Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantumwells with photocurrent and transmission measurement

摘要

Optical interband transitions of p-i-n and modulation-dopedIn_0.53Ga_0.47As/In_0.52Al_0.48As multi-quantum wells structures were clearly observed inphotocurrent and transmission spectra. Steps of the transitionscoincided between both spectra. Effective masses of conduction subbandswere estimated in fitting the transition energies to an effective massequation. The masses of modulation-doped multi-quantum wells agreed withundoped multi-quantum wells in p-i-n junctions. For In normal to thequantum well plane, the effective mass was more than 75% heavier thanthe bulk band edge mass of InGaAs at the top of the quantum wells