The charge-trapping properties of HfTiON with various Hf/Ti ratios have been studied based on an AI/Al_2O_3/HfTiON/SiO_2/Si structure. The high dielectric constant and high trap density of the HfTiON film induced by Ti incorporation contribute to high performance of the nonvolatile memory device. The memory device with lower Ti content (Hf/Ti = 1/1) exhibits better performance than that with higher Ti content (Hf/Ti = 1/3) in terms of higher program speed (ΔV_(FB) = 4.6 V at +12 V, 100 μs) and better retention property (charge loss of 16.5% after 10~4 s), mainly due to its smaller gate leakage resulting from appropriate Ti incorporation.
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机译：基于Al / Al_2O_3 / HfTiON / SiO_2 / Si结构研究了具有不同Hf / Ti比的HfTiON的电荷俘获性能。通过掺入Ti引起的HfTiON膜的高介电常数和高陷阱密度有助于非易失性存储器件的高性能。 Ti含量较低（Hf / Ti = 1/1）的存储设备在更高编程速度（ΔV_（FB）= 4.6 V at +）方面表现出比具有更高Ti含量（Hf / Ti = 1/3）更好的性能。 12 V，100μs）和更好的保持性能（10〜4 s后的电荷损失为16.5％），主要是由于适当掺入Ti导致栅极漏电流较小。
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