BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; integrated circuit noise; phase noise; radio transceivers; voltage-controlled oscillators; E-band backhaul transceivers; IBM silicon-germanium BiCMOS8hp technology; K band G-boosted Colpitts VCO design; V-band backhaul transceivers; frequency 15.2 GHz to 19.2 GHz; frequency drift; power 51.4 mW; power consumption; robust low-phase noise K band VCO; size 0.13 mum; temperature 25 degC; temperature variation; Frequency measurement; Phase noise; Robustness; Temperature measurement; Transceivers; Tuning; Voltage-controlled oscillators; Colpitts; E-band; Kinfu/inf band; PMOS; SiGe; low phase noise; voltage controlled oscillator (VCO);
机译:使用Vackar VCO和宽锁定范围可调分频器的低相位噪声PLL,用于在65nm CMOS中生成V波段信号
机译:具有ISM频段滤波技术的低相位噪声,低功耗和宽调谐范围VCO
机译:具有ISM频段滤波技术的低相位噪声,低功耗和宽调谐范围VCO
机译:强大的低相位噪声K
机译:宽调谐范围低相位噪声毫米波LC-VCO的分析和设计。
机译:用于MICS收发器的低功耗低相位噪声振荡器
机译:ISM频段中具有过滤技术的低相位噪声,低功耗和宽调谐范围VCO