- NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN A MULTY-LAYER CHARGE-TRAPPING REGION

摘要

The present invention relates to scaling charge trap memory devices and articles produced thereby. In one embodiment, the charge trap memory device includes a substrate having a source region, a drain region, and a channel region that electrically connects the source and drain. A tunnel dielectric layer is disposed on the channel region over the substrate, and a multi-layer charge-trapping region is disposed on the tunnel dielectric layer. The multi-layer charge-trapping zone comprises a first deuteration layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuteration layer, and a second nitride layer disposed on the first nitride layer. Includes.