Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

摘要

Ammonium sulfide ((NH ) S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH ) S. It was found that a 10% (NH ) S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH ) S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (D ) proved that the growth of native oxide was suppressed.