Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

摘要

We investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(OOl) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed "normal" and "inverted" VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAs ultrathin films, such as ～10 000 cm~2/V s for ～100 nm thickness and ～7000 cm~2/V s for ～20 nm. These carrier mobilities are highest not only for thin films on flexible substrates but also for InAs thin films; higher than those of InAs films grown on GaAs(111)A and membranes fabricated from them.