CMOS integrated circuits; OFDM modulation; pulse width modulation; quadrature amplitude modulation; radio transmitters; radiofrequency integrated circuits; 802.11g 64-QAM OFDM signal; CMOS process; OFDM; PAE; PAPR; RF-PWM; carrier switching; efficiency 16 percent; efficiency 34 percent; gain -25.5 dB; peak-to-average power ratio; power back-off region; power-added-efficiency; pulse-width-modulation; size 130 nm; switching loss reduction; wireless transmitter; CMOS integrated circuits; Harmonic analysis; Power generation; Radio frequency; Radio transmitters; Switches; Synchronization; CMOS power amplifier; RF-PWM; WLAN; carrier switching; class-D PA; switching PA; wireless transmitter;
机译:使用RF-PWM和130 nm CMOS载波切换的数字密集型发送器/ PA
机译:一个273.5-312-GHz信号源,具有2.3 dBm峰值输出功率的130nm SiGe BICMOS工艺
机译:13.5 DBM 200-255-GHz 4路功率放大器和130纳米BICMOS的频率源
机译:使用RF-PWM的25.6 dBm无线发射器,其中包含130nm CMOS的载波切换
机译:高效MM-Wave CMOS无线发射器的高级架构
机译:用于短距离无线应用的单芯片全集成直接调制CMOS RF发射机
机译:采用40nm CMOS的多标准宽带OFDM RF-PWM发射机
机译:18 GHz,10.9 dBm全集成功率放大器,130 nm CmOs中具有23.5%paE