystalline startingmaterials with various values of molar fraction, and a polycrystallineInxGa1-xAs cylindrical sample with graded molarfraction profile. Estimated molar fraction using Raman scattering forvarious polycrystalline samples show good agreements with those examinedby chemical analysis. We further report the effect of surface conditionon our results, using micro-Raman technique
机译:In x Ga 1-x As是可调晶格匹配体 用于制造基于InGaAs的光电器件的衬底材料。 对于这种底物,摩尔分数的空间均匀性是必不可少的。 计划在成分上均匀生长 使用In x Ga的In x Ga 1-x As体衬底 1-x As多晶体,具有渐变的摩尔分数分布作为 液相线生长法中的起始原料。到 分析这些原料,特别是摩尔分数, 非破坏性技术至关重要。在本文中,我们报告了一些 这些多晶起始物的微观拉曼研究的结果 具有不同摩尔分数值的材料,以及多晶 In x Ga 1-x 为带摩尔梯度的圆柱样品 分数分布。使用拉曼散射估算摩尔分数 各种多晶样品与被检样品显示出良好的一致性 通过化学分析。我们进一步报告了表面状况的影响 根据我们的结果,使用微拉曼技术

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