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International Symposium on the Physical and Failure Analysis of Integrated Circuits
International Symposium on the Physical and Failure Analysis of Integrated Circuits
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1.
An innovative gate oxide characterization technique in the failure analysis of 0.13/spl mu/m process technology based MOSFET device
机译:
基于0.13 / SPL MU / M过程技术的MOSFET装置的失效分析中的创新栅极氧化物表征技术
作者:
How H.C.
;
Ooi K.B.
;
Ng J.C.
;
Khairul Nizam M.
;
Ng H.B.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
MOSFET;
crystal microstructure;
etching;
failure analysis;
fault diagnosis;
semiconductor device breakdown;
semiconductor device reliability;
silicon;
transmission electron microscopy;
0.13 micron;
MOSFET device;
TEM;
constant voltage stress;
failure analysis;
failure;
2.
Transmission EELS attachment for SEM
机译:
SEM传输EELS附件
作者:
Khursheed A.
;
Luo T.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
electron energy loss spectra;
scanning electron microscopes;
transmission electron microscopy;
30 KeV;
EDX;
K edge;
Philips XL30;
SEM;
elemental analysis;
energy resolution;
scanning electron microscopes;
scanning transmission electron microscopes;
structural inform;
3.
The effect of ultrasonic cleaning on the bond wires
机译:
超声波清洗对键合线的影响
作者:
Jiang Yuqi
;
Tang Dong
;
Song Xianzhong
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
cracks;
finite element analysis;
fracture;
lead bonding;
multichip modules;
semiconductor device breakdown;
ultrasonic cleaning;
FEA;
bond wires;
cracks;
decapsulation;
finite element analysis;
fractures;
heel crack;
resonant vibration;
ultrasonic cleaning;
4.
Unencapsulated cross-section method for microelectronic packaged devices
机译:
微电子封装装置的未封装横截面方法
作者:
Liechty G.D.
;
Hirsch E.A.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
cameras;
integrated circuit packaging;
optical images;
optical microscopes;
optical microscopy;
MultiPrep System;
cross-sections preparation;
imaging system;
microelectronic packaged devices;
optical microscope;
surface finishes;
unencapsulated cross-section method;
5.
Novel acoustic techniques for microelectronic failure analysis and characterization
机译:
微电子故障分析和表征的新型声学技术
作者:
Wong W.K.
;
Street A.G.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
accelerometers;
acoustic microscopy;
failure analysis;
gyroscopes;
micromechanical resonators;
microswitches;
MEMS accelerometers;
MEMS gyroscopes;
MEMS resonators;
RF microswitches;
acoustic analysis;
acoustic/phonon characterization;
active electron beam probing;
a;
6.
Characterization of 2D dopant profiles for the design of proton implanted high-voltage super junction
机译:
质子植入高压超接线设计2D掺杂剂轮廓的表征
作者:
Buzzo M.
;
Rub M.
;
Ciappa M.
;
Fichtner W.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
doping profiles;
etching;
power semiconductor devices;
semiconductor junctions;
semiconductor process modelling;
2D dopant profiles;
SJ transistors;
column formation;
donor implantation;
high-voltage super junction;
masking effect;
metallization;
overcompensation ef;
7.
Three dimensional imaging of microelectronic devices using a crossbeam FIB
机译:
使用横梁FIB的微电子器件的三维成像
作者:
Lifshin E.
;
Evertsen J.
;
Principe E.
;
Friel J.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
electron guns;
focused ion beam technology;
integrated circuits;
milling;
scanning electron microscopy;
1 KV;
30 KV;
3D imaging;
5 KV;
Carl Zeiss 1540 crossbeam instrument;
SEM imaging;
Schottky source electron gun;
crossbeam FIB;
ion milling;
microelectronic devices;
8.
Improvement of ageing simulation of electronic circuits based on behavioural modelling
机译:
基于行为建模的电子电路老化模拟改进
作者:
Marc F.
;
Mongellaz B.
;
Bestory C.
;
Levi H.
;
Danto Y.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
ageing;
circuit simulation;
hardware description languages;
integrated circuit reliability;
VHDL-AMS;
ageing simulation;
behavioural modelling language;
electronic circuits;
integrated circuit reliability;
9.
Laser beam induced dielectric cracks in VLSI devices
机译:
激光束诱导VLSI器件中的介电裂缝
作者:
Maury A.
;
Schaller J.
;
Goh Chia Lan
;
Iskandar Idris Yaacob
;
Chua Choon Meng
;
Tan Soon Huat
;
Maznev A.
;
Gomez K.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
VLSI;
Young's modulus;
finite element analysis;
integrated circuit modelling;
laser beam effects;
materials preparation;
optical microscopes;
thermal stress cracking;
SRO deposition conditions;
SRO films;
TIVA analysis;
VLSI devices;
Young modulus;
dielectric crackin;
10.
