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Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor
Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor
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机译:应变InAlAs / InGaAs变质高电子迁移率晶体管的硫化处理方法
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摘要
This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.
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