DOTS

摘要： Pancreatic cancer(PC)remains one of the leading causes of cancer-related death in human sowing to missed early and effective diagnosis.The inability to translate research into clinical trials and to target chemotherapy drugs to tumors is a major obstacle in PC treatment.Compared with traditional cancer detection methods,the method combining existing clinical diagnosis and detection systems with nanoscale components using novel nanomaterials shows higher sensitivity and specificity.Nanomaterials can interact with biological systems to efficiently and accurately detect and monitor biological events during diagnosis and treatment.With the advance of experimental and engineering technology,more nanomaterials will begin the transition to clinical trials for their validation.This paper describes a number of nanomaterials used in the diagnosis and treatment of PC.

摘要： A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.

摘要： Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from Ⅲ-Ⅴ compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in Ⅲ-Ⅴ compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.

摘要： Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

摘要： Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However,epitaxial growth ofⅢ–Ⅴmaterials on Si encounters the following three major challenges:high density of threading dislocations,antiphase boundaries and thermal cracks,which significantly degrade the crystal quality and potential device performance.In this review,we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001)substrates byⅢ–Ⅴ/Ⅳhybrid epitaxial growth via(111)-faceted Si hollow structures.Moreover,by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band.High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001)substrates are fabricated and characterized.The above results pave a promising path towards the on-chip lasers for optical interconnect applications.

摘要： In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

摘要： The utilization of UV excitation to verify the terahertz (THz) wave modulation of hexagonal-shaped metamaterial (MM) arrays coated with synthesized photoluminescent, down-shifting ZnO quantum dots (QDs) of two different radius sizes, namely, 3.00 nm (pH 10) and 2.12 nm (pH 12), respectively is reported. In order to characterize the behavior of the MM before and after deployment of the ZnO QDs, THz time domain spectroscopy in transmission mode was employed. Upon exposure to UV excitation, the collected amplitude modulation values were 9.21% for the pH 12 and 4.55% for the pH 10 ZnO QDs, respectively. It is anticipated that the ability to actively tune the performance of otherwise passive structures will promote the proliferation of THz signal modulation devices in the near future.

摘要： Setting: Non-adherence to tuberculosis treatment is a risk factor for multidrug-resistant tuberculosis (MDR-TB). In 2015, 480,000 cases of MDR-TB were notified worldwide, leading to 250,000 deaths. Aim: The quality of the Directly Observed Treatment (DOT) adherence counselling among patients with drug resistant and sensitive was assessed. Methods: A hospital based crossectional analytical study was conducted at the national TB hospital in Windhoek among patients with MDR-TB and drug susceptible TB (DS-TB). The quality of adherence counselling was assessed against the WHO counselling guidelines using an interviewer-administered questionnaire. Quality was measured by completeness, duration and frequency of the adherence counselling sessions or program as well as patient satisfaction and preferences. Quantitative and qualitative data were by descriptive statistics in SPSS v23 and thematic analysis respectively. Results: Of the 50 patients, 60% were male, 76% were aged Conclusions: The quality of DOT adherence counselling among hospitalized TB patients is sub-optimal. There is need for a standard operating procedure and guidelines for effective adherence counselling among TB patients to optimize treatment outcomes.

摘要： To improve childhood Tuberculosis management, the National Tuberculosis Program implemented a package of interventions Hospital DOTS linkages (HDL) in 2015 in 144 tertiary and secondary care hospitals across Pakistan. This included systematic engagement of hospital administration and all specialist doctors, staff training and regular facility-based review meetings. HDL was associated with 35% increase in childhood TB notifications in 2015 (versus 2014) in HDL sites as compared to 16% increase in non-HDL sites. The increase was seen across provinces, age-groups and sexes, but did not correlate with presence of Xpert MTB/RIF??or “screeners” (health workers deployed to screen children for TB).

摘要： Optoelectronic applications require the development of new fluorescent and efficient luminescent materials, free of toxicity, low in cost, and easy to produce. In this way the synthesis of zinc-oxide (ZnO) quantum dots (QDs) has recently received special attention due to their good optical, electrical and chemical properties with low production costs and blue light emission. In this work ZnO QDs were successfully doped with europium in order to obtain a tunable emission luminescence from blue emission of ZnO to red emission of europium as a function of wavelength excitation. Results show an efficient blue to red tuning when the excitation wavelength was changed from 317 nm to 395 nm, respectively. This opens the possibility of having new optical devices to produce different color emission using the same material.

摘要： 本发明公开了Dot‑peen DPM码的识别方法及装置，首先通过极值检测获取图像中的点；其次通过检测出的点的位置进行主方向确认，主方向为二维码边缘L线的两个方向，检测定位主方向上的L线；而后通过迭代透视变换生成采样网络；最后对透视变换后的所有点坐标进行采样及二值化处理。采用本方案，可以有效应对DPM码中的Dot‑peen类型的点，并对金属反光、光照不均匀、噪点复杂等情况的DPM码有很好的解码效果；此外，本方案对Dot‑peen DPM码中存在部分点污损的情况有很好的容忍度，可以精确识别带有污渍的Dot‑peen DPM码。

摘要： 本发明涉及用于癌症诊断和用药判断的分子标志物，还涉及用于检测该分子标志物的引物和试剂盒。所述分子标志物为存在于组蛋白甲基转移酶DOT1L上的一系列病理性突变I232N、Y216C、F243L、N241T、E186A、S225L、R231Q、A1003S、A1003G中的一种或多种，该病理性突变与癌症的发生发展相关，其可以作为诊断、预后和用药判断的肿瘤生物标志物，并且能够作为多种恶性肿瘤的治疗靶点。