Automatic target preparation of electronic and microelectronic components with the new TargetSystem
机译:
具有新的目标系统的电子和微电子元件的自动目标准备
作者:
Reiter K.H.
;
Lahn J.
;
Bundgaard H.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
manufacturing systems;
materials preparation;
metallography;
TargetSystem;
automatic target preparation;
electronic components;
microelectronic components;
preparation methods;
11.
Physical analysis of TiSi/sub 2/ bridging (gate-to-S/D) failure in IC
机译:
IC中TISI / sub 2 /桥接(栅极 - S / D)失效的物理分析
作者:
Kuan H.P.
;
Zhang X.M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
focused ion beam technology;
integrated circuit testing;
scanning electron microscopy;
titanium compounds;
transmission electron microscopy;
TiSi/sub 2/;
bridging failure;
chemical de-processing;
focus ion beam;
integrated circuit failure;
mechani;
12.
Methods for searching the cause of crack
机译:
寻找裂缝原因的方法
作者:
Bin Zhang
;
Ning Chen
;
Feizhou Zhang
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
cracks;
elemental semiconductors;
semiconductor device manufacture;
silicon;
Si;
active devices structure;
crack;
die attach;
die bond;
integrated silicon devices manufacture;
moulding process;
residual stresses;
wafer saw;
13.
Investigation and application of SEM dopant contrast on cross-section
机译:
SEM掺杂对比横截面的调查与应用
作者:
Lai Li-Lung
;
Wu Min
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
doping profiles;
failure analysis;
inspection;
scanning electron microscopy;
semiconductor device testing;
specimen preparation;
PFA;
SEM dopant contrast;
dopant profile;
low yield analysis;
physical failure analysis;
product pattern;
semiconductor device;
spatial re;
14.
Study of degradations in PCB interconnections for high frequency applications
机译:
高频应用PCB互连降解研究
作者:
Duchamp G.
;
Verdier F.J.M.
;
Levrier B.
;
Marc F.
;
Ousten Y.
;
Danto Y.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
fault diagnosis;
integrated circuit interconnections;
integrated circuit metallisation;
integrated circuit testing;
printed circuits;
radiofrequency integrated circuits;
FR4 boards;
PCB interconnections degradations;
aging tests;
copper metalliza;
15.
Moire stabilized thermal imaging
机译:
莫尔稳定的热成像
作者:
Colvin J.B.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
fault diagnosis;
flaw detection;
infrared imaging;
integrated circuit testing;
light interferometry;
moire fringes;
IR camera imaging methods;
Moire pattern sensitivity;
backside thermal mapping;
fluorescence microthermal imaging;
local interference pattern shifts;
16.
FIB etching of Cu with minimal impact on neighboring circuitry, including dielectric
机译:
Cu的FIB蚀刻具有对相邻电路的最小影响,包括电介质
作者:
Ng K.
;
Motegi S.
;
Jain R.K.
;
Lundquist T.R.
;
Makarov V.V.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
dielectric materials;
focused ion beam technology;
integrated circuit interconnections;
silicon compounds;
sputter etching;
Cu;
Cu interconnect;
FIB activated chemistry;
FIB etching;
SiO/sub 2/;
dielectric decomposition;
focused ion beam technology;
low-k die;
17.
Trapping and detrapping kinetics in metal gate/HfO/sub 2/ stacks
机译:
金属栅/ HFO / SUB 2 /叠层中的捕获和脱节动力学
作者:
Mitard J.
;
Leroux C.
;
Ghibaudo G.
;
Reimbold G.
;
Garros X.
;
Guillaumot B.
;
Boulanger F.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
dielectric materials;
electric breakdown;
hafnium compounds;
tunnelling;
20 to 500 K;
HfO/sub 2/;
Shockley-Read-Hall mechanism;
detrapping kinetics;
direct tunneling;
metal gate stacks;
trapping kinetics;
18.
Packaging leakage mechanism: investigation of copper sulfide growths
机译:
包装泄漏机理:硫化铜生长的研究
作者:
Chan G.H.G.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
ball grid arrays;
electrical faults;
failure analysis;
plastic packaging;
semiconductor device breakdown;
semiconductor device packaging;
PBGA packages;
copper sulfide growths;
failure analysis;
high temperature process;
leaded packages;
packaging leakage mechanism;
19.
RFCMOS ESD protection and reliability
机译:
RFCMOS ESD保护和可靠性
作者:
Natarajan M.I.
;
Thijs S.
;
Jansen P.
;
Tremouilles D.
;
Jeamsaksiri W.
;
Decoutere S.
;
Linten D.
;
Nakaie T.
;
Sawada M.
;
Hasebe T.
;
Groeseneken G.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
electrostatic discharge;
integrated circuit reliability;
radiofrequency integrated circuits;
5 GHz;
90 nm;
CMOS process technology;
ESD reliability;
RFCMOS ESD protection;
electrostatic discharge;
low noise amplifier;
radiofrequency integr;
20.
