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Quantum well intermixing in InGaAsP structures induced by low temperature grown InP
Quantum well intermixing in InGaAsP structures induced by low temperature grown InP
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机译:低温生长的InP诱导的InGaAsP结构中的量子阱混合
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摘要
A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.
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