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A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

机译:像素间距匹配的超声接收器用于在28nm UTBB FD-SOI中集成Delta-Sigma波束形成器的3D光声成像

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摘要

This paper presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 µm by 250 µm. The proof-of-concept receiver was implemented in an STMicroelectronics’s 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables an efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator’s measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1-V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. The functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.
机译:本文提出了一种用于3D光声(PA)成像的像素间距匹配的读出芯片,该芯片具有集成在250 µm×250 µm像素区域内的专用信号调节和delta-sigma调制。概念验证接收器采用STMicroelectronics的28-nm完全耗尽绝缘体上硅技术实现,并与电容性微机械超声换能器(CMUT)的4×4子阵列接口。每个像素中的前端信号调理采用粗略/精细增益调整架构,可以满足应用中90dB动态范围的要求。所采用的delta-sigma波束成形架构消除了对占用面积的Nyquist ADC的需求,从而实现了有效的像素内A / D转换。每个像素的开关电容器ΔΣ调制器利用了以摆率为主且面积优化的基于反相器的放大器。它仅占像素的1/4,并且其面积可与提供相同SNR和带宽的最新设计相媲美。调制器在10MHz输入带宽下测得的峰值信噪比和失真比为59.9dB,从1V电源消耗的功率为6.65mW。与具有类似延迟分辨率和功率耗散的现有技术相比,整体子阵列波束成形方法将每个通道的面积提高了7.4倍,将单通道SNR改进了8 dB。使用倒装芯片键合的二维CMUT阵列,在PA成像实验中评估了设计芯片的功能。

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