A methodology to delimit the on-state safe operating area of GaAs MESFET for non linear applications
机译:
界定GaAs MESFET的ON状态安全操作区域进行非线性应用的方法
作者:
Ismail N.
;
Malbert N.
;
Labat N.
;
Touboul A.
;
Muraro J.L.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
III-V semiconductors;
Schottky gate field effect transistors;
gallium arsenide;
GaAs;
MESFET;
accelerated DC stress;
accelerated RF stress;
high gate-drain voltage;
nonlinear load line;
nonlinear operating condition;
off-state bias condition;
on-state safe operatin;
21.
Thermal stability of SiGe dynamic threshold pMOSFET
机译:
SiGe动态阈值PMOSFET的热稳定性
作者:
Liao W.M.
;
Shih C.F.
;
Li P.W.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
Ge-Si alloys;
MOSFET;
thermal stability;
SiGe;
body factor;
dynamic threshold mode;
low frequency noise;
off-state leakage;
pMOSFET;
strained SiGe;
subthreshold swing;
temperature dependence;
thermal stability;
threshold voltage;
22.
Physical Analysis of TiSi{sub}2 bridging (gate-to-S/D) failure in IC
机译:
IC中TISI {SUB} 2桥接(栅极 - )桥梁的物理分析
作者:
H. P. Kuan
;
X. M. Zhang
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
23.
The application of HAADF-STEM in SiGe materials
机译:
Haadf-step在SiGe材料中的应用
作者:
Du A.Y.
;
Tang L.J.
;
Wang Y.H.
;
Cheng C.K.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
Ge-Si alloys;
materials testing;
scanning-transmission electron microscopy;
transmission electron microscopy;
SiGe;
SiGe materials;
dislocations;
grading layers;
high-angle annular-dark field;
scanning transmission electron microscopy;
24.
Soft secondary electron programming for floating gate NOR flash EEPROMs
机译:
用于浮栅和闪光EEPROM的软二次电子编程
作者:
Kumar P.B.
;
Nair D.R.
;
Mahapatra S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
flash memories;
hot carriers;
logic gates;
CHISEL mechanism;
NOR flash EEPROM;
channel hot electron;
channel initiated secondary electron;
drain disturb;
floating gate EEPROM;
soft secondary electron programming;
25.
Application of breakthrough failure analysis techniques on 90nm devices with an EOS fail
机译:
突破性故障分析技术在EOS失败的90nm器件中的应用
作者:
Bailon M.F.
;
Salinas P.F.
;
Arboleda J.S.
;
Miranda J.C.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
circuit simulation;
failure analysis;
integrated circuit testing;
leakage currents;
nanotechnology;
spectral analysis;
90 nm;
CMOS latch-up;
circuit simulation;
defect finger-printing analysis;
electrical-over-stress failure;
failure analysis;
failure mechanism;
gate;
26.
Gate oxide reliability for nano-scale CMOS
机译:
纳米级CMOS的栅极可靠性
作者:
Stathis J.H.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
integrated circuit reliability;
semiconductor device breakdown;
NBTI;
failure mechanism;
gate oxide reliability;
nano-scale CMOS circuit;
oxide breakdown;
ultra-thin gate oxide;
27.
Identification of some key parameters for photoelectric laser stimulation of IC: an experimental approach
机译:
IC光电激光刺激的一些关键参数的识别:实验方法
作者:
Perdu P.
;
Desplats R.
;
Sanchez K.
;
Beaudoin F.
;
Lewis D.
;
Pouget V.
;
Douin A.
;
Fouillat P.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
OBIC;
integrated circuit testing;
laser beam applications;
p-n junctions;
continuous pulse;
fixed position scan;
integrated circuit;
laser power density;
phenomenological approach;
photoelectric laser stimulation;
ultra short pulse;
variable slow scan;
28.
Ring voids and solder extrusion mechanism for flip chip packaging
机译:
倒装芯片包装的环空隙和焊料挤出机构
作者:
Zhao X.L.
;
Chin J.M.
;
Master R.N.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
curing;
extrusion;
flip-chip devices;
integrated circuit interconnections;
integrated circuit packaging;
solders;
voids (solid);
flip chip packaging;
integrated circuit interconnections;
integrated circuit packaging;
ring voids;
solder bumps;
solder extrusion mechan;
29.
Manufacturing-robotic-induced 'mechanical' damages on semiconductor dies: mechanics, electrostatics or what else ?
机译:
制造机器人诱导的“机械”损坏半导体模具:力学,静电物质或其他内容?
作者:
Jacob P.
;
Nicoletti G.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
assembling;
electrostatic discharge;
failure (mechanical);
failure analysis;
semiconductor device reliability;
ESDFOS;
post wafer-assembly process;
post-assembly test;
robotic-induced mechanical damage;
semiconductor dies;
surface failure mechanisms;
30.
