Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

摘要

The effects of etch depth on the sidewall roughness (SWR) of InGaAsP/InP waveguides fabricated utilizing two types of masks, NiCr/SiO_2 and SiO_2 /NiCr/SiO_2, were investigated with an atomic force microscopy. All the waveguides were etched in an inductively coupled plasma-reactive ion etching to depths ranging from 4 to 8 μm. The root-mean-square (rms) sidewall roughness values of the waveguides etched to depths of 4, 6, and 8 μm with SiO_2 remasking layer were measured to be 2.97, 3.45, and 3.64 nm, respectively. Also the rms SWR values of the waveguides etched without the remasking layer were 3.2, 3.65, and 3.89 nm, respectively. The SiO_2 thin remasking layer deposited on NiCr/SiO_2 mask structure reduced the SWR of the waveguides. Measurements indicated that SWR increased with etch time, which is ascribed to an increase in mask erosion during etching.