Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates

摘要

Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm~2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates.