Low internal loss InP/InGaAsP laser diodes fabricated usinginductively coupled plasma etching

摘要

Inductively coupled plasma (ICP) etching technique was applied tofabricate high power InP/InGaAsP buried-hetero structure laser diodes.Low internal losses of 6 cm-1 and internal quantumefficiencies of 83%, which resulted in high power of 290 mW output, wereobtained under extremely fast mesa-etching with 1.2 μm/min