Semiconductor PN junction failure at operation near or in the breakdown region of the reverse I-V characteristic

机译：在反向I-V特性的击穿区域附近或中的操作半导体PN结故障

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The aim of the paper is to provide experimental results and analysis relating to the failure mechanism of the junction at operation near or in the breakdown region of electrical characteristic.

机译：本文的目的是提供与电学特性近距离区域的交界处的失效机制有关的实验结果和分析。

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来源
《International Symposium on the Physical and Failure Analysis of Integrated Circuits》|2005年||共5页
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Obreja V.V.N.; Codreanu C.; Poenar D.; Buiu O.;
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原文格式 PDF
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中图分类 TN43-53;
关键词
failure analysis; fault diagnosis; p-n junctions; semiconductor device breakdown; breakdown region; electric breakdown; failure analysis; semiconductor PN junction;

机译：失败分析;故障诊断;P-n结;半导体器件故障;击穿区域;电击;故障分析;半导体PN结;

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专利

1. Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic [J] . V.V.N. Obreja, C. Codreanu, D. Poenar, Microelectronics reliability . 2011,第3期

机译：在电气特性击穿区域中，边缘电流导致半导体PN结工作期间的故障
2. Temperature dependence of electroluminescence and I-V characteristics of ferromagneticon-magnetic semiconductor pn junctions [J] . Arata I., Matsukura F., Ohno H., Physica, E. Low-dimensional systems & nanostructures . 2001,第1a3期

机译：电致发光的温度依赖性和铁磁性/非磁性半导体pn结的I-V特性
3. STUDY OF THE CHARACTERISTICS I-V JUNCTIONS PN CONTAINING SiC [J] . H. BOUCHENAFA, K. GHAFFOUR, S. RACHEDI The African Physical Review . 2008,第2008期

机译：SiC特征IV结PN的研究
4. Semiconductor PN junction failure at operation near or in the breakdown region of the reverse I-V characteristic [C] . Obreja, V.V.N., Codreanu, . 2005

机译：反向I-V特性击穿区域附近或击穿区域中的半导体PN结故障
5. AN ANALYSIS OF THE FREQUENCY DEPENDENCE OF THE CAPACITANCE OF ABRUPT PN JUNCTION SEMICONDUCTOR DEVICES [D] . O'HEARN, WILLIAM FRANCIS, JR. -1

机译：突发PN结半导体器件电容的频率相关性分析。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. BULK AND EDGE (SURFACE) LEAKAGE REVERSE CURRENT IN pn JUNCTIONS FROM COMMERCIAL SEMICONDUCTOR DEVICES [O] . Vasile Obreja, Alexandru Cosmin Obreja, See Profile, 2009

机译：商用半导体器件的pn结中的散射和边缘（表面）泄漏反向电流
8. Fast Risetime Reverse Bias Pulse Failures in SiC Pn Junction Diodes [R] . Neudeck, P. G. , Fazi, C. , Parsons, J. D. 1996

机译：siC pn结二极管中的快速上升时间反向偏置脉冲失效

Semiconductor PN junction failure at operation near or in the breakdown region of the reverse I-V characteristic

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