RC-triggered PNP and NPN simultaneously switched silicon controlled rectifier ESD networks for sub-0.18/spl mu/m technology

摘要

Silicon controlled rectifiers (SCRs) have superior ESD performance and are expected to play a major role in sub-/spl mu/m technologies replacing MOSFET-based ESD networks due to MOSFET dielectric scaling. In this paper, novel polysilicon-bound SCR-based clamp circuit is explored that provide simultaneous triggering of NPN and PNP bipolar transistors by means of RC discriminator network and a triggering circuit stages coupled into the regenerative feedback loop of the SCR. This network demonstrates good ESD performance, low on-resistance, high I/sub t2/ and low holding voltage.