Electromigration-induced copper interconnect degradation and failure: the role of microstructure
机译:
电迁移诱导的铜互连劣化和失败:微观结构的作用
作者:
Zschech E.
;
Meyer M.A.
;
Zienert I.
;
Langer E.
;
Geisler H.
;
Preusse A.
;
Huebler P.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
electromigration;
failure analysis;
grain boundary diffusion;
integrated circuit interconnections;
integrated circuit reliability;
Cu;
copper interconnect;
copper microstructure;
electromigration-induced degradation;
grain boundary diffusion;
in-situ micros;
31.
Evaluation of the strain state in SiGe/Si heterostructures by high resolution x-ray diffraction and convergent beam electron diffraction
机译:
高分辨率X射线衍射和收敛光束电子衍射评价SiGe / Si异质结构中的应变状态
作者:
Suey Li Toh
;
Li K.
;
Ang C.H.
;
Rao R.
;
Er E.
;
Loh K.P.
;
Boothroyd C.B.
;
Chan L.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
Ge-Si alloys;
X-ray diffraction;
electron diffraction;
interface structure;
semiconductor heterojunctions;
silicon;
CBED;
HOLZ reflection;
HRXRD;
SiGe-Si;
SiGe/Si heterostructures;
convergent beam electron diffraction;
graded layer;
high resolution x-ray diffraction;
32.
RC-triggered PNP and NPN simultaneously switched silicon controlled rectifier ESD networks for sub-0.18/spl mu/m technology
机译:
RC触发的PNP和NPN同时切换硅控制整流器ESD网络,用于子0.18 / SPL MU / M技术
作者:
Pee-Ya Tan
;
Indrajit M.
;
Pian-Hong Li
;
Voldman S.H.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
RC circuits;
bipolar transistors;
discriminators;
electrostatic discharge;
thyristors;
trigger circuits;
0.18 micron;
ESD network;
MOSFET dielectric scaling;
NPN bipolar transistor;
PNP bipolar transistor;
RC discriminator network;
SCR-based clamp circuit;
electrosta;
33.
2D junction delineation for the failure analysis of silicon carbide devices
机译:
碳化硅器件故障分析的2D结划分
作者:
Buzzo M.
;
Ciappa M.
;
Fichtner W.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
doping profiles;
failure analysis;
p-n junctions;
scanning electron microscopy;
semiconductor device testing;
silicon compounds;
surface roughness;
wide band gap semiconductors;
2D dopant profile;
2D junction delineation;
SiC;
failure analysis;
junction location;
p/s;
34.
Dynamic SIMS study on failure analysis of multiple E-test failure in wafer fabrication
机译:
晶圆制造中多次电子试验失效失效分析的动态SIMS研究
作者:
Gui D.
;
Hua Y.N.
;
Eng C.S.
;
Ooi S.C.
;
Goh A.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
fault diagnosis;
integrated circuit reliability;
integrated circuit technology;
integrated circuit testing;
scanning electron microscopy;
secondary ion mass spectroscopy;
CAMECA IMS Wf instrument;
EOL electrical test;
failure analysis;
multiple E;
35.
Failure localization in IC packages using time domain reflectometry: technique limitations and possible improvements
机译:
使用时域反射测量仪IC包中的故障本地化:技术限制和可能的改进
作者:
Abessolo-Bidzo D.
;
Poirier P.
;
Descamps P.
;
Domenges B.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
integrated circuit packaging;
integrated circuit reliability;
time-domain reflectometry;
DUT;
IC package;
SCAT;
TDR hardware limitation;
TDR technique;
failure localization;
nondestructive failure analysis;
sequential comparative TDR analysis;
time;
36.
Successful fault isolation of bit line leakage and leakage suppression by ILD optimization in embedded flash memory
机译:
在嵌入式闪存中的ILD优化的成功隔离位线泄漏和泄漏抑制
作者:
Nam Sung Kim
;
Yang Bum Lee
;
Wong Wing Yew
;
Mukhopadhyay M.
;
Eng Keong Ho
;
Kuan H.P.
;
Shukla D.
;
Sang Hyun Han
;
Inn Swee Goh
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
circuit optimisation;
dielectric materials;
embedded systems;
failure analysis;
flash memories;
integrated circuit testing;
integrated circuit yield;
leakage currents;
ILD deposition;
ILD optimization;
bit line leakage;
electrical conducting path;
embedded flash mem;
37.
Study on cobalt salicide on patterned wafers with 0.13/spl mu/m CMOS technology and below
机译:
用0.13 / SPL MU / M CMOS技术及以下研究图案晶圆钴的钴Salicide研究
作者:
Deng Qin
;
Mai Zhihong
;
He Ran
;
Lam Jeffrey
;
Rao Ramesh
;
Li Kun
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
X-ray diffraction;
cobalt compounds;
delamination;
failure analysis;
integrated circuit yield;
isolation technology;
materials testing;
0.11 micron;
0.13 micron;
CMOS technology;
CoSi/sub 2/;
X-ray diffraction;
cobalt salicidation;
cobalt sal;
38.
