CMOS analogue integrated circuits; MMIC oscillators; UHF integrated circuits; UHF oscillators; field effect MMIC; harmonic oscillators (circuits); low-power electronics; phase noise; silicon-on-insulator; voltage-controlled oscillators; 8-shaped tank coil; UTBB FD-SOI CMOS process; external magnetic fields; figure-of-merit; frequency 2.8 GHz to 5.8 GHz; harmonic VCO; oscillation frequency; phase noise; power consumption; size 28 nm; ultra-thin buried oxide and body fully-depleted SOI CMOS process; voltage 0.9 V; CMOS integrated circuits; Capacitance; Inductors; Phase noise; Tuning; Voltage-controlled oscillators; UTBB FD-SOI CMOS; VCO; class-B; low phase noise; one octave; reconfigurable core;
机译:基于28型UTBB FD-SOI CMOS工艺的8型电感器的2.8至5.8 GHz谐波VCO
机译:具有28nm UTBB FD-SOI CMOS的3 GHz双核处理器ARM Cortex TM -A9,具有超宽电压范围和能源效率优化
机译:采用28nm UTBB FD-SOI CMOS的两个毫米波VCO
机译:28 NM UTBB FD-SOI CMOS过程中的2.8至5.8 GHz谐波VCO
机译:在0.13微米CMOS工艺中设计2.4 GHz VCO的比较研究
机译:像素间距匹配的超声接收器用于在28nm UTBB FD-SOI中集成Delta-Sigma波束形成器的3D光声成像
机译:25 GHz和28 GHz宽调谐范围130 NM CMOS VCOS与铁电变容二极管