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IEEE Radio Frequency Integrated Circuits Symposium
IEEE Radio Frequency Integrated Circuits Symposium
召开年:
2015
召开地:
Phoenix, AZ(US)
出版时间:
-
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1.
Plenary speaker 1: From THz imaging to millimeter-wave stimulation of neurons: Is there a killer application for high frequency RF in the medical community?
机译:
全体发言人1:从太赫兹成像到神经元的毫米波刺激:高频射频在医学界是否有杀手级应用?
作者:
Siegel Peter H.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Biomedical imaging;
Blood;
Millimeter wave technology;
Monitoring;
Neurons;
2.
Plenary speaker 2: RF as the differentiator
机译:
全体会议发言人2:以射频作为区分因素
作者:
Eul Hermann
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Business;
Explosions;
Industries;
Mobile communication;
Mobile handsets;
Radio frequency;
Wireless communication;
3.
Abstracts cards
机译:
摘要卡
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
4.
A robust low phase noise K
u
band VCO with 23.3 tuning range for E-band and V-band backhaul transceivers
机译:
适用于E波段和V波段回程收发器的强大的低相位噪声K
u inf> VCO,调谐范围为23.3%
作者:
Levinger Run
;
Katz Oded
;
Vovnoboy Jakob
;
Ben-Yishay Roee
;
Carmon Roi
;
Shienman Benny
;
Mazor Nadav
;
Elad Danny
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
MMIC oscillators;
integrated circuit noise;
phase noise;
radio transceivers;
voltage-controlled oscillators;
E-band backhaul transceivers;
IBM silicon-germanium BiCMOS8hp technology;
K band G-boosted Colpitts VCO design;
V-band backhaul transceivers;
frequency 15.2 GHz to 19.2 GHz;
frequency drift;
power 51.4 mW;
power consumption;
robust low-phase noise K band VCO;
size 0.13 mum;
temperature 25 degC;
temperature variation;
Frequency measurement;
Phase noise;
Robustness;
Temperature measurement;
Transceivers;
Tuning;
Voltage-controlled oscillators;
Colpitts;
E-band;
Kinfu/inf band;
PMOS;
SiGe;
low phase noise;
voltage controlled oscillator (VCO);
5.
A low-power 40 Gb/s optical receiver in silicon
机译:
硅中的低功耗40 Gb / s光接收器
作者:
Zhe Xuan
;
Ran Ding
;
Yang Liu
;
Baehr-Jones Tom
;
Hochberg Michael
;
Aflatouni Firooz
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Ge-Si alloys;
elemental semiconductors;
low-power electronics;
operational amplifiers;
optical receivers;
photodiodes;
silicon;
3-stage Cherry-Hooper limiting amplifier;
SiGe;
bit rate 40 Gbit/s;
broadband photodiode;
current 120 muA;
electronic chip;
germanium-on-SOI process;
input photocurrents;
low-noise transimpedance amplifier front-end;
low-power optical receiver;
offset cancellation network;
output driver;
output eye diagram;
power 77 mW;
silicon;
silicon-germanium BiCMOS process;
single-ended opening;
size 0.13 mum;
size 0.18 mum;
voltage 100 mV;
Bandwidth;
BiCMOS integrated circuits;
Optical device fabrication;
Optical receivers;
Photodiodes;
Silicon germanium;
BiCMOS integrated circuits;
broadband amplifiers;
low-noise optical receivers;
6.
A passive-mixer-first receiver with LO leakage suppression, 2.6dB NF, >15dBm wide-band IIP3, 66dB IRR supporting non-contiguous carrier aggregation
机译:
无源混频器优先接收器,具有LO泄漏抑制,2.6dB NF,> 15dBm宽带IIP3、66dB IRR,支持非连续载波聚合
作者:
Wu Charles
;
Yanjie Wang
;
Nikolic Borivoje
;
Hull Christopher
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
digital-analogue conversion;
impedance matching;
low noise amplifiers;
mixers (circuits);
passive networks;
receivers;
AC-boosting compensation amplifier;
CMOS;
DAC;
IRR supporting noncontiguous carrier aggregation;
LNA;
LO harmonics suppression;
LO leakage suppression;
LTE;
bandwidth 50 MHz;
baseband bandwidth;
complementary metal oxide semiconductor;
digital-analog conversion;
image rejection;
low noise amplifier;
noise figure 2.6 dB;
passive-mixer-first receiver;
power 60 mW;
size 28 nm;
wide-band tuneable impedance match;
wideband IIP3;
word length 5 bit;
Baseband;
Calibration;
Harmonic analysis;
Mixers;
Noise figure;
Receivers;
LTE;
carrier aggregation;
image rejection;
passive mixer;
receivers;
7.
A low-power FSK/OOK transmitter for 915 MHz ISM band
机译:
用于915 MHz ISM频段的低功率FSK / OOK发射机
作者:
Jahan M. Shahriar
;
Langford Jeremy
;
Holleman Jeremy
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
UHF frequency convertors;
UHF integrated circuits;
UHF oscillators;
amplitude shift keying;
frequency dividers;
frequency shift keying;
low-power electronics;
phase locked loops;
radio transmitters;
voltage-controlled oscillators;
CMOS process;
ISM band;
PLL-based low-power FSK-OOK transmitter;
frequency 915 MHz;
gain-boosted LC VCO;
hybrid injection-locked divider topology;
phase noise;
power 314 muW;
power 367 muW;
power consumption;
size 130 nm;
voltage 1.2 V;
Frequency shift keying;
Phase locked loops;
Phase noise;
Power demand;
Transmitters;
Voltage-controlled oscillators;
915 MHz;
FSK;
ISM;
OOK;
gain-boosted;
injection-locked;
low-power;
transmitter;
8.
A low-voltage low-power 25 Gb/s clock and data recovery with equalizer in 65 nm CMOS
机译:
低压低功耗25 Gb / s时钟和具有均衡器的65 nm CMOS数据恢复
作者:
Shita Guo
;
Tianwei Liu
;
Tao Zhang
;
Tianzuo Xi
;
Guoying Wu
;
Ping Gui
;
Yanli Fan
;
Maung Win
;
Morgan Mark
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS digital integrated circuits;
LC circuits;
circuit feedback;
clock and data recovery circuits;
equalisers;
error statistics;
low-power electronics;
phase noise;
voltage-controlled oscillators;
BER;
CDR circuit;
CMOS;
FBB technique;
LC-tank VCO;
bit error rate;
bit rate 25 Gbit/s;
clock jitter;
complementary metal oxide semiconductor;
equalizer;
forward-body biasing technique;
frequency 25 GHz;
low-voltage low-power clock and data recovery circuit;
phase noise performance;
power 48.8 mW;
power consumption;
size 65 nm;
threshold voltage;
two-tank transformer-feedback technique;
voltage 0.6 V;
voltage controlled oscillator;
CMOS integrated circuits;
Clocks;
Equalizers;
Jitter;
Logic gates;
Transistors;
Voltage-controlled oscillators;
Clock and data recovery (CDR);
equalizer;
forward-body bias;
jitter;
phase noise;
transformer-feedback;
9.
A highly integrated multiband LTE SiGe power amplifier for envelope tracking
机译:
高度集成的多频带LTE SiGe功率放大器,用于包络跟踪
作者:
Yan Li
;
Ortiz Jeffery
;
Spears Eddie
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Long Term Evolution;
germanium compounds;
radiofrequency power amplifiers;
silicon compounds;
APT;
ET;
LTE QPSK;
SiGe;
average power tracking;
envelope tracking;
frequency 10 MHz;
frequency 1710 MHz to 1980 MHz;
frequency 699 MHz to 716 MHz;
frequency 824 MHz to 915 MHz;
harmonic loadings;
multiband long-term evolution;
power amplifier;
Gain;
Harmonic analysis;
Linearity;
Modulation;
Power amplifiers;
Silicon germanium;
Switches;
SiGe;
average power tracking (APT);
envelope tracking (ET);
long-term evolution (LTE);
multimode multiband (MMMB);
power amplifier (PA);
supply modulator;
10.
A +2.3dBm 124–158GHz Class-C frequency quadrupler with folded-transformer based multi-phase driving
机译:
+ 2.3dBm 124–158GHz C类四频器,具有基于折叠变压器的多相驱动
作者:
Taiyun Chi
;
Papapolymerou John
;
Hua Wang
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
elemental semiconductors;
frequency multipliers;
harmonic generation;
millimetre wave integrated circuits;
passive networks;
signal generators;
silicon;
silicon-on-insulator;
transformers;
1st-stage frequency doubler;
2nd harmonic frequency;
4th harmonic output generation;
CMOS SOI process;
D-band frequency quadrupler;
Si;
broadband differential quadrature driving signal;
class-C frequency quadrupler;
efficiency 5.3 percent;
folded-transformer;
four-phase signal;
frequency 124 GHz to 158 GHz;
frequency 35 GHz;
frequency 70 GHz;
multiphase driving;
passive network;
push-push frequency doubler;
size 32 nm;
Frequency measurement;
Harmonic analysis;
Impedance matching;
Ports (Computers);
Power amplifiers;
Power generation;
Silicon germanium;
CMOS;
D-band;
folded-transformer;
frequency quadrupler;
multi-phase;
11.
A highly integrated single chip 5–6 GHz front-end IC based on SiGe BiCMOS that enhances 802.11ac WLAN radio front-end designs
机译:
基于SiGe BiCMOS的高度集成的5-6 GHz单芯片前端IC,可增强802.11ac WLAN无线电前端设计
作者:
Huang Chun-Wen Paul
;
Christainsen Kenny
;
Nabokin Sergey
;
Mirzayantz Rafik
;
Allum Justin
;
Chen Andrew
;
Lam Lui
;
McPartlin Mike
;
Doherty Mark
;
Vaillancourt Bill
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
detector circuits;
integrated circuit design;
microwave integrated circuits;
1024-QAM application;
802.11ac WLAN radio front-end design;
BiCMOS technology;
FEIC;
SiGe;
frequency 4.9 GHz to 5.9 GHz;
frequency 5 GHz to 6 GHz;
gain -40 dB;
gain 10 dB;
gain 15 dB;
integrated log detector;
integrated single chip front-end IC;
power control;
ultralow back-off DEVM;
voltage 3.3 V;
Bandwidth;
Dual band;
Gain;
Linearity;
Silicon germanium;
Switches;
Wireless LAN;
LNA designs;
PA design;
T/R switch designs;
WLAN 802.11ac front-end ICs;
WLAN front-end module;
12.
A vertical solenoid inductor for noise coupling minimization in 3D-IC
机译:
垂直螺线管电感器,用于最小化3D-IC中的噪声耦合
作者:
Yahalom Gilad
;
Wang Alice
;
Uming Ko
;
Chandrakasan Anantha
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
clocks;
inductors;
integrated circuit noise;
minimisation;
phase noise;
solenoids;
three-dimensional integrated circuits;
voltage-controlled oscillators;
3D-IC;
LC voltage-controlled oscillator;
TSV;
VCO;
gain 14 dB;
improved noise mitigation;
integrated solenoid inductor;
noise coupling minimization;
noise figure 6 dB;
planar two-turn inductor;
size 28 nm;
stacked CMOS technology;
three dimensional integrated circuit;
through silicon vias;
vertical integrated solenoid inductor;
Clocks;
Couplings;
Frequency measurement;
Inductors;
Phase noise;
Solenoids;
Voltage-controlled oscillators;
electromagnetic coupling;
inductors;
phase noise;
radiofrequency integrated circuits;
three-dimensional integrated circuits;
voltage-controlled oscillators;
13.
A positive feedback passive mixer-first receiver front-end
机译:
正反馈无源混频器优先接收器前端
作者:
Nejdel Anders
;
Abdulaziz Mohammed
;
Tormanen Markus
;
Sjoland Henrik
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
radiofrequency integrated circuits;
analog integrated circuits;
current mode circuits;
direct conversion receiver;
frequency 0.7 GHz to 3.8 GHz;
positive feedback passive mixer-first receiver front-end;
quadrature front-end prototype;
radiofrequency integrated circuits;
Baseband;
Frequency measurement;
Impedance;
Impedance matching;
Linearity;
Mixers;
Receivers;
Analog integrated circuits;
Current mode circuits;
Feedback circuits;
Mixers;
Radio Frequency integrated circuits;
14.
A Rel-12 2G/3G/LTE-advanced 2CC transmitter
机译:
Rel-12 2G / 3G / LTE先进的2CC发送器
作者:
Mohammadi B.
;
Kahrizi M.
;
Leete J.
;
Pregardier B.
;
Zhou S.
;
Chiu J.
;
Saeidi B.
;
Chang Y.
;
Nariman M.
;
Mirzaei A.
;
Hadji-Abdolhamid A.
;
Nourani B.
;
Rozenblit D.
;
Aggarwal V.
;
Eslami H.
;
Vakilian N.
;
Mudge P.
;
Zhou Z.
;
Guan C.
;
Liu N.
;
Juan K.
;
Mehrabani A. Tarighat
;
Magoon R.
;
Rofougaran M.
;
Rofougaran R.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
Long Term Evolution;
radio transmitters;
2CC transmitter;
CMOS transmitter;
Rel-12 2G/3G/LTE;
TX LTE;
cellular transceiver;
cellular transmit bands;
single channel;
Baseband;
Phase locked loops;
Radio frequency;
Radio transmitters;
Semiconductor device measurement;
Uplink;
Carrier aggregation;
LTE;
LTE-advanced;
cellular;
mixer;
mobile;
transmitters;
up-conversion;
15.
