Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

摘要

Inductively coupled plasma (ICP) etching technique was applied to fabricate high power InP/InGaAsP buried-hetero structure laser diodes. Low internal losses of 6 cm/sup -1/ and internal quantum efficiencies of 83%, which resulted in high power of 290 mW output, were obtained under extremely fast mesa-etching with 1.2 /spl mu/m/min.