Physical analysis of TiSi/sub 2/ bridging (gate-to-S/D) failure in IC

摘要

In this paper, the procedures for reviewing the silicide bridging between the poly-gate and substrate region that encountered in the wafer fabrication are demonstrated. Mechanical parallel lapping, chemical de-processing, passive voltage contrast (PVC) technique using focus ion beam (FIB) or scanning electron microscope (SEM), and transmission electron microscopy (TEM) were employed for the physical analysis.