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A 79 GHz gm-boosted sub-harmonic mixer with high conversion gain in 65nm CMOS

机译:在65nm CMOS中具有高转换增益的79 GHz g m 增强型次谐波混频器

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In this paper, a 79 GHz g-boosted sub-harmonic mixer with high conversion gain is presented. As a g-boosting technique, a transformer based feedback network with an NMOS bleeding path is proposed to achieve high conversion gain. The differential LO-driven sub-harmonic mixer has a simple structure and operates at low LO power. The measurement results show a conversion gain of 1.6 dB at a LO power of -5 dBm, a noise figure of 13 dB, and a 2LO-to-RF isolation of 38 dB. The power consumption of the sub-harmonic mixer is 12 mW. The circuit was fabricated using 65-nm CMOS technology with a chip area of 0.69×0.45 mm.
机译:本文提出了一种具有高转换增益的79 GHz g增强型次谐波混频器。作为升压技术,提出了具有NMOS泄放路径的基于变压器的反馈网络,以实现高转换增益。差分LO驱动的次谐波混频器具有简单的结构,并以低LO功率工作。测量结果表明,LO功率为-5 dBm时转换增益为1.6 dB,噪声系数为13 dB,2LO至RF的隔离度为38 dB。次谐波混频器的功耗为12 mW。该电路使用65纳米CMOS技术制造,芯片面积为0.69×0.45毫米。

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