A Rel-12 2G/3G/LTE-advanced 3CC receiver
机译:
Rel-12 2G / 3G / LTE先进的3CC接收器
作者:
Mikhemar M.
;
Kahrizi M.
;
Leete J.
;
Pregardier B.
;
Vakilian N.
;
Hadji-Abdolhamid A.
;
Vadipour M.
;
Ye P.
;
Chiu J.
;
Saeidi B.
;
Theodoratos G.
;
Nariman M.
;
Chang Y.
;
Etemadi F.
;
Nourani B.
;
Tarighat A.
;
Mudge P.
;
Zhou Z.
;
Liu N.
;
Guan C.
;
Juan K.
;
Zhao B.
;
Magoon R.
;
Rofougaran M.
;
Rofougaran R.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
3G mobile communication;
4G mobile communication;
CMOS integrated circuits;
Long Term Evolution;
cellular radio;
low noise amplifiers;
radio receivers;
2G advanced 3CC receiver;
3G advanced 3CC receiver;
CMOS receiver;
DCXO;
EDGE Rel-9;
GSM;
HSPA+ Rel-11;
LTE-advanced 3CC receiver;
LTE-advanced Rel-12 Cat6;
PLL;
RF LNA port;
TD-SCDMA Rel-9;
bandwidth 60 MHz;
bit rate 300 Mbit/s;
cellular receiver;
current 13.7 mA;
current 17.6 mA;
frequency 572 MHz to 2700 MHz;
size 40 nm;
Bandwidth;
Capacitors;
Mixers;
Phase locked loops;
Radio frequency;
Receivers;
Signal to noise ratio;
Carrier aggregation;
LTE;
LTE-advanced;
RF multiplexing;
cellular;
direct conversion;
mixer;
mobile;
passive;
receiver;
16.
A 10 GHz delay line frequency discriminator and PD/CP based CMOS phase noise measurement circuit with −138.6 dBc/Hz sensitivity at 1 MHz offset
机译:
10 GHz延迟线鉴频器和基于PD / CP的CMOS相位噪声测量电路,在1 MHz偏移下的灵敏度为-138.6 dBc / Hz
作者:
Shilei Hao
;
Tongning Hu
;
Gu Qun Jane
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
charge pump circuits;
delay lines;
delay lock loops;
integrated circuit noise;
phase detectors;
phase noise;
surface acoustic wave filters;
CMOS technology;
DC offset cancellation circuit;
DLL design;
PD-CP-based CMOS phase noise measurement circuit;
PNM circuit;
PNM self-calibration;
bandwidth 200 MHz;
charge pump;
circuit mismatch;
delay line frequency discriminator;
delay-locked loop design;
frequency 10 GHz;
off-chip SAW filter bandwidth;
phase detector;
phase noise detection;
phase noise measurement bandwidth;
phase noise sensitivity;
power 15.2 mW;
proof-of-concept design;
single-tone sensitivity;
size 65 nm;
Delay lines;
Frequency measurement;
Frequency modulation;
Noise measurement;
Phase measurement;
Phase noise;
Sensitivity;
Delay line (DL);
charge pump (CP);
frequency discriminator (FD);
phase detector (PD);
phase noise measurement (PNM);
17.
A 60 GHz 25 tuning range frequency generator with implicit divider based on third harmonic extraction with 182 dBc/Hz FoM
机译:
具有基于182 dBc / Hz FoM的三次谐波提取的具有隐式分频器的60 GHz 25%调谐范围频率发生器
作者:
Zhirui Zong
;
Babaie Masoud
;
Staszewski Robert Bogdan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
frequency dividers;
harmonic analysis;
phase noise;
CMOS;
FoM;
complementary metal oxide semiconductor;
figure-of-merit;
frequency 20 GHz;
frequency 60 GHz;
implicit divider;
phase noise;
size 40 nm;
third harmonic extraction;
tuning range frequency generator;
Frequency conversion;
Harmonic analysis;
Phase locked loops;
Phase noise;
Resonant frequency;
Tuning;
60 GHz;
divider;
harmonic boost;
harmonic extraction;
mm-wave;
oscillator;
18.
A self-interference cancelling front-end for in-band full-duplex wireless and its phase noise performance
机译:
带内全双工无线自干扰消除前端及其相位噪声性能
作者:
van den Broek Dirk-Jan
;
Klumperink Eric A. M.
;
Nauta Bram
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
interference suppression;
multiplexing;
radio receivers;
RX noise floor;
cointegrated transmitter;
frequency 0.15 GHz to 3.5 GHz;
frequency-agile RF front-end;
in-band full-duplex wireless;
phase noise performance;
self-interference cancelling front-end;
self-interference cancelling receiver;
Clocks;
Floors;
Noise measurement;
Phase noise;
Receivers;
Silicon;
Wireless communication;
Full-duplex;
interference cancellation;
phase noise;
self-interference;
transmitter;
19.
A pulsed UWB transmitter and receiver with 4-element beamforming for 1-Gbps meter-range WPAN applications
机译:
具有4元素波束成形的脉冲UWB发射机和接收机,用于1 Gbps米范围WPAN应用
作者:
Jaegan Ko
;
Gharpurey Ranjit
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
array signal processing;
frequency hop communication;
personal area networks;
radio transceivers;
telecommunication signalling;
ultra wideband communication;
4-element beamforming;
CMOS process;
ECC requirements satisfaction;
UWB transceiver;
WPAN;
bit rate 1 Gbit/s;
distance 2 m;
frequency 6 GHz to 8.5 GHz;
frequency hopping;
multiband signaling;
power 211 mW;
power 221 mW;
pulsed UWB receiver;
pulsed UWB transmitter;
pulsed signalling;
size 65 nm;
Array signal processing;
Baseband;
CMOS integrated circuits;
Frequency synthesizers;
Mixers;
Phase locked loops;
Receivers;
LNA;
PLL;
UWB;
beamforming;
20.
A 15-mW 7-GHz inductorless transimpedance amplifier and a 1-THz+ GBP limiting amplifier for 10GbE optical receivers
机译:
用于10GbE光接收器的15mW 7-GHz无电感器跨阻放大器和1-THz + GBP限制放大器
作者:
Ray Sagar
;
Hella Mona M.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
buffer circuits;
error statistics;
integrated optoelectronics;
operational amplifiers;
optical receivers;
optical testing;
photodiodes;
BER;
CMOS technology;
GBP limiting amplifier;
active Cherry-Hooper stage;
auxiliary amplifier;
bit rate 10 Gbit/s;
bit rate 7.5 Gbit/s;
capacitance 1 pF;
current 30 muA;
current buffer based TIA;
dual feedback loop;
frequency 1 THz;
frequency 7 GHz;
gain-bandwidth-product;
inductorless transimpedance amplifier;
nested feedback;
optical receiver;
optical testing;
photodiode;
power 15 mW;
power 180 mW;
resistance 50 ohm;
size 130 nm;
voltage 1.2 V;
voltage 600 mV;
Bandwidth;
Current measurement;
Limiting;
Optical buffering;
Optical receivers;
Optical variables measurement;
21.
A 79 GHz g
m
-boosted sub-harmonic mixer with high conversion gain in 65nm CMOS
机译:
在65nm CMOS中具有高转换增益的79 GHz g
m inf>增强型次谐波混频器
作者:
JinGyu Jang
;
JunTaek Oh
;
Songcheol Hong
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
circuit feedback;
millimetre wave mixers;
CMOS technology;
NMOS bleeding path;
complementary metal oxide semiconductor;
conversion gain;
differential LO-driven subharmonic mixer;
frequency 79 GHz;
gsubm/sub-boosted subharmonic mixer;
gain 1.6 dB;
noise figure 13 dB;
power 12 mW;
power consumption;
size 65 nm;
transformer based feedback network;
CMOS integrated circuits;
Frequency measurement;
Gain;
Hemorrhaging;
Mixers;
Semiconductor device measurement;
Transconductance;
CMOS technology;
Millimeter wave integrated circuits;
Mixers;
Transformers;
Ultra wideband radar;
22.
A quadrature switched capacitor power amplifier in 65nm CMOS
机译:
采用65nm CMOS的正交开关电容器功率放大器
作者:
Wen Yuan
;
Aparin Vladimir
;
Dunworth Jeremy
;
Seward Lee
;
Walling Jeffrey S.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
power amplifiers;
switched capacitor networks;
charge domain;
class-G dual-supply architecture;
efficiency 20 percent;
in-phase signal;
polar-EER-based digital PA;
quadrature SCPA;
quadrature signal;
quadrature-switched capacitor power amplifier;
shared capacitor array;
signal combination;
size 65 nm;
Arrays;
CMOS integrated circuits;
Capacitors;
Power amplifiers;
Power generation;
Switches;
Switching circuits;
Class-D PA;
Digital PA;
EER;
Polar PA;
Quadrature PA;
SCPA;
Switched-Capacitor PA;
23.
A 16-element W-band phased array transceiver chipset with flip-chip PCB integrated antennas for multi-gigabit data links
机译:
具有倒装芯片PCB集成天线的16元素W波段相控阵收发器芯片组,用于多千兆位数据链路
作者:
Shahramian S.
;
Holyoak M.J.
;
Baeyens Y.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
antenna phased arrays;
bipolar MIMIC;
flip-chip devices;
millimetre wave antenna arrays;
printed circuit design;
radio transceivers;
receiving antennas;
semiconductor materials;
transmitting antennas;
16-element W-band phased array transceiver chipset;
16-receive-4-transmit calibrated phase shifter elements;
BiCMOS technology;
QPSK wireless link;
SiGe;
bit rate 4.8 Gbit/s;
direct up-converters;
distance 20 m;
down-converters;
flip-chip PCB integrated antennas;
frequency 240 GHz;
frequency 270 GHz;
half-rate phase locked loop;
integrated antenna arrays;
multigigabit data links;
multigigabit spectrally-efficient wireless communication;
power 4.5 W;
power 5.5 W;
size 0.18 mum;
transceiver IC;
voltage 1.5 V;
voltage 2.5 V;
Arrays;
Calibration;
Integrated circuits;
Phase locked loops;
Phase shifters;
Phased arrays;
Receivers;
Calibration;
Direct-conversion;
Down-converter;
E-Band;
MMIC;
PCB Antenna;
Phased Array;
QAM Constellation;
SiGe BiCMOS;
Transmitter Receiver Array;
Up-converter;
W-Band;
24.
A 55-GHz power-efficient frequency quadrupler with high harmonic rejection in 0.1-µm SiGe BiCMOS technology
机译:
采用0.1 µm SiGe BiCMOS技术的具有高谐波抑制性能的55 GHz节能四倍频器
作者:
Yi-Shin Yeh
;
Floyd Brian A.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
bipolar MIMIC;
frequency multipliers;
harmonics suppression;
millimetre wave frequency convertors;
semiconductor materials;
BiCMOS technology;
SiGe;
V-band frequency quadrupler;
anti-phase class-AB cascode devices;
cascode stacks;
frequency 44.8 GHz to 57.2 GHz;
harmonic rejection;
harmonics suppression;
in-phase class-C common-emitter;
power-efficient frequency quadrupler;
size 0.1 mum;
BiCMOS integrated circuits;
Frequency measurement;
Harmonic analysis;
Power generation;
Power system harmonics;
Silicon germanium;
Transistors;
SiGe BiCMOS;
frequency multiplier;
frequency quadrupler;
poly-phase filter;
25.
A switched-capacitor RF front end with embedded programmable high order filtering and a +15dBm OB-B1dB
机译:
具有嵌入式可编程高阶滤波和+ 15dBm OB-B1dB的开关电容器RF前端
作者:
Yang Xu
;
Kinget Peter R.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
IIR filters;
impedance matching;
programmable filters;
radiofrequency filters;
switched capacitor filters;
CMOS front-end prototype;
N-path filtering;
RF input impedance matching;
current 38.5 mA to 76.5 mA;
down conversion;
frequency 0.1 GHz to 0.7 GHz;
frequency 30 MHz;
harmonic rejection ratio;
high order IIR filtering;
linear switch;
out-of-band blocker;
programmable filter;
switched capacitor RF front;
tunable center frequency;
Capacitors;
Clocks;
Frequency measurement;
Harmonic analysis;
Impedance;
Impedance matching;
Radio frequency;
26.
A 265 mW, 225 MHz signal bandwidth, and <1-dB gain step software defined cable receiver front-end enabling ultra-HDTV in 28nm CMOS
机译:
265 mW,225 MHz信号带宽和<1-dB增益阶跃软件定义了电缆接收器前端,可在28nm CMOS中实现超高清电视
作者:
Spiridon Silvian
;
Guermandi Davide
;
Bozzola Stefano
;
Han Yan
;
Introini Mattia
;
Koh Dongsoo
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
analogue-digital conversion;
cable television;
harmonics suppression;
high definition television;
low-pass filters;
signal conditioning circuits;
system-on-chip;
television receivers;
video streaming;
ADC resolution;
CMOS multimedia SoCs;
CMOS software-defined cable receiver front end;
SDRX gain partitioning strategy;
SDRX system-level design methodology;
analog signal conditioning;
area optimization;
bandwidth 100 MHz;
bandwidth 225 MHz;
baseband ADCs;
baseband low-pass filter;
circuit-level solutions;
cost reduction;
external filter complexity reduction;
harmonic rejection feature;
high-speed data streams;
home cable networks;
mixer;
optimal filtering strategy;
power 180 mW;
power 265 mW;
power optimization;
power-efficient SDRX architecture;
size 28 nm;
top-down design approach;
ultra-HDTV video streaming;
Bandwidth;
Baseband;
Gain;
Harmonic analysis;
Mixers;
Power harmonic filters;
Receivers;
Software-defined receiver;
System-level analysis;
System-on-chip;
27.