Application of conductive AFM on the electrical characterization of single-bit marginal failure
机译:
导电AFM在单比特边缘故障的电学特性中的应用
作者:
Bailon M.F.
;
Salinas P.F.
;
Arboleda J.S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
atomic force microscopy;
failure analysis;
fault location;
integrated circuit testing;
test equipment;
c-AFM spectroscopy;
conductive AFM;
current mapping;
electrical characterization;
failure analysis;
fault localization;
in-chamber-pico probing;
marginally failing;
39.
The physical failure analysis (PFA) of I/sub DDQ/ and I/sub DDQ/spl I.bar/delta/ fail in 90nm logic products
机译:
I / SUB DDQ /和I / SEAD I / SECT I.Bar/Delta/在90nm逻辑产品中失败的物理失败分析(PFA)
作者:
Sz-Chian Liou
;
Jung-Hsiang Chuang
;
Lee J.C.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
crystal defects;
failure analysis;
fault diagnosis;
integrated circuit testing;
leakage currents;
logic testing;
nanotechnology;
90 nm;
I-V curves measurement;
contact leakage;
crystal defect;
defect site localization;
emission microscope;
fault detection;
leakage pat;
40.
Use of parallel polishing technique for root cause determination of EOS devices
机译:
使用并行抛光技术进行EOS设备的根本原因确定
作者:
Len W.B.
;
Xue M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
integrated circuit reliability;
integrated circuit testing;
polishing;
EOS burnt mark;
EOS device;
electrical simulation;
electrical-over-stress failures;
parallel polishing technique;
root cause determination;
41.
Failure analysis of lead-free Sn-Ag-Cu solder joints for 316 I/O PBGA package
机译:
316 I / O PBGA包装的无铅Sn-Ag-Cu焊点的失效分析
作者:
Luhua Xu
;
Pang J.H.L.
;
Che Faxing
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
assembling;
ball grid arrays;
copper alloys;
deformation;
failure analysis;
fatigue cracks;
plastic packaging;
silver alloys;
solders;
speckle;
tin alloys;
DISA method;
Micro-DISC;
PBGA assembly;
PBGA package;
SnAgCu;
digital image speckle analysis;
failure analysis;
lead;
42.
How effective are failure analysis methods for the 65nm CMOS technology node?
机译:
65nm CMOS技术节点的故障分析方法有多有效?
作者:
Lamy M.
;
Lorut F.
;
de la Bardonnie M.
;
Ross R.
;
Ly K.
;
Wyon C.
;
Kwakman L.F.T.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
failure analysis;
integrated circuit testing;
nanotechnology;
scanning electron microscopy;
65 nm;
CMOS technology;
SEM imaging;
failure analysis;
fault isolation methods;
high resolution columns;
immersion lenses;
laser stimulation methods;
43.
Characterization of various etching techniques for gate level failure analysis and substrate decoration for advanced Cu/low k technologies
机译:
高级Cu /低K技术浇筑栅极级故障分析和基板装饰的各种蚀刻技术的表征
作者:
Huixian Wu
;
Cargo J.
;
White M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
VLSI;
copper;
dielectric materials;
etching;
failure analysis;
fault diagnosis;
integrated circuit reliability;
integrated circuit technology;
silicon compounds;
Cu;
Cu integration;
VLSI technology;
etching techniques;
failure modes;
gate dielectric integration issues;
44.
FEA simulation on the MCP bottom die cracking issue
机译:
MCP底部模具开裂问题上的FEA仿真
作者:
Jiang Yuqi
;
Shen Liang
;
Wang Mingxiang
;
Song Xianzhong
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
cracks;
failure (mechanical);
finite element analysis;
fracture;
multichip modules;
scanning electron microscopy;
stress effects;
FEA simulation;
MCP;
SEM image;
bottom die;
crack initiation;
mechanical force;
mechanical stress;
multi-chip package;
optical image;
therma;
45.
Room temperature defect localization of hot and cold failures using scanning probe microscopy techniques
机译:
使用扫描探针显微镜技术室温缺损热和冷故障的定位
作者:
Tarun A.B.
;
Conception P.
;
Bailon M.F.
;
Arboleda J.P.
;
Miranda J.
;
Descallar W.
;
So M.S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
SPICE;
atomic force microscopy;
failure analysis;
integrated circuit modelling;
integrated circuit testing;
0 C;
110 C;
90 nm;
CMOS test unit;
I-V curves;
Spice simulation;
cold failures;
conducting atomic force microscopy;
defect localizatio;
46.
