Effect of strain relaxation layers in high Indium contentmetamorphic InGaAs/InAlAs modulation doped heterostructures

摘要

We have investigated effect of residual strain appeared in thetransport and optical properties of high indium content metamorphic In_0.75Ga_0.25As/In_0.75Al_0.25Asmodulation doped heterostructures grown via (inverse step: IS-) stepgraded buffer (SGB). The effect of residual strain was controlled by ISstructure and a drastic decrease of residual strain (about one third)was observed. We have also observed an improved low temperature (77 K)electron mobility, when the IS buffer was used. We found that theresidual strain is one of the important interface condition whichdetermines the low temperature (77 K) electron mobility