A symbol-duty-cycled 440 pJ/b impulse radio receiver with 0.57 aJ sensitivity in 130 nm CMOS
机译:
在130 nm CMOS中具有0.57 aJ灵敏度的符号占空比440 pJ / b脉冲无线电接收机
作者:
Vogrig Daniele
;
Bevilacqua Andrea
;
Gerosa Andrea
;
Neviani Andrea
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
pulse position modulation;
radio receivers;
2-PPM modulation;
bit rate 4.4 Mbit/s;
energy 0.57 aJ;
noncoherent CMOS UWB impulse radio receiver;
size 130 nm;
symbol-duty-cycled impulse radio receiver;
ultra-low energy consumption;
Bit error rate;
Impedance matching;
Mixers;
Partial discharges;
Receivers;
Sensitivity;
Synchronization;
UWB;
impulse radio;
non-coherent receiver;
28.
Sub-harmonic wireless injection locking of a THz CMOS chip array
机译:
THz CMOS芯片阵列的次谐波无线注入锁定
作者:
Jameson Samuel
;
Halpern Eliezer
;
Socher Eran
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
field effect MIMIC;
millimetre wave antennas;
millimetre wave oscillators;
phase noise;
submillimetre wave antennas;
submillimetre wave integrated circuits;
submillimetre wave oscillators;
terahertz wave devices;
voltage-controlled oscillators;
CMOS VCO chip array;
RF-choke;
VCO fundamental frequency;
buffer-less Colpitts topology;
cost effective locked CMOS THz scalable source arrays;
efficiency 1.2 percent;
efficiency 1.4 percent;
external D-band reference;
frequency 0.35 THz;
frequency 343 GHz to 347 GHz;
high power frequency locked THz radiation;
mm-wave oscillation;
on-chip ring antennas;
phase noise;
sub-harmonic wireless injection locking;
total radiated power;
Antennas;
Arrays;
CMOS integrated circuits;
Harmonic analysis;
Transistors;
Voltage-controlled oscillators;
CMOS;
Injection locking;
J-band;
THz;
VCO;
W-band;
antenna;
source;
wireless;
29.
A temperature compensated VCO using feed-forward gain multiplication for cellular applications
机译:
使用前馈增益乘法的温度补偿VCO,用于蜂窝应用
作者:
Yuyu Chang
;
Rozenblit Dmitriy
;
Saeidi Behzad
;
Leete John
;
Kahrizi Masoud
;
Chiu Janice
;
Sining Zhou
;
Vadipour Morteza
;
Juan Kevin
;
Magoon Rahul
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
3G mobile communication;
CMOS analogue integrated circuits;
LC circuits;
Long Term Evolution;
cellular radio;
integrated circuit noise;
phase locked loops;
phase noise;
voltage-controlled oscillators;
3G-LTE band I;
LC-tank VCO;
VCO behavior;
cellular application;
compensation circuit;
current 200 muA;
current 9 mA;
divide-by-two circuit;
feed-forward VCO gain multiplication technique;
fractional-N PLL;
frequency 2890 MHz to 4560 MHz;
frequency drift minimization;
phase noise;
size 40 nm;
temperature compensation circuit;
temperature variation;
temperature-compensated VCO;
temperature-dependent bias;
Frequency measurement;
Phase locked loops;
Phase noise;
Temperature measurement;
Tuning;
Varactors;
Voltage-controlled oscillators;
Phase-locked loops;
error compensation;
feed-forward systems;
phase noise;
temperature control;
voltage-controlled oscillators;
30.
A dynamically-biased 2G/3G/4G multi-band transmitter with > 4dBm P
out
, < −65dBc CIM3 and < −157dBc/Hz out-of-band noise in 28nm CMOS
机译:
动态偏置的2G / 3G / 4G多频带发射机,在28nm CMOS中具有> 4dBm P
out inf>,<-65dBc CIM3和<-157dBc / Hz带外噪声
作者:
Seth Siddharth
;
Kwon Daehyun
;
Venugopalan Sriramkumar
;
Sang Won Son
;
Yongrong Zuo
;
Bhagavatula Venumadhav
;
Lim Jaehyun
;
Dongjin Oh
;
Cho Thomas
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
3G mobile communication;
4G mobile communication;
CMOS integrated circuits;
Long Term Evolution;
UHF integrated circuits;
UHF mixers;
low-power electronics;
radio transmitters;
rectifying circuits;
1RB 4G LTE signals;
2G quad bands;
3G WCDMA-HSPA;
4G LTE;
ACLR;
CIM3;
CMOS technology;
FDD-TDD bands;
RX-band noise emission;
dynamically-biased 2G-3G-4G multiband transmitter;
dynamically-biased power mixer;
fully-differential hybrid full-wave rectifier-envelope detector circuit;
instantaneous baseband signal swing;
low power low-area SAW-less TX architecture;
out-of-band noise;
power-mixer bias current;
size 28 nm;
Baseband;
Envelope detectors;
Mixers;
Peak to average power ratio;
Radio frequency;
Radio transmitters;
Rectifiers;
2G/3G/4G mobile communications;
CMOS integrated circuit;
high-efficiency;
long-term-evolution (LTE);
out-of-band noise;
radio transmitters;
31.
Gain and noise optimization of a passive sliding IF architecture
机译:
无源滑动IF架构的增益和噪声优化
作者:
Bonehi S. Vahid M.
;
Beyerstedt Christoph
;
Zhimiao Chen
;
Lei Liao
;
Wunderlich Ralf
;
Heinen Stefan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
UHF frequency convertors;
UHF integrated circuits;
circuit optimisation;
integrated circuit modelling;
mathematical analysis;
CMOS technology;
IIP3 performance;
circuit simulation;
frequency 2.4 GHz;
gain 7.6 dB;
gain optimization;
low-IF receivers;
mathematical analysis;
mathematical derivation;
noise optimization;
passive sliding IF architecture;
passive sliding IF downconverter;
profound noise figure;
size 130 nm;
voltage 1.2 V;
zero-IF receivers;
CMOS integrated circuits;
Computer architecture;
Gain;
Integrated circuit modeling;
Mixers;
Radio frequency;
Receivers;
Conversion gain;
Low-IF;
Noise figure;
Passive mixer;
Sliding IF;
Zero-IF;
32.
A 2×2 Dynamic Polarization-Controlling integrated phased array
机译:
2×2动态偏振控制集成相控阵
作者:
Safaripour Amirreza
;
Bowers Steven M.
;
Dasgupta Kaushik
;
Hajimiri Ali
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
antenna phased arrays;
antenna radiation patterns;
beam steering;
electromagnetic wave polarisation;
phase control;
receiving antennas;
2D beam steering;
DPC multiport driven phased array radiation;
dynamic polarization-controlling integrated phased array;
gain 1.2 dB to 17.8 dB;
receiver antenna;
Antenna measurements;
Arrays;
CMOS integrated circuits;
Oscillators;
Polarization;
Receiving antennas;
Antenna arrays;
Beam steering;
CMOS integrated circuits;
Electromagnetic radiation;
Millimeter wave integrated circuits;
Phased arrays;
33.
A 60 GHz same-channel full-duplex CMOS transceiver and link based on reconfigurable polarization-based antenna cancellation
机译:
60 GHz同通道全双工CMOS收发器和基于可重新配置的基于极化的天线消除的链接
作者:
Dinc Tolga
;
Chakrabarti Anandaroop
;
Krishnaswamy Harish
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
field effect MIMIC;
interference suppression;
low noise amplifiers;
millimetre wave antennas;
phase noise;
radio transceivers;
LNA output;
Matlab;
SIC technique;
antenna domain;
direct-conversion SOI CMOS transceiver;
frequency 60 GHz;
fully-integrated full-duplex transceiver front-end;
mm-wave link;
nearby reflectors;
noise figure 4 dB;
phase control;
phase noise;
polarization-based wideband self-interference cancellation technique;
reconfigurable polarization-based antenna cancellation;
same-channel full-duplex CMOS transceiver;
same-channel full-duplex link;
second RF cancellation path;
self-interference suppression;
size 45 nm;
Antennas;
Gain;
Radio frequency;
Receivers;
Silicon;
Silicon carbide;
Transceivers;
34.
A 60 GHz single-chip 256-element wafer-scale phased array with EIRP of 45 dBm using sub-reticle stitching
机译:
使用亚标线缝线的EIRP为45 dBm的60 GHz单芯片256元素晶圆级相控阵
作者:
Zihir Samet
;
Gurbuz Ozan D.
;
Karroy Arjun
;
Raman Sanjay
;
Rebeiz Gabriel M.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
antenna phased arrays;
bipolar MIMIC;
millimetre wave antenna arrays;
reticles;
transmitting antennas;
BiCMOS technology;
E-planes;
H-planes;
amplifier;
control circuit blocks;
cross-polarization level;
frequency 58 GHz to 64 GHz;
high-efficiency on-wafer antennas;
independent RF;
phase control;
power strips;
redundant RF distribution network;
redundant SPI control;
single-chip 256-element wafer-scale transmit phased array;
sub-reticle stitching;
transmission-line;
word length 3 bit;
word length 5 bit;
Arrays;
Couplers;
Feeds;
Gain;
Radio frequency;
Semiconductor device measurement;
Silicon germanium;
Mm-wave;
Phased array;
SiGe BiCMOS;
Stitching;
Wafer-scale;
35.
A time-interleaved multi-mode ΔΣ RF-DAC for direct digital-to-RF synthesis
机译:
时间交织的多模ΔΣRF-DAC,用于直接数字到RF合成
作者:
McCue Jamin J.
;
Dupaix Brian
;
Duncan Lucas
;
Patel Vipul J.
;
Quach Tony
;
Khalil Waleed
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS digital integrated circuits;
Ge-Si alloys;
UHF integrated circuits;
delta-sigma modulation;
digital-analogue conversion;
direct digital synthesis;
semiconductor materials;
signal synthesis;
ΔΣ modulator;
BP DSM;
BiCMOS;
DAC image;
HP DSM;
LO alignment;
SIRR;
SiGe;
analog I/Q combining;
band-pass DSM;
clock frequency;
data clock;
direct digital-to-RF synthesis;
embedded-mixer ΔΣ RF-DACs;
frequency 0.5 GHz;
frequency 1 GHz;
frequency 1.5 GHz;
high-pass DSM;
in-band SFDR;
local oscillator;
multimode delta-sigma RF digital-to-analog converter;
power 55 mW;
signal synthesis;
signal-to-image rejection ratio;
size 130 nm;
software-defined radio;
time-interleaved multimode ΔΣ RF-DAC;
Bandwidth;
Baseband;
Clocks;
Frequency modulation;
Radio frequency;
Silicon germanium;
I/Q;
RF-DAC;
delta sigma modulation;
high-pass modulation;
image rejection;
interleaving;
36.
A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology
机译:
SiGe BiCMOS技术中的17.8 dBm 110–130 GHz功率放大器和倍频器链
作者:
Ben Yishay Roee
;
Elad Danny
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
MIMIC;
frequency multipliers;
millimetre wave power amplifiers;
D-band frequency multiplier-amplifier chain;
SiGe;
V-band;
balanced three-stage power amplifier;
compression point;
doubler chain;
frequency 110 GHz to 130 GHz;
gain 32 dB;
input balun;
peak small-signal gain of;
power 600 mW;
power amplifier;
push-push frequency doubler;
silicon-germanium BiCMOS technology;
size 0.12 mum;
total DC power;
Bandwidth;
Gain;
Heterojunction bipolar transistors;
Impedance matching;
Power amplifiers;
Power generation;
Silicon germanium;
D-Band;
Frequency Doubler;
Millimeter-wave Integrated Circuits;
Power Amplifier;
SiGe BiCMOS;
37.
A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration
机译:
采用32nm SOI CMOS技术的18mW,3.3dB NF,60GHz LNA,具有自主NF校准
作者:
Plouchart J.-O.
;
Wang F.
;
Balteanu A.
;
Parker B.
;
Sanduleanu M.A.T.
;
Yeck M.
;
Chen V.H.-C.
;
Woods W.
;
Sadhu B.
;
Valdes-Garcia A.
;
Li X.
;
Friedman D.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
field effect MIMIC;
low noise amplifiers;
millimetre wave amplifiers;
silicon-on-insulator;
system-on-chip;
3-stage cascode LNA;
ADC;
LNA;
SOI CMOS technology;
adaptive biasing algorithm;
autonomic NF calibration;
frequency 53 GHz to 62 GHz;
indirect NF sensing algorithm;
microcontroller;
noise figure 3.3 dB;
power 18 mW;
self-healing mmWave SoC;
size 32 nm;
storage capacity 12 Kbit;
temperature sensor;
Current measurement;
Noise measurement;
Semiconductor device measurement;
Sensors;
Temperature measurement;
Transmission line measurements;
Voltage measurement;
60GHz;
LNA;
Mm-wave;
NF;
SoC;
autonomic calibration;
38.