Backside deprocessing technique its novel fault isolation application
机译:
背面辅助技术及其新型故障隔离应用
作者:
Teh Tict Eng
;
Hnin Ei Lwin
;
Muthu P.
;
Chin J.M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
integrated circuit testing;
isolation technology;
microprocessor chips;
silicon-on-insulator;
backside deprocessing technique;
defect detection sensitivity;
die level failure analysis;
fail site isolation;
microprocessor fault isolation;
silicon-;
47.
Built-in via module test structure for backend interconnection in-line process monitor
机译:
内置VIA模块测试结构,用于后端互连在线进程监视器
作者:
Li H.Y.
;
Li W.H.
;
Wong L.Y.
;
Hwang N.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
built-in self test;
fault diagnosis;
integrated circuit interconnections;
process monitoring;
Cu;
built-in via module test structure;
defect identification;
frame monitor structure;
in-line process monitoring test structure;
low k interconnection;
module defect mo;
48.
Application of logic mapping in the low voltage functional failure analysis
机译:
逻辑映射在低电压功能故障分析中的应用
作者:
Eng Keong Ho
;
Meng Khuan Lee
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS logic circuits;
failure analysis;
logic testing;
advance CMOS devices;
debug technique;
hard defects isolation;
logic failures;
logic mapping;
low voltage functional failures;
physical failure analysis;
product yield;
very low voltage testing;
49.
Semiconductor PN junction failure at operation near or in the breakdown region of the reverse I-V characteristic
机译:
在反向I-V特性的击穿区域附近或中的操作半导体PN结故障
作者:
Obreja V.V.N.
;
Codreanu C.
;
Poenar D.
;
Buiu O.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
fault diagnosis;
p-n junctions;
semiconductor device breakdown;
breakdown region;
electric breakdown;
failure analysis;
semiconductor PN junction;
50.
Comprehensive analysis of vacancy dynamics due to electromigration
机译:
综合分析电迁移导致的空位动态
作者:
Ceric H.
;
Deshpande V.
;
Hollauer C.
;
Holzer S.
;
Grasser T.
;
Selberherr S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
electromigration;
integrated circuit interconnections;
integrated circuit modelling;
vacancies (crystal);
advanced process technology;
complex interconnect structure;
electromigration analysis;
electromigration failure;
interconnect layout;
vacancy dynamics;
51.
Controlling injected electron and hole profiles for better reliability of split gate SONOS
机译:
控制注入的电子和孔曲线,以更好地可靠性拆分闸门SONOS
作者:
Sridhar K.
;
Bharath Kumar P.
;
Mahapatra S.
;
Murakami E.
;
Kamohara S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
electron traps;
hole traps;
hot carriers;
integrated circuit reliability;
integrated memory circuits;
network analysis;
SONOS memory cell;
channel hot electron;
hot hole profiles;
injected electron controlling;
program gate length;
program gate voltage;
reliability;
52.
Yield challenges in nanotechnology
机译:
纳米技术产生挑战
作者:
Ang K.C.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
integrated circuit testing;
integrated circuit yield;
nanotechnology;
process control;
time to market;
advanced integrated yield systems;
enhanced yield improvement;
failure analysis;
in-line process control;
inspection/electrical testing;
integra;
53.
Interfacial stress characterization for stress-induced voiding in Cu/low-k interconnects
机译:
Cu / Low-K互连中应力诱导的界面应力表征
作者:
Wang R.C.J.
;
Chen L.D.
;
Yen P.C.
;
Lin S.R.
;
Chiu C.C.
;
Wu K.
;
Chang-Liao K.S.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
finite element analysis;
integrated circuit interconnections;
integrated circuit modelling;
integrated circuit reliability;
stress effects;
voids (solid);
BEOL reliability;
Cu;
Cu interconnects;
copper voiding;
finite element analysis;
hydrostatics stress;
in;
54.
Rapid diagnostics of an ASIC IP block using dynamic laser scanning
机译:
使用动态激光扫描快速诊断ASIC IP块的诊断
作者:
Liao J.Y.
;
Xiaoding Chen
;
Marks H.L.
;
Nishizaki C.
;
Woods G.L.
;
Vedagarbha P.
;
Nataraj N.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
application specific integrated circuits;
failure analysis;
fault diagnosis;
integrated circuit testing;
laser beam applications;
photoconductivity;
0.11 micron;
1.06 micron;
1.3 micron;
ASIC IP block;
IP memory;
advanced graphics ASIC;
application specific integrat;
55.
Circuitry analyses by using high quality image acquisition and multi-layer image merge technique
机译:
通过使用高质量的图像采集和多层图像合并技术来分析电路分析
作者:
Yao H.P.
;
Qi Zhong
;
Vic Ku
;
Lo C.K.
;
Wu Y.R.
