Ammonia (NH₃) plasma surface passivation of InP/InGaAsheterojunction bipolar transistors

摘要

In this study, we report on the experimental results of ammonia(NH₃) plasma surface passivation of InP/InGaAs HBT's. The NH₃ plasma treatment is found to reduce the surfacerecombination and thus improve the current gain. The passivationmechanism is believed to be similar to that of H and N plasma treatmentfor GaAs HBT's