A 3-band switched-inductor LC VCO and differential current re-use doubler achieving 0.7-to-11.6 GHz tuning range
机译:
一个3波段开关电感器LC VCO和差分电流重复使用倍频器,可实现0.7至11.6 GHz的调谐范围
作者:
Sadhu Bodhisatwa
;
Kalia Sachin
;
Harjani Ramesh
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MMIC frequency convertors;
MMIC oscillators;
UHF frequency convertors;
UHF integrated circuits;
UHF oscillators;
field effect MMIC;
frequency multipliers;
voltage-controlled oscillators;
3-band switched-inductor LC VCO;
CMOS process;
current reuse differential frequency doubler;
frequency 0.7 GHz to 11.6 GHz;
frequency aware switch;
size 65 nm;
word length 3 bit;
word length 8 bit;
Arrays;
Capacitors;
Inductors;
Phase noise;
Switches;
Tuning;
Voltage-controlled oscillators;
39.
A 3.6cm2 wirelessly-powered UWB SoC with −30.7dBm rectifier sensitivity and sub-10cm range resolution
机译:
具有3.6cm 2 sup>无线供电的UWB SoC,具有-30.7dBm的整流器灵敏度和低于10cm的范围分辨率
作者:
Jian Kang
;
Chiang Patrick
;
Natarajan Arun
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS digital integrated circuits;
microwave antennas;
microwave power transmission;
rectifiers;
system-on-chip;
ultra wideband technology;
antenna area;
antenna-rectifier co-design methodology;
area-constrained localization application;
batteryless wirelessly-powered UWB SoC;
frequency 8 GHz;
low-voltage UWB TX;
office corridor;
power-management unit;
pulse repetition rate;
range resolution;
rectifier output voltage;
rectifier sensitivity;
system-on-a-chip;
tag area constraint;
voltage 0.8 V;
wireless measurement;
Antenna measurements;
CMOS integrated circuits;
Sensitivity;
Sensors;
Ultra wideband antennas;
Wireless sensor networks;
40.
A 60-GHz CMOS direct-conversion Doppler radar RF sensor with clutter canceller for single-antenna noncontact human vital-signs detection
机译:
具有杂波消除器的60 GHz CMOS直接转换多普勒雷达RF传感器,用于单天线非接触式人体生命体征检测
作者:
Hsin-Chih Kuo
;
Chien-Chang Chou
;
Chien-Chih Lin
;
Chun-Han Yu
;
Tzuen-Hsi Huang
;
Huey-Ru Chuang
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
Doppler radar;
field effect MIMIC;
interference suppression;
medical signal detection;
medical signal processing;
millimetre wave antennas;
millimetre wave circulators;
millimetre wave detectors;
millimetre wave radar;
radar antennas;
radar clutter;
radar detection;
CMOS direct-conversion Doppler radar RF sensor;
background reflection clutter;
clutter canceller;
distance 75 cm;
frequency 0.35 Hz to 1.3 Hz;
gain 10.5 dB;
high isolation QC;
human vital-signs detection measurement;
power 217 mW;
quasicirculator;
single-antenna Doppler radar architecture;
single-antenna noncontact human vital-signs detection;
size 90 nm;
sub-harmonic receiver;
weak vital signal detection sensitivity;
wireless remote physiological monitoring healthcare system;
CMOS integrated circuits;
Clutter;
Doppler radar;
Gain;
Radar antennas;
Radio frequency;
60-GHz;
Doppler radar;
clutter canceller;
human vital-signs;
millimeter-wave;
noncontact;
quasi-circulator;
sensor;
41.
High resolution thermal characterization of a GaAs MMIC
机译:
GaAs MMIC的高分辨率热表征
作者:
Kendig Dustin
;
Yazawa Kazuaki
;
Shakouri Ali
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC;
crosstalk;
gallium arsenide;
infrared imaging;
integrated circuit measurement;
temperature measurement;
GaAs;
MMIC;
high resolution thermal characterization;
sub-micron spatial resolutions;
sub-microsecond temporal spatial resolutions;
temperature measurement;
thermal crosstalk;
thermal imaging technique;
time 100 mus;
transistor arrays;
Imaging;
Logic gates;
MMICs;
Spatial resolution;
Temperature;
Temperature measurement;
Transistors;
Temperature measurement;
42.
A 65nm CMOS low power impulse radar for respiratory feature extraction
机译:
用于呼吸特征提取的65nm CMOS低功率脉冲雷达
作者:
Shao-Ting Tseng
;
Yu-Hsien Kao
;
Chun-Chieh Peng
;
Jinn-Yann Liu
;
Shao-Chang Chu
;
Guo-Feng Hong
;
Chi-Hsuan Hsieh
;
Kung-Tuo Hsu
;
Wen-Te Liu
;
Yuan-Hao Huang
;
Shi-Yu Huang
;
Ta-Shun Chu
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
biomedical electronics;
biomedical measurement;
digital signal processing chips;
feature extraction;
low-power electronics;
patient monitoring;
radar applications;
wireless sensor networks;
CMOS low power impulse radar chip;
DSP platform;
TSMC CMOS technology;
all digital standard cell-based design;
human respiratory activity monitoring;
human respiratory feature extraction;
human respiratory feature extraction algorithm;
power 21 mW;
power consumption;
pulse generator;
range gated sensing;
respiratory diseases;
size 65 nm;
timing circuitry;
wireless sensor system;
CMOS integrated circuits;
Feature extraction;
Radar;
Radar antennas;
Receivers;
Wireless communication;
Wireless sensor networks;
CMOS;
DSP;
human respiratory feature extraction algorithm;
impulse radar;
wireless sensor;
43.
A Sub-GHz low-power transceiver with PAPR-tolerant power amplifier for 802.11ah applications
机译:
具有耐PAPR的功率放大器的Sub-GHz低功耗收发器,用于802.11ah应用
作者:
Xiaobao Yu
;
Meng Wei
;
Yun Yin
;
Ying Song
;
Zhihua Wang
;
Yichuang Sun
;
Baoyong Chi
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
UHF integrated circuits;
UHF power amplifiers;
low-power electronics;
phase locked loops;
radio transceivers;
signal detection;
voltage-controlled oscillators;
wireless LAN;
Σ-Δ fractional-N PLL;
802.11ah application;
CMOS PA;
IRR;
JESD207 interface;
LO leakage;
PA back-off efficiency;
PA operation mode;
PAE improvement;
PAPR-tolerant power amplifier;
bandwidth 1 MHz;
bandwidth 2 MHz;
bandwidth 8 MHz;
class-C VCO;
digital baseband;
digitally-assisted self-calibration;
efficiency 25.5 percent;
frequency 750 MHz to 930 MHz;
fully-integrated sub-GHz low-power TRX;
fully-integrated sub-GHz low-power transceiver;
high-power mode;
image rejection ratio;
input signal PAPR detection;
low-IF-zero-IF architectures;
low-power mode;
noise figure 4 dB;
peak-to-average-power-ratio;
power 18.9 mW;
power control loop;
reconfigurable signal bandwidth;
size 180 nm;
voltage 1.7 V;
Impedance matching;
Peak to average power ratio;
Power amplifiers;
Power control;
System-on-chip;
Transceivers;
Voltage-controlled oscillators;
802.11ah;
CMOS;
PAPR;
digital self-calibration;
low-power;
power amplifier;
transceiver;
44.
A 192MHz differential XO based frequency quadrupler with sub-picosecond jitter in 28nm CMOS
机译:
基于192MHz差分XO的四倍频器,具有28nm CMOS的亚皮秒级抖动
作者:
Ghahramani Mohammad Mahdi
;
Rajavi Yashar
;
Khalili Alireza
;
Kavousian Amirpouya
;
Beomsup Kim
;
Flynn Michael P.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
crystal oscillators;
frequency multipliers;
inductors;
integrated circuit noise;
invertors;
jitter;
phase locked loops;
phase noise;
radiofrequency integrated circuits;
CMOS technology;
MDLL circuit;
active inductor;
crystal oscillator;
crystal reference quadrupler;
current 5.5 mA;
differential XO based frequency quadrupler;
duty cycle correction circuit;
frequency 192 MHz;
frequency 48 MHz;
frequency 96 MHz;
frequency doubler;
phase noise PLL circuit;
reference multiplying PLL circuit;
size 28 nm;
skewed inverter;
subpicosecond jitter;
time 184 fs;
voltage 1 V;
Active inductors;
Clocks;
Crystals;
Impedance;
Inverters;
Jitter;
Phase noise;
Oscillators;
jitter;
phase noise;
45.
A 2.4GHz 72dB-variable-gain 100dB-DR 7.8mW 4th-order tunable Q-enhanced LC band-pass filter
机译:
2.4GHz 72dB可变增益100dB-DR 7.8mW第4级可调Q增强LC带通滤波器
作者:
Testi Nicolo
;
Berenguer Roc
;
Xuejun Zhang
;
Munoz Sara
;
Yang Xu
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
LC circuits;
active filters;
band-pass filters;
inductors;
linearisation techniques;
microwave filters;
CMOS technology;
EM isolation structure;
RF BPF;
RF channel selection;
RF linearization technique;
active tunable Q-enhanced LC band-pass filter;
bandwidth 12 MHz;
dynamic range enhancement;
frequency 0.4 MHz;
frequency 2.35 GHz to 2.48 GHz;
frequency 2.4 GHz;
gain 72 dB;
inductor;
mutual coupling reduction;
power 7.8 mW;
size 55 nm;
variable gain;
Band-pass filters;
Frequency response;
Gain;
Inductors;
Linearization techniques;
Radio frequency;
Q-enhanced;
RF filters;
active filters;
band-pass filters;
linearization techniques;
mutual coupling;
46.
A 30 Gb/s CMOS driver integrated with silicon photonics MZM
机译:
集成了硅光子MZM的30 Gb / s CMOS驱动器
作者:
Ke Li
;
Thomson Dave J.
;
Shenghao Liu
;
Wilson Peter
;
Reed Graham T.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
driver circuits;
electro-optical modulation;
elemental semiconductors;
integrated circuit testing;
integrated optics;
modulators;
optical transmitters;
silicon;
CMOS driver integration;
Mach-Zehnder modulator;
Si;
TSMC low power CMOS process;
bit rate 30 Gbit/s;
bit rate 40 Gbit/s;
electrical testing;
equivalent CML modulator driver;
gain 4.05 dB;
integrated electrooptic transmitter;
power 323 mW;
silicon photonics MZM;
single-ended output swing;
voltage 1.65 V;
voltage mode modulator driver;
Bandwidth;
CMOS integrated circuits;
Inductors;
Modulation;
Optical transmitters;
Power demand;
Silicon photonics;
Mach-Zehnder Modulator (MZM);
modulator driver;
power amplifiers;
silicon photonics;
47.
A 312GHz antenna array receiver in 65nm CMOS utilizing self-oscillating 3X subharmonic mixer frontend
机译:
采用自激3X次谐波混频器前端的65nm CMOS的312GHz天线阵列接收器
作者:
Yen-Ju Chen
;
Ta-Shun Chu
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
UHF antennas;
field effect MIMIC;
loop antennas;
millimetre wave antenna arrays;
submillimetre wave antennas;
submillimetre wave integrated circuits;
submillimetre wave mixers;
submillimetre wave receivers;
superheterodyne receivers;
4-element loop antenna array;
CMOS process;
Gilbert-cell mixer;
LO;
RF input signal;
antenna array receiver;
bandwidth 1.2 GHz;
double-conversion superheterodyne architecture;
frequency 312 GHz to 1.7 GHz;
loss 19 dB;
power 110 mW;
self-oscillating 3X subharmonic mixer frontend;
size 65 nm;
Antenna arrays;
Antenna measurements;
Arrays;
Mixers;
Oscillators;
Receiving antennas;
CMOS;
THz;
antenna array;
loop antenna;
self-oscillating mixer (SOM);
subharmonic;
48.
A 38 GHz inverse class-F power amplifier with 38.5 peak PAE, 16.5 dB gain, and 50 mW P
sat
in 0.13-µm SiGe BiCMOS
机译:
38 GHz反向F类功率放大器,在0.13 µm SiGe BiCMOS中具有38.5%的峰值PAE,16.5 dB的增益和50 mW的P
sat inf>
作者:
Mortazavi Seyed Yahya
;
Kwang-Jin Koh
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
field effect MIMIC;
millimetre wave power amplifiers;
2-stage harmonic-tuned power amplifier;
2nd harmonic band;
3rd harmonic band;
BiCMOS technology;
SiGe;
class-AB driving stage;
efficiency 38.5 percent;
frequency 38 GHz;
gain 16.5 dB;
interstage matching;
inverse class-F power amplifier;
load impedance modulation;
multiresonance series;
parallel load network;
power 50 mW;
resistance 50 ohm;
size 0.13 mum;
BiCMOS integrated circuits;
Harmonic analysis;
Impedance;
Power amplifiers;
Power generation;
Power system harmonics;
Silicon germanium;
28 GHz;
38 GHz;
5G LTE;
Class-F−1;
Q-band PA;
harmonic tuned power amplifier;
inverse class F;
49.
A 380µW Rx, 2.6mW Tx 433MHz FSK transceiver with a 102dB link budget and bit-level duty cycling
机译:
380µW Rx,2.6mW Tx 433MHz FSK收发器,具有102dB的链路预算和位级占空比
作者:
Roberts Nathan E.
;
Kines Michael C.
