Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates

摘要

We have carried out epitaxial lift-off (ELO) of In_(0.57)Ga_(0.43)As/In_(0.56)Al_(0.44)As metamorphic high electron mobility heterostructures and their van der Waals bonding (VWB) on AlN ceramic substrates. Using a metamorphic heterostructure with an AlAs sacrificial layer and an InGaAs graded buffer grown on GaAs(001), thin film Hall-bar devices on AlN ceramic substrates were successfully fabricated by ELO and VWB. The Hall-bar devices exhibit very high electron mobilities, such as 11000 cm~2/(V s) at room temperature (RT) and 84000 cm~2/(V s) at 12K. The RT mobility is the highest ever reported for ELO devices. This is the first report on ELO for metamorphic devices.