首页> 外文OA文献 >Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors

【2h】

Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors

机译：使用InP-GaAsSb-InP双异质结双极晶体管测量磷化铟的电子引发的碰撞电离系数

页面导航

著录项
相似文献
相关主题

著录项

作者
Lam Selena;
展开▼
作者单位

展开▼
年度 2004
总页数
原文格式 PDF
正文语种 English
中图分类

相似文献

外文文献
中文文献
专利

1. E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors [J] . Squartecchia Michele, Johansen Tom K., Dupuy Jean-Yves, Microwave and optical technology letters . 2019,第2期

机译：基于堆叠晶体管的电子带铟磷化铟双异质结双极晶体管单整体微波集成电路功率放大器
2. Thermally stable iridium contacts to highly doped p-In_(0:53)Ga_(0:47)As for indium phosphide double heterojunction bipolar transistors [J] . Brahem M., Mogilatenko A., Stoppel D., Microelectronic Engineering . 2019,第Jula期

机译：热稳定的铱与高掺杂的p-In_（0:53）Ga_（0:47）As接触，用于磷化铟双异质结双极晶体管
3. Thermally stable iridium contacts to highly doped p-In_(0:53)Ga_(0:47)As for indium phosphide double heterojunction bipolar transistors [J] . Brahem M., Mogilatenko A., Stoppel D., Microelectronic Engineering . 2019,第JULa期

机译：热稳定的铱与高掺杂的p-In_（0:53）Ga_（0:47）As接触，用于磷化铟双异质结双极晶体管
4. INDIUM PHOSPHIDE DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS WITH T-SHAPED EMITTER METAL FEATURES HAVING CUTOFF FREQUENCIES IN EXCESS OF 200 GHZ [C] . A.K. Fung, L. Samoska, J. Velebir, Electrochemical Society . 2005

机译：具有T形发射器金属特征的磷化铟双异质结双极晶体管，其截止频率超过200GHz
5. Design, fabrication and characterization of ultra high speed indium phosphide/gallium arsenic antimide/indium phosphide double heterojunction bipolar transistors [D] . Dvorak, Martin William 2002

机译：超高速磷化铟/砷化镓砷/磷化铟双异质结双极晶体管的设计，制造与表征
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) [O] . Geonyeop Lee, Stephen J. Pearton, Fan Ren, 2019

机译：异结双极晶体管：具有高电流扩增的2D基于材料的垂直双相杂交双极晶体管（ADV。电子。Matter。3/2019）
8. Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz [R] . Fung, A. K., Samoska, L., Velebir, J., 2005

机译：具有T形发射极金属特征的磷化铟双异质结双极晶体管具有超过200GHz的截止频率

Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors

著录项

相似文献

相关主题

期刊订阅