;
Wentzloff David D.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
UHF amplifiers;
UHF integrated circuits;
UHF power amplifiers;
demodulators;
frequency shift keying;
radio transceivers;
1/d2 path loss;
2-FSK modulation;
CMOS process;
FSK transceiver;
bit rate 1 kbit/s;
bit-level duty cycling;
class-E PA;
digitally-assisted demodulator;
frequency 433 MHz;
link budget;
low receiver power;
low transmitter power;
low-power long-range transceiver;
power 110 nW;
power 2.6 mW;
power 380 muW;
power reduction;
size 130 nm;
voltage 0.5 V;
Demodulation;
Frequency shift keying;
Phase locked loops;
Radio frequency;
Receivers;
Sensitivity;
Transceivers;
FSK;
Internet of Things;
Low power radios;
duty cycling;
50.
A 0.5V 0.5mW switching current source oscillator
机译:
0.5V 0.5mW开关电流源振荡器
作者:
Babaie Masoud
;
Shahmohammadi Mina
;
Staszewski Robert Bogdan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
MOSFET;
low-power electronics;
microwave oscillators;
1-f noise upconversion;
CMOS prototype;
RF oscillator topology;
complementary push-pull oscillators;
conventional NMOS cross-coupled oscillators;
current efficiency;
current source transistors;
frequency 4 GHz to 5 GHz;
low-supply voltage operation;
power 0.5 mW;
size 40 nm;
switching current source oscillator;
ultralow-power application;
ultralow-voltage application;
voltage 0.5 V;
Oscillators;
Power demand;
Q-factor;
Radio frequency;
Switches;
Topology;
Transistors;
DCO;
Switching current source oscillator;
VCO;
transformer;
ultra-low voltage/power oscillators;
51.
A capacitance boosted full-octave LC VCO based 0.7 to 24 GHz fractional-N synthesizer
机译:
基于电容提升的全倍频LC VCO基于0.7至24 GHz分数N合成器
作者:
Sadhu Bodhisatwa
;
Ferriss Mark
;
Friedman Daniel
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
LC circuits;
MMIC oscillators;
UHF oscillators;
circuit tuning;
frequency synthesizers;
integrated circuit noise;
phase noise;
silicon-on-insulator;
varactors;
voltage-controlled oscillators;
SOI CMOS;
Si;
capacitance-boosted full-octave LC VCO;
continuous tuning;
fractional-N synthesizer;
frequency 0.7 GHz to 24 GHz;
output divider circuits;
phase noise;
series inductance;
size 32 nm;
varactor maximum-minimum capacitance ratio;
Capacitance;
Phase noise;
Switches;
Tuning;
Varactors;
Voltage-controlled oscillators;
VCO;
switched capacitor;
tuning range;
varactor;
52.
A 0.68V 0.68mW 2.4GHz PLL for ultra-low power RF systems
机译:
适用于超低功耗RF系统的0.68V 0.68mW 2.4GHz PLL
作者:
Paidimarri Arun
;
Ickes Nathan
;
Chandrakasan Anantha P.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Bluetooth;
CMOS logic circuits;
flip-flops;
phase locked loops;
VCO;
charge pump;
dynamic flip-flop design optimization;
frequency 2.4 GHz;
phase locked loops;
power 0.68 mW;
ultra-low power Bluetooth low energy;
ultra-low power RF system;
voltage 0.68 V;
Charge pumps;
Low voltage;
Phase locked loops;
Phase noise;
Power demand;
Radio frequency;
Voltage-controlled oscillators;
2.4GHz;
BLE;
Bluetooth Low Energy;
PLL;
RF;
leakage;
low duty cycle;
low power;
low voltage;
sub-0.7V;
53.
A 0.7V 194µW 31dB FOM 2.3–2.5 GHz RF frontend for WBAN with mutual noise cancellation using passive coupling
机译:
用于WBAN的0.7V 194µW 31dB FOM 2.3–2.5 GHz RF前端,使用无源耦合实现相互噪声消除
作者:
Rahman Mustafijur
;
Harjani Ramesh
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
body area networks;
personal area networks;
radio receivers;
IEEE 802.15.6 narrowband receiver;
WBAN;
frequency translated mutual noise cancellation;
low power low noise mixer;
passive coupling;
power 194 muW;
voltage 0.7 V;
Integrated circuit modeling;
Mixers;
Noise cancellation;
Noise measurement;
Radio frequency;
Transfer functions;
Transistors;
802.15.6;
RF;
WBAN;
low power;
noise cancellation;
receiver;
54.
A 1.8GHz wideband open-loop phase modulator with TDC based non-linearity calibration in 0.13µm CMOS
机译:
一个1.8GHz宽带开环相位调制器,在0.13µm CMOS中具有基于TDC的非线性校准
作者:
Nidhi Nitin
;
Pamarti Sudhakar
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS digital integrated circuits;
digital phase locked loops;
frequency shift keying;
modulators;
phase modulation;
time-digital conversion;
CMOS GFSK transmitter integrated circuit;
GFSK signal;
TDC-based nonlinearity calibration;
bit rate 20 Mbit/s;
digital calibration;
digital phase-locked loop;
frequency 1.8 GHz;
open-loop RF phase modulator;
out-of-band quantization noise;
power 18 mW;
size 0.13 mum;
wideband open-loop phase modulator;
Bandwidth;
Calibration;
Phase locked loops;
Phase measurement;
Phase modulation;
Table lookup;
Transmitters;
Phase modulation;
frequency modulation;
phase locked loops;
phase measurement;
power amplifiers;
55.
A 103fs
rms
1.32mW 50MS/s 1.25MHz bandwidth two-step flash-ΔΣ time-to-digital converter for ADPLL
机译:
适用于ADPLL的103fs
rms inf> 1.32mW 50MS / s 1.25MHz带宽两步闪存-ΔΣ时间数字转换器
作者:
Ying Wu
;
Ping Lu
;
Staszewski Robert Bogdan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
adders;
delta-sigma modulation;
digital phase locked loops;
radiofrequency integrated circuits;
time-digital conversion;
2-channel time-interleaved timedomain register;
3rd order noise-shaping;
ADPLL;
CMOS technology;
TDC;
bandwidth 1.25 MHz;
current 1.2 mA;
implicit adder-subtractor;
size 40 nm;
time 1.6 ps;
time 103 fs;
two-step flash-ΔΣ time-to-digital converter;
voltage 1.1 V;
Bandwidth;
Clocks;
Discharges (electric);
Multi-stage noise shaping;
Quantization (signal);
Registers;
MASH;
Noise shaping;
error feedback;
time domain register;
time-interleaved;
time-to-digital converter;
56.
A 130nm RFSOI technology with switch, LNA, and EDNMOS devices for integrated front-end module SoC applications
机译:
具有开关,LNA和EDNMOS器件的130nm RFSOI技术,用于集成的前端模块SoC应用
作者:
Purakh Raj Verma
;
Shaoqiang Zhang
;
Rui Tze Toh
;
Jen Shuang Wong
;
Gao Wei
;
Kok Wai Chew
;
Nair Rajesh
;
Harame David
;
Watts Josef
;
Mckay Thomas
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS digital integrated circuits;
Long Term Evolution;
MOSFET circuits;
field effect MIMIC;
low noise amplifiers;
millimetre wave power amplifiers;
silicon-on-insulator;
system-on-chip;
CMOS process;
EDNMOS devices;
III-V PHEMT;
LNA devices;
LTE standards;
RFSOI technology;
antenna switch;
cellular frequency spectrum;
cost reduction;
frequency 38 GHz;
integrated front-end module SoC applications;
low noise body tied NMOS;
power amplifier devices;
size 130 nm;
size 180 nm;
voltage 1.5 V;
voltage 14 V;
CMOS integrated circuits;
Logic gates;
Performance evaluation;
Radio frequency;
Silicon;
Switches;
Transistors;
CMOS;
Radio Frequency;
Semiconductor Device;
57.
A 25-Gb/s FIR equalizer based on highly linear all-pass delay-line stages in 28-nm LP CMOS
机译:
基于28nm LP CMOS的高度线性全通延迟线级的25Gb / s FIR均衡器
作者:
Loi F.
;
Mammei E.
;
Radice F.
;
Bruccoleri M.
;
Erba S.
;
Bassi M.
;
Mazzanti A.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
FIR filters;
all-pass filters;
delay lines;
equalisers;
radio receivers;
radiofrequency integrated circuits;
4-tap FIR equalizer;
BER;
FIR filters;
LP CMOS;
SNR;
adaptation techniques;
bit rate 25 Gbit/s;
channel frequency response;
current 25 mA;
high speed wireline receivers;
input signal amplitude;
linear all-pass delay-line stages;
loss 20 dB;
loss channel;
size 28 nm;
voltage 1 V;
voltage 900 mV;
Adders;
Bit error rate;
CMOS integrated circuits;
CMOS technology;
CMOS;
FIR;
adaptive equalizer;
all-pass;
wireline;
58.
A 25.6 dBm wireless transmitter using RF-PWM with carrier switching in 130-nm CMOS
机译:
使用RF-PWM并在130nm CMOS中进行载波切换的25.6 dBm无线发射机
作者:
Kunhee Cho
;
Gharpurey Ranjit
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
OFDM modulation;
pulse width modulation;
quadrature amplitude modulation;
radio transmitters;
radiofrequency integrated circuits;
802.11g 64-QAM OFDM signal;
CMOS process;
OFDM;
PAE;
PAPR;
RF-PWM;
carrier switching;
efficiency 16 percent;
efficiency 34 percent;
gain -25.5 dB;
peak-to-average power ratio;
power back-off region;
power-added-efficiency;
pulse-width-modulation;
size 130 nm;
switching loss reduction;
wireless transmitter;
CMOS integrated circuits;
Harmonic analysis;
Power generation;
Radio frequency;
Radio transmitters;
Switches;
Synchronization;
CMOS power amplifier;
RF-PWM;
WLAN;
carrier switching;
class-D PA;
switching PA;
wireless transmitter;
59.
A 6.39GHz–14GHz series resonator mode-switching oscillator with 186–188dB FoM and 197dB FoMA in 65nm CMOS
机译:
在65nm CMOS中具有186–188dB FoM和197dB FoMA的6.39GHz–14GHz系列谐振器模式切换振荡器
作者:
Agrawal Abhishek
;
Natarajan Arun
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
circuit tuning;
phase noise;
voltage-controlled oscillators;
CMOS LC voltage-controlled oscillator;
FoMA;
VCO figure-of-merit;
complementary metal oxide semiconductor;
frequency 2.2 GHz to 8.7 GHz;
frequency 6.39 GHz to 14 GHz;
frequency tuning-range;
inductor;
phase noise;
power-efficient resonant mode-switching approach;
series resonator mode-switching oscillator;
size 65 nm;
wide-FTR oscillator;
wideband radio;
CMOS integrated circuits;
Frequency measurement;
Inductance;
Inductors;
Phase noise;
Voltage-controlled oscillators;
60.
A Class-C self-mixing-VCO architecture with high tuning-range and low phase-noise for mm-wave applications
机译:
具有毫米波应用的高调谐范围和低相位噪声的C类自混合VCO架构
作者:
Shirazi Amir Hossein Masnadi
;
Nikpaik Amir
;
Molavi Reza
;
Mirabbasi Shahriar
;
Shekhar Sudip
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
field effect MIMIC;
integrated circuit noise;
phase noise;
voltage-controlled oscillators;
CMOS process;
FTR-inclusive figure-of-merit;
PN performance;
SMV architecture;
class-C push-push VCO topology;
class-C self-mixing-VCO architecture;
frequency 52.8 GHz to 62.5 GHz;
frequency tuning range;
fundamental-mode VCO;
mixing efficiency;
mm-wave VCO;
mm-wave voltage-controlled oscillators;
parasitic capacitance;
phase noise reduction;
phase-noise performance;
power 7.6 mW;
second harmonics;
size 0.13 mum;
third-harmonic component;
tuning-range;
voltage 1.2 V;
Harmonic analysis;
Mixers;
Phase noise;
Radiofrequency integrated circuits;
Tuning;
Voltage-controlled oscillators;
60-GHz;
Class-C;
SMV;
Self-Mixing-VCO;
high tuning range;
low phase noise;
mm-wave;
61.
A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process
机译:
采用28 nm UTBB FD-SOI CMOS工艺的2.8至5.8 GHz谐波VCO
作者:
Fanori Luca
;
Mahmoud Ahmed
;
Mattsson Thomas
;
Caputa Peter
;
Ramo Sami
;
Andreani Pietro
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MMIC oscillators;
UHF integrated circuits;
UHF oscillators;
field effect MMIC;
harmonic oscillators (circuits);
low-power electronics;
phase noise;
silicon-on-insulator;
voltage-controlled oscillators;
8-shaped tank coil;
UTBB FD-SOI CMOS process;
external magnetic fields;
figure-of-merit;
frequency 2.8 GHz to 5.8 GHz;
harmonic VCO;
oscillation frequency;
phase noise;
power consumption;
size 28 nm;
ultra-thin buried oxide and body fully-depleted SOI CMOS process;
voltage 0.9 V;
CMOS integrated circuits;
Capacitance;
Inductors;
Phase noise;
Tuning;
Voltage-controlled oscillators;
UTBB FD-SOI CMOS;
VCO;
class-B;
low phase noise;
one octave;
reconfigurable core;
62.
A 24 GS/s single-core flash ADC with 3 bit resolution in 28 nm low-power digital CMOS
机译:
在28 nm低功耗数字CMOS中具有3位分辨率的24 GS / s单核闪存ADC
作者:
Tretter G.
;
Khafaji M.
;
Fritsche D.
;
Carta C.