;
Hsieh Y.F.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
circuit analysis computing;
graphical user interfaces;
image processing;
integrated circuit technology;
merging;
mixed analogue-digital integrated circuits;
GUI;
IC circuitry analysis;
TCL script extension support;
analog/mix-signal IC;
automatic backup/restore;
di;
56.
Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides
机译:
超薄栅极氧化物中硬击穿I-V特性的参数和模拟的提取
作者:
Miranda A.
;
Ortiz-Conde A.
;
Sanchez F.J.G.
;
Farkas E.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
MIS devices;
circuit simulation;
difference equations;
integral equations;
semiconductor device breakdown;
semiconductor device models;
I-V characteristic;
MOS device;
circuit simulation;
current voltage characteristic;
diode-like equation;
gate insulator;
hard brea;
57.
Copper/low-k process characterization for 90nm technology using SEM and TEM imaging
机译:
使用SEM和TEM成像的90nm技术铜/低k工艺表征
作者:
Zimmermann G.
;
Chang W.T.
;
Shih T.I.
;
Fan D.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
dielectric materials;
failure analysis;
materials testing;
scanning electron microscopy;
specimen preparation;
transmission electron microscopy;
90 nm;
CDO material delamination;
Cu;
SEM imaging;
TEM imaging;
artificial lateral shrinkage;
artificial vertical;
58.
Challenges in barrier and seed layers characterization of copper technology IC devices
机译:
铜技术IC器件屏障和种子层障碍和种子层的挑战
作者:
Li K.
;
Er E.
;
Yeow T.
;
Tang D.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
integrated circuit metallisation;
materials preparation;
tantalum;
transmission electron microscopy;
0.13 micron;
90 nm;
Cu;
TEM imaging;
Ta;
barrier characterization;
copper technology IC devices;
integrated circuit metallisation;
sample preparation;
seed lay;
59.
Low cost etchant for Ta-based copper barrier
机译:
基于TA的铜屏障的低成本蚀刻剂
作者:
Gabunas C.B.
;
Abitan F.F.
;
Stierman R.J.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
ammonium compounds;
copper;
diffusion barriers;
hydrogen compounds;
integrated circuit interconnections;
sputter etching;
tantalum;
Ta-based copper barrier;
ammonium hydroxide;
etching parameter;
hydrogen peroxide;
potassium hydroxide;
60.
Stress migration lifetime for Cu interconnects with CoWP-only cap
机译:
用于CU互连的应力迁移寿命与仅用于牛仔帽的CU互连
作者:
Gambino J.
;
Johnson C.
;
Therrien J.
;
Hunt D.
;
Wynne J.
;
Smith S.
;
Mongeon S.
;
Pokrinchak P.
;
Levin T.M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
cobalt compounds;
copper;
electromigration;
integrated circuit interconnections;
integrated circuit reliability;
silicon compounds;
CoWP;
CoWP + SiN cap process;
CoWP removal;
CoWP-only cap;
Cu;
Cu interconnects;
SiN;
etch process;
stress migration lifetime;
strip proc;
61.
A study of defects causing yield loss in copper backend process due to the power shorts
机译:
由于电源短路导致铜后端工艺造成缺陷的研究
作者:
Kamat N.R.
;
Lal M.
;
Oh Chong Khiam
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
chemical mechanical polishing;
chemical vapour deposition;
copper;
electrical faults;
electroplating;
etching;
integrated circuit interconnections;
integrated circuit yield;
chemical mechanical polishing;
chemical vapour deposition;
copper backend process;
copper i;
62.
Failure analysis techniques for Cu-Ni-Sn solder joint separations on mounted PBGA devices
机译:
安装PBGA器件Cu-Ni-Sn焊点分离的故障分析技术
作者:
Chan G.H.G.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
ball grid arrays;
copper alloys;
creep;
failure analysis;
finite element analysis;
nickel alloys;
plastic packaging;
printed circuits;
soldering;
tin alloys;
CuNiSn;
PBGA devices;
PCB mounted device;
failure analysis techniques;
finite elemental analysis;
intermetallic;
63.
A new failure mechanism on analog I/O cell under ND-mode ESD stress in deep-submicron CMOS technology
机译:
深度模亚CMOS技术中ND模式ESD应力下模拟I / O细胞的新故障机制
作者:
Shih-Hung Chen
;
Ming-Dou Ker
;
Che-Hao Chuang
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS analogue integrated circuits;
electrostatic discharge;
failure analysis;
fault diagnosis;
integrated circuit reliability;
protection;
ESD failure mechanism;
ESD stress;
ND mode;
analog I/O cell;
analog pins;
deep-submicron CMOS technology;
discharging path;
pure;
64.
Diagnosis and failure analysis for scan failure
机译:
扫描失败的诊断和故障分析
作者:
Song Z.G.
;
Neo S.P.
;
Tun T.
;
Oh C.K.
;
Lo K.F.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
automatic test software;
boundary scan testing;
failure analysis;
fault diagnosis;
automatic test pattern generation;
failure analysis;
microelectronic devices;
scan failure diagnosis;
software-based diagnosis;
65.
