SEMICONDUCTOR DEVICE FOR OBTAINING HIGH PN JUNCTION DIODE REVERSE BREAKDOWN VOLTAGE

摘要

PURPOSE: A SEMICONDUCTOR DEVICE for obtaining a high PN junction diode reverse breakdown voltage by reducing voltage dependency of a capacitor. CONSTITUTION: A second conductive type first well(2) is formed on a surface of a first conductive type semiconductor substrate(1). A second conductive type second well(3) is formed within the second conductive type first well. A first conductive type first diffusion layer(6,7) is arranged on a surface of the second conductive type second well. A capacitor insulating layer is arranged on the first conductive type first diffusion layer. A field insulating layer(5) is adjacent to the capacitor insulating layer and surrounds the capacitor insulation film. An electrode(8) is formed on the capacitor insulating layer.