;
Ellinger F.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS digital integrated circuits;
analogue-digital conversion;
integrated circuit design;
low-power electronics;
LP digital CMOS;
figure of merit;
flash ADC;
full sampling rate;
low-power digital CMOS;
power 406 mW;
power consumption;
single-core flash ADC;
size 28 nm;
ultra-high-speed ADC systems;
word length 3 bit;
Ash;
Bandwidth;
CMOS integrated circuits;
CMOS technology;
Clocks;
Silicon germanium;
Transmission line measurements;
Analog-to-digital converter (ADC);
flash ADC;
non-time-interleaved;
single-core;
63.
A 3–10mW, 3.1–10.6GHz integer-N QPLL with reference spur reduction technique for UWB-based cognitive radios
机译:
3–10mW,3.1–10.6GHz整数N QPLL,具有基于UWB的认知无线电的参考杂散抑制技术
作者:
Nam-Seog Kim
;
Rabaey Jan M.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
cognitive radio;
phase locked loops;
power dividers;
ultra wideband communication;
UWB-based cognitive radios;
charge pump mismatch;
digital calibration technique;
frequency 3.1 GHz to 10.6 GHz;
integer-N charge pump QPLL;
power 3 mW to 10 mW;
reference spur reduction technique;
wideband low power TSPC programmable divider;
CMOS integrated circuits;
Calibration;
Charge pumps;
Phase locked loops;
Phase noise;
Power demand;
Voltage-controlled oscillators;
Quadrature PLL;
Reference spur;
Ring VCO;
TSPC programmable divider;
64.
A 4.6–5.35GHz transceiver with 38dB on-chip self-interference cancelation at 10kHz offset frequency
机译:
一个4.6–5.35GHz收发器,在10kHz偏移频率下具有38dB的片上自干扰消除
作者:
Xuebei Yang
;
Babakhani Aydin
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
interference suppression;
magnetic resonance spectroscopy;
microwave devices;
radio transceivers;
radiofrequency interference;
Bsub0/sub-sweep method;
RX signal;
SNR;
TX leakage;
active on-chip self-interference cancellation;
frequency 4.6 GHz to 5.35 GHz;
frequency-sweep method;
gain 15 dB;
gain 38 dB;
magnetic resonance spectroscopy;
noise figure 15 dB;
transceiver;
Frequency measurement;
Interference;
Radio frequency;
Resonant frequency;
Spectroscopy;
Transceivers;
Voltage-controlled oscillators;
EPR;
ESR;
SiGe;
Silicon;
Transceiver;
full-duplex;
self-interference cancelation;
spectroscopy;
65.
A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS
机译:
40nm至67GHz带宽23dB增益,5.8dB最大NF毫米波LNA(28nm CMOS)
作者:
Hadipour Kambiz
;
Ghilioni Andrea
;
Mazzanti Andrea
;
Bassi Matteo
;
Svelto Francesco
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
LC circuits;
field effect MIMIC;
low noise amplifiers;
ultra wideband technology;
CMOS;
bandwidth 40 GHz to 67 GHz;
bandwidth maximization;
current-sharing configuration;
gain 23 dB;
gain flatness;
mm-wave LNA;
noise figure 5.8 dB;
power 25.3 mW;
size 28 nm;
stagger-tuned stages;
third-order L-C band-pass networks;
ultrawideband LNA;
wideband receivers;
Bandwidth;
CMOS integrated circuits;
Frequency response;
Gain;
Inductors;
Noise measurement;
Transistors;
CMOS integrated circuits;
Low-noise amplifiers;
Low-power electronics;
Millimeter wave integrated circuits;
Wideband;
66.
A 5.5-GHz multi-mode power amplifier with reconfigurable output matching network
机译:
具有可重构输出匹配网络的5.5 GHz多模功率放大器
作者:
Huan-Sheng Chen
;
Yi-Keng Hsieh
;
Liang-Hung Lu
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MMIC power amplifiers;
circuit tuning;
switched capacitor networks;
CMOS process;
PAE enhancement;
frequency 5.5 GHz;
impedance coarse tuning;
impedance fine tuning;
load adaption;
multimode PA;
multimode power amplifier;
near-optimal impedances;
reconfigurable output matching network;
size 90 nm;
size-scaling MOS transistors;
stage-bypassing technique;
switched capacitor;
transformers;
transmit power back-off;
Electronic countermeasures;
Impedance;
Impedance matching;
Inductance;
Power amplifiers;
Power generation;
Switches;
efficiency enhancement;
multi-mode;
power amplifier;
reconfigurable matching network;
transformer;
67.
A 54.4-mW 4th-order quadrature bandpass CT ΣΔ modulator with 33-MHz BW and 10-bit ENOB for a GNSS receiver
机译:
用于GNSS接收器,具有33MHz带宽和10位ENOB的54.4mW 4次正交带通CTΣΔ调制器
作者:
Junfeng Zhang
;
Zehong Zhang
;
Yang Xu
;
Yichuang Sun
;
Baoyong Chi
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
RC circuits;
calibration;
comparators (circuits);
compensation;
feedback amplifiers;
radiofrequency integrated circuits;
radiofrequency power amplifiers;
satellite navigation;
sigma-delta modulation;
4th-order quadrature bandpass CT ΣΔ modulator;
CMOS technology;
ELD compensation;
ENOB;
GNSS receiver channel;
IRR;
active RC integrator;
bandwidth 33 MHz;
continuous-time sigma-delta modulator;
direct RZ feedback;
dual-frequency reception;
gain 59.3 dB;
gain 64 dB;
image rejection ratio;
low-power quantizer;
noise figure 62.1 dB;
power 54.4 mW;
power-efficient amplifier;
satellite system;
self-calibrated comparator;
size 180 nm;
voltage 1.8 V;
word length 10 bit;
word length 3 bit;
Bandwidth;
Clocks;
Feedforward neural networks;
Global Positioning System;
Modulation;
Preamplifiers;
Receivers;
RZ ELD compensation;
continuous-time;
power-efficient amplifier;
quadrature bandpass (complex bandpass);
sigma-delta modulator;
wide-band;
68.
A 54–84 GHz CMOS SPST switch with 35 dB isolation
机译:
具有35 dB隔离的54–84 GHz CMOS SPST开关
作者:
Ran Shu
;
Tang Adrian
;
Drouin Brian
;
Gu Qun Jane
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
integrated circuit layout;
millimetre wave integrated circuits;
optimisation;
switches;
CMOS millimeter-wave SPST switch design;
area-efficient layout;
coupled lump element;
distributed structure;
frequency 54 GHz to 84 GHz;
loss 35 dB;
optimization;
single-polar single-throw switch;
size 65 nm;
CMOS integrated circuits;
CMOS technology;
Couplings;
Insertion loss;
Switches;
Switching circuits;
Transistors;
65 nm CMOS;
SPST switch;
high isolation;
millimeter-wave;
69.
A wideband 60 GHz class-E/F
2
power amplifier in 40nm CMOS
机译:
40nm CMOS的宽带60 GHz E / F
2 inf>宽带功率放大器
作者:
Babaie Masoud
;
Staszewski Robert Bogdan
;
Galatro Luca
;
Spirito Marco
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
field effect MIMIC;
millimetre wave power amplifiers;
CMOS;
bandwidth 9.7 GHz;
coupling-factor transformer;
efficiency 20 percent;
frequency 60 GHz;
fully-integrated power amplifier;
gain 21.6 dB;
power-added efficiency;
second harmonic termination;
size 40 nm;
three-stage PA;
wideband class-E-Fsub2/sub switched-mode power amplifier;
CMOS integrated circuits;
Frequency modulation;
Impedance matching;
Oscillators;
Switches;
Switching circuits;
Transistors;
PA stability;
Power amplifier;
class-E/Finf2/inf;
mm-wave;
switched-mode;
transformer;
70.
A wideband envelope-tracking CMOS linear transmitter without digital predistortion
机译:
没有数字预失真的宽带包络跟踪CMOS线性发射机
作者:
Jung-Lin Woo
;
Sunghwan Park
;
Youngwoo Kwon
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
UHF integrated circuits;
UHF power amplifiers;
distortion;
phase shifters;
radio transmitters;
silicon-on-insulator;
AM-AM distortions;
AM-PM distortions;
CMOS ET PA;
CMOS envelope amplifier;
E-UTRA ACLR;
EA;
ET transmitter system;
RF power amplifier;
SOI CMOS process;
bandwidth 40 MHz;
dual shaping tables;
effective linearization technique;
efficiency 42.2 percent;
feedback loops;
frequency 0.837 GHz;
integrated phase compensation circuit;
iso-gain shaping table;
size 0.28 mum;
variable phase shifter;
wide bandwidth LTE signals;
wideband envelope-tracking CMOS linear transmitter;
CMOS integrated circuits;
Gain;
Phase shifters;
Radio frequency;
Transmitters;
Wideband;
AM-PM;
CMOS;
DPD;
LTE;
envelope tracking (ET);
linearity;
power amplifier (PA);
wideband;
71.
A wideband fractional-N synthesizer with low effort adaptive phase noise cancellation for low-power short-range standards
机译:
具有低功耗自适应相位噪声消除功能的宽带小数N分频合成器,用于低功率短程标准
作者:
Ye Zhang
;
Mueller Jan Henning
;
Mohr Bastian
;
Lei Liao
;
Atac Aytac
;
Wunderlich Ralf
;
Heinen Stefan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
UHF filters;
UHF integrated circuits;
frequency synthesizers;
interference suppression;
phase noise;
ΣΔ quantization noise;
CMOS technology;
bandwidth 1 MHz;
classical loop filter;
frequency 1.8 GHz;
low effort adaptive phase noise cancellation;
low-power short-range standards;
out-band phase noise;
power 8.3 mW;
size 130 nm;
wideband fractional-N synthesizer;
worst inband fractional spur;
Calibration;
Modulation;
Phase locked loops;
Phase noise;
Quantization (signal);
Synthesizers;
Voltage-controlled oscillators;
72.
A wideband under-sampling blocker detector with a 0.7–2.7 GHz mixer-first receiver
机译:
具有0.7–2.7 GHz混频优先接收器的宽带欠采样阻塞检测器
作者:
Viitala Olli
;
Kaltiokallio Mikko
;
Kosunen Marko
;
Stadius Kari
;
Ryynanen Jussi
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
UHF mixers;
analogue-digital conversion;
fast Fourier transforms;
gain control;
low-power electronics;
radio receivers;
ADC maximum SNDR;
FFT;
RF input node;
blocker carrier frequency;
blocker detection sensitivity;
blocker frequency;
blocker power level;
folded spectra;
frequency 0.7 GHz to 2.7 GHz;
input buffer gain control;
low-power wideband blocker detector;
measured sampled input signal spectra;
narrowband blocker;
power 42 mW;
power 7 mW;
prime number;
reconstructed folded spectrum;
undersampling SAR ADC;
wideband detector power consumption;
wideband mixer-first receiver;
wideband undersampling blocker detector;
Detectors;
Frequency measurement;
Mixers;
Radio frequency;
Receivers;
Wideband;
analog-to-digital converter;
blocker detector;
mixer-first receiver;
under-sampling;
73.
A dual band (2G/5G) IEEE 802.11b/g/ac 80MHz bandwidth AMAM envelope feedback power amplifier with digital pre-distortion
机译:
具有数字预失真的双频(2G / 5G)IEEE 802.11b / g / n / ac 80MHz带宽AMAM包络反馈功率放大器
作者:
Sai-Wang Tam
;
Yuan Lu
;
Nick Morteza
;
Yi Zhao
;
Alden Wong
;
Winoto Renaldi
;
Li Lin
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
5G mobile communication;
CMOS integrated circuits;
UHF power amplifiers;
amplitude modulation;
feedback amplifiers;
microwave power amplifiers;
power consumption;
wideband amplifiers;
wireless LAN;
CMOS;
EVM;
bandwidth 40 MHz;
bandwidth 80 MHz;
digital predistortion;
dual band IEEE 802.11b/g/ac wideband AM-AM envelope feedback power amplifier;
power consumption;
size 40 nm;
Bandwidth;
CMOS integrated circuits;
Dual band;
Feedback loop;
Gain;
Power amplifiers;
Power generation;
AM-AM envelope feedback;
OFDM;
WLAN;
class AB;
digital pre-distortion;
power amplifiers;
74.
A dual-band E-band quadrature VCO with switched coupled transformers in 28nm HPM bulk CMOS
机译:
具有28nm HPM体CMOS开关耦合变压器的双频E波段正交VCO
作者:
Vigilante M.
;
Reynaert P.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MMIC oscillators;
field effect MIMIC;
inductors;
microwave integrated circuits;
millimetre wave oscillators;
transformers;
voltage-controlled oscillators;
HPM bulk CMOS technology;
QVCO;
dual-band E-band quadrature voltage-controlled oscillator;
frequency 71 GHz to 76 GHz;
frequency 85.6 GHz to 90.7 GHz;
frequency 9.8 GHz;
gate-to-drain transformer;
size 28 nm;
switched coupled inductor;
switched coupled transformer;
CMOS integrated circuits;
Inductors;
Phase noise;
Switches;
Tuning;
Voltage-controlled oscillators;
CMOS;
E-Band;
Quadrature voltage-controlled oscillator (VCO);
low phase noise;
millimeter-wave;
75.
