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机译:掺Nb的Ga2O3作为非易失性存储应用的电荷捕获层
Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;
Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China;
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China;
Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;
Nonvolatile memory; Charge trapping; High-k dielectric; Nb-doped Ga2O3;
机译:掺Nb的
机译:掺Nb的Gd_2O_3作为非易失性存储器应用的电荷捕获层
机译:以Dy掺杂的HfO_2作为电荷陷阱层和Al_2O_3作为阻挡层的改进的电荷陷阱非易失性存储器
机译:HfTiON作为非易失性存储器应用中的电荷陷阱层
机译:SONOS非易失性存储设备中的均匀和局部电荷陷阱。
机译:非易失性存储应用中Al2O3-TiAlO-SiO2栅堆叠的电子结构和电荷俘获特性
机译:Nb掺杂的Gd2O3作为电荷俘获层用于非易失性存储器应用