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Silicon

Silicon的相关文献在1989年到2022年内共计931篇,主要集中在自动化技术、计算机技术、无线电电子学、电信技术、肿瘤学 等领域,其中期刊论文926篇、专利文献5篇;相关期刊195种,包括电子与电脑、电子产品世界、电子技术应用等; Silicon的相关文献由1015位作者贡献,包括Youssou Traore、Aram A. Sahakyan、Hrant N. Yeritsyan等。

Silicon—发文量

期刊论文>

论文:926 占比:99.46%

专利文献>

论文:5 占比:0.54%

总计:931篇

Silicon—发文趋势图

Silicon

-研究学者

  • Youssou Traore
  • Aram A. Sahakyan
  • Hrant N. Yeritsyan
  • Norair E. Grigoryan
  • Gregoire Sissoko
  • Ibrahima Diatta
  • 张慧娟
  • Grégoire Sissoko
  • Mamadou Lamine Ba
  • Mamadou Wade
  • 期刊论文
  • 专利文献

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    • 摘要: 电力电子领域两家全球技术领先的家族企业将携手成立全新的联合企业SEMIKRON-Danfoss。SEMIKRON-Danfoss将重点投资创新、技术及产能等领域,助力客户实现未来发展计划。该交易须经过多个国家的监管批准,预计最迟于2022年第三季度完成交割。SEMIKRON与Danfoss Silicon Power宣布了一项合并,旨在打造一家专门从事电力电子的联合公司,重点关注功率半导体模块业务。
    • Liqiang Zhang; Chenxi Zhu; Sicheng Yu; Daohan Ge; Haoshen Zhou
    • 摘要: Rechargeable lithium batteries have been widely regarded as a revolutionary technology to store renewable energy sources and extensively researched in the recent several decades.As an indispensable part of lithium batteries,the evolution of anode materials has significantly promoted the development of lithium batteries.However,since conventional lithium batteries with graphite anodes cannot meet the ever-increasing demands in different application scenarios(such as electric vehicles and large-scale power supplies)which require high energy/power density and long cycle life,various improvement strategies and alternative anode materials have been exploited for better electrochemical performance.In this review,we detailedly introduced the characteristics and challenges of four representative anode materials for rechargeable lithium batteries,including graphite,Li_(4)Ti_(5)O_(12),silicon,and lithium metal.And some of the latest advances are summarized,which mainly contain the modification strategies of anode materials and partially involve the optimization of electrode/electrolyte interface.Finally,we make the conclusive comments and perspectives,and draw a development timeline on the four anode materials.This review aims to offer a good primer for newcomers in the lithium battery field and benefit the structure and material design of anodes for advanced rechargeable lithium batteries in the future.
    • Long Zhang; Ming Zhang; Tangnan Chen; Dajian Liu; Shihan Hong; Daoxin Dai
    • 摘要: A compact spectrometer on silicon is proposed and demonstrated with an ultrahigh resolution.It consists of a thermally-tunable ultra-high-Q resonator aiming at ultrahigh resolution and an array of wideband resonators for achieving a broadened working window.The present on-chip spectrometer has a footprint as compact as 0.35 mm^(2),and is realized with standard multi-project-wafer foundry processes.The measurement results show that the on-chip spectrometer has an ultra-high resolution Δλ of 5 pm and a wide working window of 10 nm.The dynamic range defined as the ratio of the working window and the wavelength resolution is as large as 1940,which is the largest for on-chip dispersive spectro-meters to the best of our knowledge.The present high-performance on-chip spectrometer has great potential for high-resolution spectrum measurement in the applications of gas sensing,food monitoring,health analysis,etc.
    • Long Wang; Liang Chen; Weizao Liu; Guoquan Zhang; Shengwei Tang; Hairong Yue; Bin Liang; Dongmei Luo
    • 摘要: An energy-efficient route was adopted to treat titanium-bearing blast furnace slag(TBBFS)in this study.Titanium,aluminum,and magnesium were simultaneously extracted and silicon was separated by low temperature sulfuric acid curing and low concentration sulfuric acid leaching.The process parameters of sulfuric acid curing TBBFS were systematically studied.Under the optimal conditions,the recovery of titanium,aluminum,and magnesium reached 85.96%,81.17%,and 93.82%,respectively.The rapid leaching model was used to limit the dissolution and polymerization of silicon,and the dissolution of silicon was only 3.18%.The mechanism of sulfuric acid curing-leaching was investigated.During the curing process,the reaction occurred rapidly and released heat massively.Under the attack of hydrogen ions,the structure of TBBFS was destroyed,silicate was depolymerized to form filterable silica,and titanium,magnesium,aluminum,and calcium ions were replaced to form sulfates and enriched on the surface of silica particles.Titanium,aluminum,and magnesium were recovered in the leaching solution,and calcium sulfate and silica were enriched in the residue after leaching.This method could effectively avoid the formation of silica sol during the leaching process and accelerate the solid-liquid separation.