A fully integrated 0.18um CMOS UWB SoC for wireless body area network applications
机译:
完全集成的0.18um CMOS UWB SoC,适用于无线人体局域网应用
作者:
Myung Cheol Park
;
Won Il Chang
;
Kyoung Hak Lee
;
Dong-Sun Kim
;
Tae-Ho Hwang
;
Yun Seong Eo
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
amplitude shift keying;
body area networks;
notch filters;
pulse generators;
radio transceivers;
radiofrequency filters;
system-on-chip;
ultra wideband communication;
wireless sensor networks;
CMOS transceiver SoC;
OOK receiver architecture;
WBAN;
digital impulse generator;
frequency 3 GHz to 5 GHz;
integrated CMOS UWB SoC;
receiver sensitivity;
size 0.18 mum;
transmitter sensitivity;
tunable RF notch filter;
wireless body area network applications;
Body area networks;
Notch filters;
Radio frequency;
Receivers;
Sensitivity;
Transceivers;
Wireless communication;
OOK receiver;
UWB transceiver SoC;
WBAN;
interferer rejection;
textile antenna;
76.
A fully-integrated reconfigurable transceiver for narrowband wireless communication in 180nm CMOS
机译:
完全集成的可重新配置收发器,用于180nm CMOS中的窄带无线通信
作者:
Zheng Song
;
Xiliang Liu
;
Xiaokun Zhao
;
Qiongbing Liu
;
Zongming Jin
;
Yun Yin
;
Yichuang Sun
;
Baoyong Chi
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
1/f noise;
CMOS integrated circuits;
UHF filters;
UHF integrated circuits;
UHF mixers;
UHF power amplifiers;
calibration;
frequency synthesizers;
radio transceivers;
1/f noise;
AFC;
CMOS technology;
DCOC;
DPA linearization;
DQPSK signal;
IRR;
PA;
PVT variation;
TRX;
bandwidth 180 kHz;
bandwidth 3.75 kHz;
digital polar transmitter;
efficiency 28.9 percent;
filter frequency tuning;
fractional-N frequency synthesizer;
frequency 750 MHz to 960 MHz;
frequency 891 MHz;
fully-integrated reconfigurable transceiver;
gain 1 dB;
gain 48 dB;
gain 60 dB;
image rejection ratio;
inverse class-D power amplifier;
low-IF receiver;
narrowband wireless communication;
noise figure 5.1 dB;
on-chip I-Q mismatch calibration;
passive current mode mixer;
size 180 nm;
Calibration;
Noise measurement;
Power amplifiers;
Power generation;
Receivers;
Transceivers;
Transmitters;
77.
Design of Lange Couplers with local ground references using SiGe BiCMOS technology for mm-Wave applications
机译:
使用毫米波应用的SiGe BiCMOS技术设计具有本地接地参考的兰格耦合器
作者:
Wane S.
;
Leyssenne L.
;
Tesson O.
;
Doussin O.
;
Bajon D.
;
Lesenechal D.
;
Dinh T.V.
;
van Heijden M.P.
;
Pijper Ralf
;
Magnee P.
;
Descamps P.
;
Erdem A.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
bipolar MIMIC;
coplanar waveguides;
equivalent circuits;
integrated circuit design;
millimetre wave couplers;
semiconductor materials;
BiCMOS technology;
CPS;
CPW topology;
DTI pattering;
Lange coupler design;
RF performances;
SiGe;
circuit topology;
custom variation-aware RLC library elements;
die back-side grounding strategy;
grounding strategy effect;
local ground references;
lumped elements;
mm-wave applications;
physics-based broadband equivalent circuit model extraction;
BiCMOS integrated circuits;
Broadband communication;
Couplers;
Diffusion tensor imaging;
Grounding;
Integrated circuit modeling;
Radio frequency;
Broadband equivalent circuit;
Lange Coupler;
Power Combining;
SiGe BiCMOS;
mm-Wave;
78.
Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS
机译:
在45nm SOI CMOS中在100/202 GHz时具有10.2 / 5.2 dBm峰值功率的倍频器
作者:
Gang Liu
;
Jayamon Jefy
;
Buckwalter James
;
Asbeck Peter
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
field effect MIMIC;
frequency multipliers;
millimetre wave frequency convertors;
silicon-on-insulator;
SOI CMOS technology;
bandwidth 88 GHz to 104 GHz;
cascaded stacked amplifier;
efficiency 3.3 percent;
efficiency 4.1 percent;
frequency 100 GHz to 212 GHz;
millimeter-wave applications;
push-push doubler core;
silicon frequency doublers;
single-element signal generation circuit;
size 45 nm;
Bandwidth;
CMOS integrated circuits;
Logic gates;
Power generation;
Power measurement;
Probes;
Transistors;
CMOS;
frequency doubler;
millimeter-wave;
79.
An IF 8-element 2-beam bit-stream band-pass beamformer
机译:
IF 8元素2光束比特流带通波束形成器
作者:
Jaehun Jeong
;
Collins Nicholas
;
Flynn Michael P.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
analogue-digital conversion;
array signal processing;
band-pass filters;
delta-sigma modulation;
ADC-digital codesign approach;
BSP;
CMOS technology;
CTBPDSM;
DBF IC;
IF 8-element 2-beam bit-stream bandpass beamformer;
IF digital beamforming;
bandpass ADC;
bandpass filtering;
bit-stream processing;
continuous-time band-pass ΔΣ modulator;
frequency 260 MHz;
gain 8.9 dB;
noise figure 63.3 dB;
power 124 mW;
size 65 nm;
word length 12 bit;
Array signal processing;
Arrays;
Band-pass filters;
Integrated circuits;
Power demand;
Prototypes;
Beam steering;
delta-sigma modulation;
narrowband;
80.
An impedance sensor for MEMS adaptive antenna matching
机译:
用于MEMS自适应天线匹配的阻抗传感器
作者:
Tavakol Armin
;
Staszewski Robert Bogdan
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
UHF antennas;
UHF detectors;
UHF integrated circuits;
UHF measurement;
calibration;
electric current measurement;
electric impedance measurement;
electric sensing devices;
integrated circuit design;
microsensors;
voltage measurement;
IC design;
MEMS-based tunable device;
calibration mechanism;
coupler;
current sensor;
frequency 1.7 GHz to 2.7 GHz;
frequency 50 kHz;
impedance sensor;
passive adaptive cellular antenna matching network;
reference circuitry;
voltage sensor;
word length 2 bit;
Couplings;
Detectors;
Impedance;
Impedance matching;
Tuning;
Wires;
Antenna tuner;
impedance matching;
matching network;
sensing element;
transmitter;
81.
Dual-vector phase rotator for Doherty beamformers
机译:
Doherty波束形成器的双矢量相位旋转器
作者:
Greene Kevin
;
Floyd Brian
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
MMIC amplifiers;
array signal processing;
microwave generation;
signal generators;
Doherty amplifier;
Doherty beamformer;
IBM BiCMOS technology;
SiGe;
dual-vector phase rotator;
frequency 28 GHz;
gain 10 dB to 12 dB;
quadrature output signal generation;
size 0.12 mum;
word length 4 bit;
Current measurement;
Gain;
Generators;
Hybrid power systems;
Phase shifters;
Topology;
Transistors;
Phase shifter;
beamformer;
millimeter-wave;
phase rotator;
phased arrays;
82.
Auto-calibrating threshold compensation technique for RF energy harvesters
机译:
射频能量采集器的自动校准阈值补偿技术
作者:
Gharehbaghi Kaveh
;
Zorlu Ozge
;
Kocer Fatih
;
Kulah Haluk
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
energy harvesting;
rectifiers;
RF energy harvesters;
UHF Dickson rectifiers;
autocalibrating threshold compensation technique;
incident power;
reverse leakage current reduction;
Generators;
Logic gates;
Radio frequency;
Rectifiers;
Threshold voltage;
Transistors;
Voltage measurement;
Dickson rectifier;
RF energy harvesting;
low power calibration;
threshold compensation technique;
83.
4-terminal Angelov model for SOI CMOS MESFETs
机译:
SOI CMOS MESFET的4端子Angelov模型
作者:
Wilk Seth J.
;
Lepkowski William
;
Habibimehr Payam
;
Thornton Trevor J.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MESFET integrated circuits;
UHF integrated circuits;
UHF power amplifiers;
integrated circuit modelling;
silicon-on-insulator;
4-terminal Angelov model;
RF power amplifier;
SOI CMOS MESFETs;
forward diode equation;
frequency 2.5 GHz;
gate current extraction method;
improved Angelov-Chalmers MESFET model;
load pull measurement;
reverse diode equation;
silicon metal-semiconductor-field-effect-transistor;
size 45 nm;
substrate bias effects;
Load modeling;
Logic gates;
MESFETs;
Mathematical model;
Radio frequency;
Semiconductor device modeling;
Substrates;
MESFETs;
silicon-on-insulator;
84.
RF performance of 28nm PolySiON and HKMG CMOS devices
机译:
28nm PolySiON和HKMG CMOS器件的射频性能
作者:
Chew Kok Wai Johnny
;
Agshikar Aniket
;
Wiatr Maciej
;
Jen Shuang Wong
;
Wai Heng Chow
;
Zhihong Liu
;
Ting Huang Lee
;
Jinglin Shi
;
Suh Fei Lim
;
Sundaram Kumaran
;
Chan Lye Hock Kelvin
;
Cheng Chye Huat Michael
;
Sassiat Nicolas
;
Yong Koo Yoo
;
Balijepalli Asha
;
Kumta Amit
;
Chi Dong Nguyen
;
Illgen Ralf
;
Mathew Arun
;
Schippel Christian
;
Romanescu Alexandru
;
Watts Josef
;
Harame David
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
MOSFET;
elemental semiconductors;
radiofrequency integrated circuits;
silicon;
varactors;
HKMG CMOS device;
PolySiON CMOS device;
RF-MS CMOS;
Si;
high-K metal gate technology;
size 28 nm;
transistor;
varactor tunning range;
Capacitance;
Logic gates;
MOS devices;
Q-factor;
Radio frequency;
Solids;
Transistors;
28nm;
CMOS High-K metal gate;
PolySiON;
RF;
85.
20-GHz PLL-based configurable frequency generator in 180nm SiGe-on-SOI BiCMOS
机译:
180nm SiGe-on-SOI BiCMOS中基于20 GHz PLL的可配置频率发生器
作者:
Cali Joseph D.
;
Grens Curtis M.
;
Turner Steven E.
;
Jansen Douglas S.
;
Kushner Lawrence J.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
MMIC oscillators;
UHF filters;
UHF integrated circuits;
UHF oscillators;
bipolar transistor switches;
elemental semiconductors;
frequency synthesizers;
heterojunction bipolar transistors;
integrated circuit noise;
microwave filters;
microwave switches;
passive filters;
phase locked loops;
phase noise;
programmable filters;
silicon;
voltage-controlled oscillators;
CFG;
PLL;
SiGe-Si;
SiGe-on-SOI BiCMOS technology;
VCO;
configurable frequency generator;
frequency 10 MHz to 20 GHz;
frequency synthesis;
high-frequency oscillation;
low parasitic switch;
low phase noise HBT;
programmable bandwidth on-chip loop filter;
programmable passive;
size 180 nm;
voltage-controlled oscillator;
Bandwidth;
CMOS integrated circuits;
Frequency synthesizers;
Phase locked loops;
Phase noise;
Tuning;
Voltage-controlled oscillators;
BiCMOS;
Phase-locked loops;
frequency synthesis;
phase noise;
86.
Design of all-passive higher-order CMOS N-path filters
机译:
全无源高阶CMOS N路径滤波器的设计
作者:
Reiskarimian Negar
;
Krishnaswamy Harish
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
LC circuits;
UHF filters;
UHF integrated circuits;
band-pass filters;
circuit tuning;
integrated circuit design;
passive filters;
IB compression point;
LC filter;
OOB rejection;
all-passive higher-order CMOS N-path filter;
bandwidth 9 MHz to 15 MHz;
frequency 600 MHz to 850 MHz;
gain 1 dB;
gain 30 dB to 50 dB;
in-band compression point;
loss 4.7 dB to 6.2 dB;
lumped quarter-wave transmission-line equivalent;
out-of-band rejection;
power 75 mW;
quarter-wave t-line equivalent;
series-LC-like N-path structure;
size 65 nm;
tunable nominally 6th-order high-Q N-path bandpass filter;
voltage 1.2 V;
Band-pass filters;
Bandwidth;
CMOS integrated circuits;
Frequency measurement;
Inductors;
Semiconductor device measurement;
Tuning;
Band-pass filters;
Tuned circuits;
87.
C-band bidirectional amplifier with switchable matching circuits
机译:
具有可切换匹配电路的C波段双向放大器
作者:
Doojung Kim
;
Byung-Wook Min
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
MMIC amplifiers;
inductors;
microwave switches;
time division multiplexing;
C-band bidirectional amplifier;
CMOS bidirectional amplifier;
CMOS switches;
amplification direction;
backward mode amplification characteristic;
bias current;
bias direction;
common gate amplifier;
directional input-output symmetric;
drain voltage;
fixed gate voltage;
forward mode amplification characteristic;
frequency 7.4 GHz;
gain 9.8 dB;
ground voltages;
matching inductors;
noise figure 7.7 dB;
power compression point;
probe loss;
source voltage;
switchable matching circuits;
time division duplexing systems;
CMOS integrated circuits;
Gain;
Logic gates;
Loss measurement;
Switches;
Switching circuits;
Transistors;
CMOS amplifier;
CMOS switch;
T/R switch;
bidirectional amplifier;
common gate amplifier;
88.
