III-IV type component i.e. gallium nitride, integrating method for e.g. LED, involves forming intermediate layer on host zones, suppressing masking and polycrystalline layers, and integrating structures on non host zones

摘要

The method involves placing a masking layer on rectangular mesa shaped host zones that are not arranged to receive a III-IV type component i.e. gallium nitride. The zones are prepared to generate a domain comprising a single type of privileged terrace, in a surface. An aluminum nitride type intermediate layer is formed on the host zones, along a structure made of III-IV material, by a molecular-beam epitaxy to form a qualified mono-crystalline structure. The masking layer and overlying polycrystalline layers are suppressed, and MOS/complementary MOS structures are integrated on non host zones.