Thermal stability of GaAs/InAs/GaAs heterostructure studied byX-ray crystal truncation rod scattering measurement

摘要

Distribution of In in GaAs/InAs(1ML)/GaAs structure wasinvestigated by X-ray crystal truncation rod scattering measurement. TheInAs layer and the GaAs cap layer were grown at 480° C on the GaAsbuffer layer grown at 590° C. After the growth, the samples wereannealed at different temperatures, and the thermal stability of theGaAs/InAs/GaAs structure was investigated. In atoms were surelyconfirmed in 1ML when the sample was as grown. However, when the samplewas annealed at 590° C only for 10 min, the In atoms widely spreadedin the GaAs layers. The diffusion coefficient of In in the GaAs layergrown at 480° C was greater than that in the GaAs layer grown at590° C. The difference is considered to be caused by the Ga vacanciesgenerated in the GaAs layer grown at 480° C