An 80-GHz low noise amplifier resilient to the TX-spillover in phase-modulated continuous-wave radars
机译:
一个80 GHz低噪声放大器,可抵抗相位调制连续波雷达中的TX溢出
作者:
Medra Alaa
;
Guermandi Davide
;
Vaesen Kristof
;
Shi Qixian
;
Wambacq Piet
;
Giannini Vito
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
CW radar;
low noise amplifiers;
phase modulation;
CMOS technology;
TX-spillover;
cancellation circuit;
frequency 80 GHz;
low noise amplifier;
phase-modulated continuous-wave radars;
CMOS integrated circuits;
CMOS technology;
Gain;
Low-noise amplifiers;
Noise measurement;
Radar;
Receivers;
79 GHz;
Continuous wave;
full duplex;
leakage cancellation;
low noise amplifiers;
spillover;
89.
Compact 160-GHz amplifier with 15-dB peak gain and 41-GHz 3-dB bandwidth
机译:
紧凑型160 GHz放大器,具有15 dB的峰值增益和41 GHz的3 dB带宽
作者:
Hara S.
;
Katayama K.
;
Takano K.
;
Watanabe I.
;
Sekine N.
;
Kasamatsu A.
;
Yoshida T.
;
Amakawa S.
;
Fujishima M.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
field effect MIMIC;
integrated circuit layout;
millimetre wave amplifiers;
wideband amplifiers;
8-stage amplifier;
CMOS technology;
bandwidth 41 GHz;
compact fishbone layout technique;
compact wideband amplifier;
frequency 160 GHz;
gain 15 dB;
gain 3 dB;
higher-order matching network;
power 117 mW;
size 40 nm;
voltage 0.9 V;
Bandwidth;
Broadband amplifiers;
CMOS integrated circuits;
CMOS technology;
Gain;
Layout;
Transmission line measurements;
CMOS process;
Frequency estimation;
Millimeter wave circuits;
amplifiers;
90.
Compact broadband amplifiers with up to 105 GHz bandwidth in SiGe BiCMOS
机译:
采用SiGe BiCMOS的带宽高达105 GHz的紧凑型宽带放大器
作者:
Ahmed Faisal
;
Furqan Muhammad
;
Aufinger Klaus
;
Stelzer Andreas
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
bipolar MIMIC;
bipolar transistor circuits;
differential amplifiers;
heterojunction bipolar transistors;
millimetre wave amplifiers;
wideband amplifiers;
BiCMOS HBT technology;
SiGe;
common-base input stage;
compact broadband amplifiers;
emitter followers;
fully differential broadband amplifier;
gain 12 dB;
gain 13 dB;
in-band gain ripple;
input return loss;
large signal measurements;
low group delay variation;
lumped circuit design topology;
output cascode stage;
single-ended differential broadband amplifier;
size 0.13 mum;
Bandwidth;
Broadband communication;
Circuit synthesis;
Delays;
Gain;
Impedance;
Silicon germanium;
Broadband amplifier;
SiGe BiCMOS;
bandwidth enhancement;
heterojunction bipolar transistor (HBT);
millimeter-wave circuits;
91.
Design methodology for controlled-Q resonators in OTA-based filters
机译:
基于OTA的滤波器中受控Q谐振器的设计方法
作者:
Ghamari Saeed
;
Tasselli Gabriele
;
Botteron Cyril
;
Farine Pierre-Andre
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
active filters;
integrated circuit design;
operational amplifiers;
radiofrequency amplifiers;
radiofrequency filters;
radiofrequency integrated circuits;
resonator filters;
OTA-based filter;
UMC CMOS technology;
active filter;
controlled-Q resonator;
finite output resistance;
frequency 8 MHz;
high quality factor resonator;
internal pole;
operational transconductance amplifier;
size 180 nm;
Active inductors;
Capacitors;
Chlorine;
Gyrators;
Q-factor;
Resistance;
Resonant frequency;
Gyrators;
active filters;
active inductors;
operational transconductance amplifier (OTA);
quality factor (Q);
resonator filters;
92.
Behavioral modeling for fast characterization and design optimization of Doherty power amplifiers
机译:
行为建模,用于快速表征和优化Doherty功率放大器
作者:
Nabil Abdellah
;
Fernez Frederic
;
Ngoya Edouard
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
Volterra series;
optimisation;
power amplifiers;
Doherty power amplifier;
RF front-end system;
Volterra series;
behavioral modeling approach;
circuit level simulation;
device under test;
high frequency memory effect;
low frequency memory effect;
optimization;
Circuit simulation;
Integrated circuit modeling;
Kernel;
Mathematical model;
Numerical models;
Power amplifiers;
Radio frequency;
Doherty RF amplifier;
behavioral model;
memory effects;
steady-state implementation;
93.
Design of ESD protection for large signal swing RF inputs operating to 24GHz in 0.18um SiGe BiCMOS process
机译:
在0.18um SiGe BiCMOS工艺中工作于24GHz的大信号摆幅RF输入的ESD保护设计
作者:
Parthasarathy Srivatsan
;
Carrillo-Ramirez Rodrigo
;
Salcedo Javier
;
Hajjar J.-J.
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
electrostatic devices;
electrostatic discharge;
integrated circuit design;
microwave integrated circuits;
BiCMOS Process;
ESD protection devices;
RF port protection;
SiGe;
frequency 6 GHz to 24 GHz;
ground referenced ESD network;
large signal swing RF input;
size 0.18 mum;
very high speed Analog/RF designs;
voltage -3.5 V;
voltage 3.5 V;
Capacitance;
Electrostatic discharges;
Junctions;
Radio frequency;
Stress;
Substrates;
Thyristors;
CDM;
ESD;
Low Capacitance;
RF;
94.
Digital pulse-width pulse-position modulator in 28 nm CMOS for carrier frequencies up to 1 GHz
机译:
采用28 nm CMOS的数字脉宽脉冲位置调制器,载波频率高达1 GHz
作者:
Digel Johannes
;
Grozing Markus
;
Schmidt Martin
;
Berroth Manfred
;
Haslach Christoph
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
CMOS logic circuits;
UHF power amplifiers;
logic gates;
low-power electronics;
modulators;
pulse position modulation;
pulse width modulation;
16-QAM;
CMOS selectors;
D-PWPM;
NAND gates;
Nyquist frequency;
RF bandpass mode DAC;
carrier frequency;
data transmission;
digital input clock signal;
digital pulse-width pulse-position modulator;
frequency 1 GHz;
frequency 983.04 MHz;
low-frequency modulation;
low-power CMOS technology;
phase interpolation;
power 53 mW;
pulse sequences;
sinusoidal double-sideband suppressed-carrier modulation;
size 28 nm;
switching-mode power amplifier;
symmetric CMOS NOR gates;
voltage 1 V;
word length 6 bit;
Clocks;
Layout;
Logic gates;
Modulation;
Power amplifiers;
Pulse measurements;
Switches;
95.
Digitally intensive transmitter employing RF pulse width modulation for IoT applications
机译:
用于物联网应用的采用RF脉冲宽度调制的数字密集型发射机
作者:
Hyejeong Song
;
Gharpurey Ranjit
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
Internet of Things;
UHF integrated circuits;
UHF power amplifiers;
pulse width modulation;
radio transmitters;
ACLR;
CMOS RF-PWM transmitter;
Internet of Things;
IoT applications;
LTE signal;
PLL-based PWM generators;
RF pulse width modulation;
RF-PWM signal;
adjacent channel leakage ratio;
bandwidth 1.4 MHz;
baseband signals;
class-D power amplifier;
digitally intensive transmitter;
efficiency 17.5 percent;
efficiency 38.8 percent;
efficiency 46.6 percent;
error vector magnitude;
frequency 2.66 GHz;
peak-to-average ratio;
Baseband;
Generators;
Pulse width modulation;
Radio frequency;
Radio transmitters;
CMOS power amplifier;
Class-D;
Internet of Things;
PLL;
Pulse-width modulation (PWM);
wireless;
96.
Dual-band integrated Wi-Fi PAs with load-line adjustment and phase compensated power detector
机译:
具有负载线调整和相位补偿功率检测器的双频集成Wi-Fi PA
作者:
Yuan-Hung Chung
;
Po-Yu Chang
;
Meng-Hsiung Hung
;
Ming-Yeh Hsu
;
Che-Hung Liao
;
Chun-Wei Lin
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
OFDM modulation;
wireless LAN;
dense environment;
dual band integrated Wi-Fi PAs;
load line adjustment;
per-packet TX power control;
phase compensated power detector;
Accuracy;
Calibration;
Detectors;
IEEE 802.11 Standard;
Power amplifiers;
Power control;
Power generation;
OFDM;
VHT80 MCS9 (Very-High throughput 80MHz Bandwidth, Modulation and Coding Scheme 9);
VSWR;
Wi-Fi;
load-line;
97.
Comprehensive ESD co-design with high-speed and high-frequency ICs in 28nm CMOS: Characterization, behavioral modeling, extraction and circuit evaluation
机译:
采用28nm CMOS的高速和高频IC进行全面的ESD协同设计:表征,行为建模,提取和电路评估
作者:
Fei Lu
;
Zongyu Dong
;
Li Wang
;
Rui Ma
;
Chen Zhang
;
Hui Zhao
;
Wang Albert
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS integrated circuits;
electrostatic discharge;
integrated circuit design;
integrated circuit modelling;
radiofrequency integrated circuits;
CMOS process;
ESD behavioral modeling;
ESD circuit evaluation;
ESD device optimization;
I/O circuits;
comprehensive electrostatic discharge protection circuit co-design;
high-frequency ICs;
high-speed ICs;
parasitic ESD parameter extraction;
size 28 nm;
CMOS integrated circuits;
Circuit simulation;
Electrostatic discharges;
Integrated circuit modeling;
Semiconductor device modeling;
Testing;
ESD;
behavioral modeling;
co-design;
98.
Highly linear envelope tracking power amplifier with simple correction circuit
机译:
具有简单校正电路的高度线性包络跟踪功率放大器
作者:
Kyunghoon Moon
;
Jooseung Kim
;
Sangsu Jin
;
Byungjoon Park
;
Yunsung Cho
;
Min Park
;
Bumman Kim
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
modulators;
power amplifiers;
256-QAM IEEE 802.11ah signal;
AM-AM distortion;
AM-PM distortion;
CMOS process;
ET PA;
I-O device;
SCC;
efficiency 24 percent;
envelope tracking power amplifier;
gain -30 dB;
noise figure 9.35 dB;
simple correction circuit;
size 40 nm;
supply modulator;
CMOS integrated circuits;
Gain;
Modulation;
Power generation;
Standards;
Trajectory;
Voltage control;
802.11ah;
Envelope tracking (ET);
broadband;
power amplifier (PA);
simple correction circuit (SCC);
99.
High-performance 81–86 GHz transceiver chipset for Point-to-Point communication in SiGe BiCMOS technology
机译:
SiGe BiCMOS技术中用于点对点通信的高性能81-86 GHz收发器芯片组
作者:
Ben Yishay Roee
;
Katz Oded
;
Sheinman Benny
;
Carmon Roi
;
Levinger Run
;
Mazor Nadav
;
Elad Danny
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
radio transceivers;
semiconductor materials;
E-band frequency;
IF-to-RF upconverting mixer;
PA;
PLL;
RF-to-IF mixer;
SiGe;
frequency 81 GHz to 86 GHz;
frequency multiplier;
frequency quadrupler;
fully-integrated chipset;
gain 73 dB;
high-performance transceiver chipset;
image-reject LNA;
image-reject driver;
image-reject low-noise amplifier;
noise figure;
noise figure 6 dB;
phase-locked loop;
point-to-point communication;
power 1.8 W;
power 600 mW;
power amplifier;
quadrature IF-to-baseband de-modulators;
quadrature baseband-to-IF modulator;
quadrupler;
receiver chip;
silicon-germanium BiCMOS technology;
size 0.13 mum;
superhetrodyne architecture;
transmitter chip;
tunable baseband filter;
variable RF attenuators;
variable gain IF amplifier;
Attenuators;
Gain;
Mixers;
Power amplifiers;
Radio frequency;
Receivers;
Silicon germanium;
E-band;
Point-to-Point;
SiGe;
Transceiver;
100.
InP HBT/GaN HEMT/Si CMOS heterogeneous integrated Q-band VCO-amplifier chain
机译:
InP HBT / GaN HEMT / Si CMOS异质集成Q波段VCO放大器链
作者:
Yi-Cheng Wu
;
Watanabe Monte
;
LaRocca Tim
会议名称:
《IEEE Radio Frequency Integrated Circuits Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
III-V semiconductors;
MOSFET;
UHF amplifiers;
UHF field effect transistors;
UHF integrated circuits;
UHF oscillators;
amplifiers;
elemental semiconductors;
field effect MIMIC;
gallium compounds;
heterojunction bipolar transistors;
high electron mobility transistors;
indium compounds;
millimetre wave amplifiers;
millimetre wave field effect transistors;
millimetre wave oscillators;
silicon;
voltage-controlled oscillators;
wide band gap semiconductors;
DAHI integration process;
HBT-HEMT-CMOS heterogeneous integrated Q-band VCO-amplifier chain;
InP-GaN-Si;
diverse accessible heterogeneous integration;
frequency 2 GHz;
frequency 35 GHz;
gain 15 dB;
size 65 nm;
CMOS integrated circuits;
Gallium nitride;
Heterojunction bipolar transistors;
III-V semiconductor materials;
Indium phosphide;
Tuning;
Voltage-controlled oscillators;
GaN amplifier;
Heterogeneous integration;
InP VCO;
frequency synthesizer;
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