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A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process

机译:采用28 nm UTBB FD-SOI CMOS工艺的2.8至5.8 GHz谐波VCO

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A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.
机译:采用28nm UTBB FD-SOI CMOS工艺设计的2.8至5.8GHz VCO采用可重新配置的有源内核,以节省较低振荡频率下的功率,并在所有频率下的功耗与相位噪声之间进行权衡。 UTBB FD-SOI CMOS工艺有助于在低功耗下实现超过一个八度音阶的调谐范围,而使用8形槽型线圈产生的VCO对外部磁场高度不敏感。 VCO的工作电压为0.9V,品质因数为186-189 dBc / Hz,具体取决于振荡频率和振荡器内核的配置。 VCO的有效面积为380μm×700μm。

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