Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

摘要

The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs ) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.