Comprehensive ESD co-design with high-speed and high-frequency ICs in 28nm CMOS: Characterization, behavioral modeling, extraction and circuit evaluation

摘要

This paper reports a comprehensive electrostatic discharge (ESD) protection circuit co-design and analysis approach for high-frequency and high-speed ICs. Implemented in a 28nm CMOS, the ESD co-design flow includes ESD device optimization and characterization, ESD behavioral modeling, parasitic ESD parameter extraction and ESD circuit evaluation for up to 40Gbps I/O circuits. This practical ESD co-design technique can be applied to high-performance, high-frequency and high-speed ICs.