ESD protection structure with embedded high-voltage p-type SCR for automotive vacuum-fluorescent-display (VFD) applications
机译:
具有嵌入式高压P型SCR的ESD保护结构,用于汽车真空荧光灯显示器(VFD)应用
作者:
Ming-Dou Ker
;
Wei-Jen Chang
;
Yang M.
;
Cheng-Chung Chen
;
Mu-Chin Chan
;
Wuu-Trong Shieh
;
Kuo-Lung Yen
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
MOS integrated circuits;
automotive electronics;
display devices;
driver circuits;
electrostatic discharge;
thyristors;
ESD protection;
HBM ESD stress;
PMOS device;
automotive electronics applications;
automotive vacuum-fluorescent-display applications;
electrostat;
66.
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD)
机译:
使用超导单光子检测器(SSPD)的超低压CMOS微处理器的测试
作者:
Stellari F.
;
Song P.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
CMOS integrated circuits;
integrated circuit testing;
low-power electronics;
microprocessor chips;
0.13 micron;
1.2 V;
CMOS testing;
PICA method;
S-25 photo-multiplier tube;
acquisition time reduction;
imaging detector;
microprocessor chip;
optical waveforms;
superco;
67.
Statistical and physical analysis of leakage and breakdown failure mechanisms of Cu/low-k interconnects
机译:
Cu / Low-K互连泄漏和击穿故障机制的统计和物理分析
作者:
Tam Lyn Tan
;
Hui Ping Lim
;
Chee Lip Gan
;
Nam Hwang
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
copper;
dielectric materials;
electric breakdown;
failure analysis;
interconnections;
leakage currents;
materials testing;
reliability;
statistical analysis;
Cu;
breakdown failure mechanisms;
breakdown voltage;
dielectric materials;
electric breakdown;
failure analysi;
68.
A review of near infrared photon emission microscopy and spectroscopy
机译:
近红外光子发射显微镜和光谱的综述
作者:
Phang J.C.H.
;
Chan D.S.H.
;
Tan S.L.
;
Len W.B.
;
Yim K.H.
;
Koh L.S.
;
Chua C.M.
;
Balk L.J.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
MOSFET;
failure analysis;
fault diagnosis;
infrared spectroscopy;
optical microscopy;
p-n junctions;
semiconductor device measurement;
semiconductor device reliability;
MOSFET;
defect characterization technique;
fault diagnosis;
fault localization technique;
microel;
69.
A reliable failure analysis methodology in analyzing the elusive gate-open failures
机译:
在分析难以实现的栅极开放故障时可靠的故障分析方法
作者:
Remo N.C.
;
Fernandez J.C.M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
contact resistance;
delamination;
electronics packaging;
electrostatic discharge;
failure analysis;
integrated circuit bonding;
interface phenomena;
reliability;
destructive chemical decapsulation process;
electrical difficulty;
electrical overstress clouding;
erro;
70.
Study of dielectric-breakdown-induced dopant redistribution based on MOSFET diode I-V measurement
机译:
基于MOSFET二极管I-V测量的介电击穿诱导掺杂剂再分配研究
作者:
Lim W.T.
;
Lo V.L.
;
Pey K.L.
;
Ang D.S.
;
Tung C.H.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
MOSFET;
doping profiles;
interface states;
semiconductor device breakdown;
semiconductor device measurement;
semiconductor doping;
silicon;
silicon compounds;
I-V characteristics;
I-V measurement;
MOSFET diode;
Si-SiO/sub 2/;
dielectric breakdown;
dopant redistributi;
71.
Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications
机译:
蚀刻在RIE中的封装IC样本的表征,通过ICP来检测ICP源进行故障分析应用
作者:
Liao J.Y.
;
Batteate P.M.
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
ball grid arrays;
failure analysis;
integrated circuit packaging;
plasma materials processing;
plasma sources;
sputter etching;
ball grid array package;
device overheating;
dry etch;
endpoint detection;
failure analysis;
hardware configuration;
inductively-coupled p;
72.
Low Cost Etchant for la-Based Copper Barrier
机译:
LA基铜屏障的低成本蚀刻剂
作者:
C. B. Gabunas
;
F. F. Abitan
;
R. J. Stierman
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
73.
Couple passive voltage contrast with scanning probe microscope to identify invisible defect out
机译:
耦合被动电压与扫描探针显微镜对比度,以识别无形的缺陷
作者:
Cha-Ming Shen
;
Jing-Hong Chou
会议名称:
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》
|
2005年
关键词:
failure analysis;
integrated circuit testing;
integrated circuit yield;
scanning probe microscopy;
defect location;
dielectric characterization;
failure analysis;
failure mechanism;
fault model;
gate-oxide integrity;
high-resolution current mapping;
invisible defec;
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