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New Breakthrough in Chinese Integrated Circuits - Successful Development of High-Speed CMOS (Complementary Metal Oxide Semiconductor) Circuits

机译:中国集成电路的新突破 - 高速CmOs(互补金属氧化物半导体)电路的成功开发

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In the field of high-speed logic circuits, the new bipolar type integrated circuits have held a prominent position for some time now. Unfortunately, a fatal flaw of the bipolar type circuit is that power dissipation is high and, consequently, they are greatly limited in application. Since CMOS circuits have the distinctive advantages of low power dissipation and good anti-interference properties they are looked upon with favor. The shortcoming of the CMOS circuit is that its speed is rather low. In the early 80's, integrated circuits entered the VLSI era and were successfully developed one after another using micro-processing technology as the core, thus improving the CMOS circuits so that they entered the ranks of the high-speed logic circuits. (Chinese translation).

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