    • 摘要: 本次更新添加了尼康RAW文件解码支持,为索尼IMF渲染设置增加了一个容易选择的新预设,通过这种方式可以更快地选择和渲染工作。Fusion方面,更好的3D渲染处理意味着当用户使用搭载M1 Max处理器的Apple Mac型号工作时,将不会超出可用内存。在Apple Silicon型号上使用HDR控制使影像调色时的稳定性也得到了提升。
    • 芦潇静
    • 摘要: Silicon Labs(芯科科技)一直致力于以安全、智能无线技术打造更加互联的世界。近日,在一年一度的Works With开发者大会的开幕主题演讲中,Silicon Labs推出一系列新产品和新技术,进一步扩展其以多协议支持、互操作性驱动及稳健安全而著称的产品系列,同时推动Matter、Amazon Sidewalk、Wi SUN和Wi Fi 6等物联网新技术的创新,引领物联网未来发展趋势。
    • Zhouyu Tong; Mingxuan Bu; Yiqiang Zhang; Deren Yang; Xiaodong Pi
    • 摘要: Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.
    • Xiangrui Meng; Changchun Chai; Fuxing Li; Yi Sun; Yintang Yang
    • 摘要: The high-power microwave(HPM)effect heats solar cells,which is an important component of a satellite.This creates a serious reliability problem and affects the normal operation of a satellite.In this paper,the different HPM response characteristics of two kinds of solar cells are comparatively researched by simulation.The results show that there are similarities and differences in hot spot distribution and damage mechanisms between both kinds of solar cell,which are related to the amplitude of HPM.In addition,the duty cycle of repetition frequency contributes more to the temperature accumulation of the solar cells than the carrier frequency.These results will help future research of damage assessment technology,reliability enhancement and the selection of materials for solar cells.
    • 摘要: Silicon Labs推出全新2.4 GHz无线PCB模块Silicon Labs(亦称“芯科科技”)推出全新的BGM240P和MGM240P PCB模块。该模块设计旨在为面向智能家居和工业应用的互联产品提供更快的上市速度;同时,作为BG24和MG24系列无线SoC的扩展产品,这些全新模块可支持开发人员获得可靠的无线性能、能耗效率并保护设备免受网络攻击。全新的BGM240P和MGM240P PCB模块的设计宗旨是提供业界领先的射频性能、低功耗并获得广泛的监管认证,因此开发人员可以更快地将设备推向市场。这些经过认证的模块专为没有丰富射频经验的开发人员设计,提供了许多与其SoC同类产品相同的优势,包括具有1.5 MB闪存和256 KB RAM的Cortex M33处理器,以及PSA 3级安全认证。
    • Daniel Blaschke; Lars Rebohle; Ilona Skorupa; Heidemarie Schmidt
    • 摘要: The immobilization of biomaterials on a carrier is the first step for many different applications in life science and medicine. The usage of surface-near electrostatic forces is one possible approach to guide the charged biomaterials to a specific location on the carrier. In this study, we investigate the effect of intrinsic defects on the surface potential of silicon carriers in the dark and under illumination by means of Kelvin probe force microscopy. The intrinsic defects were introduced into the carrier by local, stripe-patterned ion implantation of silicon ions with a fluence of 3 × 1013 Si ions/cm2 and 3 × 1015 Si ions/cm2 into a p-type silicon wafer with a dopant concentration of 9 × 1015 B/cm3. The patterned implantation allows a direct comparison between the surface potential of the silicon host against the surface potential of implanted stripes. The depth of the implanted silicon ions in the target and the concentration of displaced silicon atoms was simulated using the Stopping and Range of Ions in Matter (SRIM) software. The low fluence implantation shows a negligible effect on the measured Kelvin bias in the dark, whereas the large fluence implantation leads to an increased Kelvin bias, i.e. to a smaller surface work function according to the contact potential difference model. Illumination causes a reduced surface band bending and surface potential in the non-implanted regions. The change of the Kelvin bias in the implanted regions under illumination provides insight into the mobility and lifetime of photo-generated electron-hole pairs. Finally, the effect of annealing on the intrinsic defect density is discussed and compared with atomic force microscopy measurements on the 2nd harmonic. In addition, by using the Baumgart, Helm, Schmidt interpretation of the measured Kelvin bias, the dopant concentration after implantation is estimated.
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