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Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gassource MBE

机译：气体生长的温度稳定波长TlInGaAs / InP DH LED源MBE

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TlInGaAs/InP double heterostructure (DH) light emitting diodes(LEDs) were grown on (100) InP substrates by gas source molecular beamepitaxy. The Tl composition was 6%. They were operated up to 340 K inthe wavelength range of 1.58 μm. Very small temperature variation inthe electroluminescence (EL) peak energy (-0.09 meV/K) was observed,similar to the temperature variation of photoluminescence (PL) peakenergy

机译：TlInGaAs / InP双异质结构（DH）发光二极管（LED）通过气源分子束在（100）InP衬底上生长外延。 T1组成为6％。它们在340 K 波长范围为1.58μm。温度变化很小观察到电致发光（EL）峰值能量（-0.09 meV / K），类似于光致发光（PL）峰的温度变化活力

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《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On 》||p.105-108|共4页
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Lee H.-J.; Konishi K.; Maeda O.; Mizobata A.; Asami K.; Asahi H.;
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1. MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength [J] . A. Fujiwara, D. Krishnamurthy, T. Matsumoto, Journal of Crystal Growth . 2007 ,第Apr期

机译：TlInGaAs / TlInP / InP SCH LD结构的MBE生长及其激光工作与激光波长的低温变化
2. Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes [J] . Atsushi Fujiwara, Hwi Jae Lee, Akiko Mizobata, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2002 ,第119期

机译：新的TlInGaAs半导体的增长和TlInGaAs / InP DH激光二极管的室温操作
3. Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes [J] . Atsushi Fujiwara, Hwi Jae Lee, Akiko Mizobata, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2002 ,第116期

机译：新的TlInGaAs半导体的增长和TlInGaAs / InP DH激光二极管的室温操作
4. Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE [C] . Lee, H.-J., Konishi, Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On . 2001

机译：气体源MBE生长的温度稳定波长TlInGaAs / InP DH LED
5. The Study of MBE-Grown Type III Superlattices for Very Long Wavelength Infrared nBn Detectors [D] . Man, Peihong. 2021

机译：用于非常长的波长红外NBN探测器的MBE-生长III型超晶格的研究
6. Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C [O] . Mark Hettick, Hao Li, Der-Hsien Lien, 2020

机译：InP在低至220°C的低温下形状受控的InP单晶生长
7. MBE-grown long wavelength InGaAlAs/InP laser diodes [O] . Choi Woo-Young 1994

机译：mBE生长的长波InGaalas / Inp激光二极管

Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gassource MBE

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