A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS

机译：40nm至67GHz带宽23dB增益，5.8dB最大NF毫米波LNA（28nm CMOS）

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Wide-band receivers at mm-waves enable several Gbit/s communications with simple modulation. This work presents the design of an ultra wide-band LNA in 28nm CMOS. Common source stages are stacked in a current-sharing configuration and coupled through third-order L-C band-pass networks. In addition, the stages are stagger-tuned to maximize bandwidth and gain flatness. Realized prototypes show 23dB peak gain over 40-67GHz with 5.8dB maximum in-band noise figure and 25.3mW power consumption.

机译：毫米波的宽带接收器可通过简单的调制实现数Gbit / s的通信。这项工作介绍了28nm CMOS中超宽带LNA的设计。通用源极级以电流共享配置堆叠，并通过三阶L-C带通网络耦合。另外，这些级被交错调整以最大化带宽并获得平坦度。已实现的原型显示出在40-67GHz范围内具有23dB的峰值增益，最大带内噪声系数为5.8dB，功耗为25.3mW。

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《IEEE Radio Frequency Integrated Circuits Symposium》|2015年|327-330|共4页
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Hadipour Kambiz; Ghilioni Andrea; Mazzanti Andrea; Bassi Matteo; Svelto Francesco;
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CMOS analogue integrated circuits; LC circuits; field effect MIMIC; low noise amplifiers; ultra wideband technology; CMOS; bandwidth 40 GHz to 67 GHz; bandwidth maximization; current-sharing configuration; gain 23 dB; gain flatness; mm-wave LNA; noise figure 5.8 dB; power 25.3 mW; size 28 nm; stagger-tuned stages; third-order L-C band-pass networks; ultrawideband LNA; wideband receivers; Bandwidth; CMOS integrated circuits; Frequency response; Gain; Inductors; Noise measurement; Transistors; CMOS integrated circuits; Low-noise amplifiers; Low-power electronics; Millimeter wave integrated circuits; Wideband;

机译：CMOS模拟集成电路; LC电路;场效应MIMIC;低噪声放大器;超宽带技术; CMOS;带宽40 GHz至67 GHz;带宽最大化;电流共享配置;增益23 dB;增益平坦度;毫米波LNA;噪声图5.8 dB;功率25.3 mW;尺寸28 nm;交错调谐级;三阶LC带通网络;超宽带LNA;宽带接收器;带宽; CMOS集成电路;频率响应;增益;电感;噪声测量;晶体管; CMOS集成电路;低噪声放大器;低功率电子器件;毫米波集成电路;宽带;

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专利

1. A Dual-Wideband CMOS LNA Using Gain-Bandwidth Product Optimization Technique [J] . Chen Chun-Chieh, Wang Yen-Chun Circuits, systems, and signal processing . 2017,第2期

机译：利用增益带宽乘积优化技术的双宽带CMOS LNA
2. Wideband Common-Gate CMOS LNA Employing Dual Negative Feedback With Simultaneous Noise, Gain, and Bandwidth Optimization [J] . Kim J., Hoyos S., Silva-Martinez J. Microwave Theory and Techniques, IEEE Transactions on . 2010,第9期

机译：利用双负反馈同时实现噪声，增益和带宽优化的宽带共栅CMOS LNA
3. A 55–64-GHz Low-Power Small-Area LNA in 65-nm CMOS With 3.8-dB Average NF and ~12.8-dB Power Gain [J] . Yaghoobi Majid, Yavari Mohammad, Kashani Milad Haghi, IEEE microwave and wireless components letters . 2019,第2期

机译：具有65nm CMOS的55–64GHz低功耗小面积LNA，具有3.8dB的平均NF和〜12.8dB的功率增益
4. A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS [C] . Hadipour Kambiz, Ghilioni Andrea, Mazzanti Andrea, IEEE Radio Frequency Integrated Circuits Symposium . 2015

机译：40GHz至67GHz带宽23dB增益5.8dB在28nm CMOS中的最大NF mm-Wave LNA
5. A Broadband Millimeter Wave LNA in 65nm CMOS Technology with Minimized Gain and Noise Variations [D] . Dadnam, Fariborz 2013

机译：采用65nm CMOS技术的宽带毫米波LNA，具有最小的增益和噪声变化
6. An up to 36Gbps analog baseband equalizer and demodulator for mm-wave wireless communication in 28nm CMOS [O] . Mattia, O.E., Guermandi, D., Torfs, Guy, 2017

机译：高达36Gbps的模拟基带均衡器和解调器，用于28nm CmOs的毫米波无线通信

A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS

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