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A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer

机译:没有Si盖层的SiGe沟道pMOSFET的阈值电压模型

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摘要

An analytical model on the threshold voltage of SiGe-channel pMOSFET with high-κ gate dielectric is developed by solving the Pois-son's equation. Energy-band offset induced by SiGe strained layer, short-channel effect and drain-induced barrier lowering effect are taken into account in the model. To evaluate the validity of the model, simulated results are compared with experimental data, and good agreements are obtained. This model can be used for the design of SiGe-channel pMOSFET, thus determining its optimal parameters.
机译:通过求解泊松方程,建立了具有高κ栅介电常数的SiGe沟道pMOSFET的阈值电压分析模型。该模型考虑了SiGe应变层引起的能带偏移,短沟道效应和漏极诱导的势垒降低效应。为了评估模型的有效性,将模拟结果与实验数据进行了比较,并获得了良好的一致性。该模型可用于SiGe沟道pMOSFET的设计,从而确定其最佳参数。

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