Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InPgrating

摘要

We grew a strained-InGaAlAs multiple quantum well (MQW) bylow-pressure MOVPE over an InGaAsP grating on InP to fabricate anInGaAlAs-distributed-feedback (DFB) laser diode (LD). InP was overgrownon the grating in PH₃ ambient. We found that temperature,growth rate, and PH₃, partial pressure in the InP overgrowthprocess are the key parameters in growing dislocation-free epitaxiallayers. By adjusting these parameters, we successfully grew adislocation-free strained InGaAlAs MQW over a grating