Thermal stability of SiGe dynamic threshold pMOSFET

摘要

In this paper, we have systematically investigated the temperature stability of strained SiGe and bulk Si p-MOSFETs operated in dynamic-threshold (DT) mode and standard mode, respectively in terms of drive current, threshold voltage (V/sub th/), subthreshold swing (SS), body factor (/spl gamma/), off-state leakage, and low frequency noise (LFN). The basic physical mechanisms for the temperature dependence of SiGe DT- and standard-MOSFETs are explained based on experimental observations. The comparison with the bulk Si counterpart devices over the whole temperature range is also reported.