摘要： 本发明公开了一种Dot点集码的设计与识别系统，包括：编码装置，用于将输入数据进行编码并添加随机性偏移，获得目标编码信息；生码装置，用于生成定位信息，基于定位信息和编码信息获得点集码图；解码装置，用于对点集码图进行处理，获得原始嵌入信息。本发明提供的Dot点集码具有高隐蔽性、高识别精度和较强纠错能力和保密性能，让企业和检测部门防伪、防窜、溯源的需求拥有更多选择。

摘要： 本发明公开了一种基于超小分子H‑dot纳米载药系统的肺癌诊疗一体化的靶向纳米药物(Gef/H‑dot)及其制备方法，属于靶向纳米药物技术领域，制备方法包括以下步骤：将β‑CD转化为Ald‑CD，将Ald‑CD与EPL结合，形成CDPL，将CDPL与近红外(NIR)荧光基团结合，再琥珀酰化，得到NIR荧光体‑CDPL±，并将其命名为H‑dot，将H‑dot与Gef靶向药物复合，得到Gef/H‑dot；是一种理想的多功能纳米药物，在进行实时NIR荧光图像引导的分期检测、手术干预和病理辅助方面具有无限潜力，还可以定向输送抗肿瘤药物(Gef)，实现高效的靶向治疗，并减少治疗相关不良反应。

摘要： 本申请涉及一种轮胎DOT码在线识别方法及在线识别系统，其属于轮胎DOT码检测技术领域，所述方法应用于在线识别系统中的数据处理终端，在线识别系统还包括工业相机设备，方法包括：接收操作人员输入的当前批次轮胎的输入识别码，并基于当前的日期生成对比识别码；实时接收工业相机设备拍摄当前批次轮胎的识别图像；捕捉目标识别图像中轮胎DOT码，并基于捕捉的结果生成检测识别码；将检测识别码与对比识别码相比较；若检测识别码与对比识别码不相同，则将检测识别码标记为错误识别码，并向操作人员的移动终端发生错误信息。本申请捕捉目标识别图像的检测识别码，接着根据检测识别码判断DOT码是否打印错误，进而达到便于对DOT码进行识别检测的目的。

摘要： 本申请提供一种D‑dot探头低频性能的评估与保证方法，包括：根据待测探头100和传输线的结构建立等效电路模型；将所述等效电路模型输入至电路仿真系统，在系统中调节所述水介质的阻抗值，获得对应的电路仿真数据；分析所述电路仿真数据中的所述高压臂电容C

摘要： 本发明公开了基于Dot Triple‑Attention机制的选择式阅读理解方法及装置、存储介质、电子设备，属于自然语言处理、人工智能领域，本发明要解决的技术问题为如何更高效地利用文章信息来促进问句与选项间的交互以及如何实现三个序列之间的直接交互，从而提高选择式阅读理解系统的预测准确性，采用的技术方案为：①一种基于Dot Triple‑Attention机制的选择式阅读理解方法，包括如下模块：预训练嵌入表示模块、特征过滤模块、DotTriple‑Attention交互模块、特征聚合模块和标签预测模块。②一种基于DotTriple‑Attention机制的选择式阅读理解装置，包括：预训练嵌入表示模块单元、特征过滤模块单元、Dot Triple‑Attention交互模块单元、特征聚合模块单元和标签预测模块单元。

摘要： 本实用新型公开了一种新型贴片式DOT周期牌，包括防粘涂层，所述防粘涂层的下方连接有展示层，且展示层的下方连接有离型保护膜，所述离型保护膜通过展示层与防粘涂层相互连接，所述展示层上开设有刻字凹槽。该新型贴片式DOT周期牌，使用时，直接从离型保护膜上揭下，在线贴在轮胎模具的指定位置即可，更换时，直接将其从轮胎模具上揭除，更换过程耗费时间短，同时该周期牌在轮胎上压印形成的DOT周期号轮廓均匀美观、字体清晰细腻，且无不良品产生。

摘要： 本实用新型涉及汽车轮胎技术领域，尤其为一种汽车轮胎DOT码识别装置，包括操作台，所述所述操作台顶面的左右两侧设置有立柱，所述立柱的外壁滑动套接有升降座，所述立柱的上侧设置有顶板，所述顶板的上侧设置有升降气缸，所述升降座的内侧中间处转动连接有螺纹杆，所述升降座的内侧并且位于螺纹杆的前后两侧设置有导向杆，所述螺纹杆、导向杆的外壁套接有移动座，所述升降座的外侧并且与螺纹杆对应设置有电机，通过设置的电机螺纹杆能够带动移动座左右移动，从而能够带动识别扫描器在汽车轮胎的上方左右移动，设置的识别扫描器能够对汽车轮胎表面进行扫描，并把画面传送给控制器，进而能够实现对汽车轮胎DOT码的自动扫描识别。

摘要： 本发明公开了一种基于偶氮苯基的AIE dots/有机聚合物复合材料及其在制备多级开关可控阻变存储器中的应用。该多复合材料是先通过米尔斯反应合成偶氮苯基AIE dots，然后将偶氮苯基AIE dots和有机聚合物聚(乙烯‑alt‑马来酸酐)复合制得。在室温下，通过控制偶氮苯基AIE dots和有机聚合物的掺杂比例、溶剂的种类，结合限制电流、电压扫描方向的改变等方式，能使其显示出多级开关可控存储性能。本发明制备成本低、操作方法简便，所得复合材料可作为一种新型的多级可控存储材料，在器件制备方面表现出灵活性、低成本、溶液易加工等性能，适应于广泛条件和复杂环境下的存储器件的制备。